Results 101 to 110 of about 178 (144)
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Progression of Superjunction Power MOSFET Devices
IECON 2007 - 33rd Annual Conference of the IEEE Industrial Electronics Society, 2007p-n column superjunction (SJ) MOSFET power devices are highly recognized for their higher blocking capability and lower specific on-state resistance. However, in practice, the performance of SJ devices is handicapped with difficulties in formation of perfect charge-balanced p-n columns due to the limitation of current process technology, especially for
Yu Chen +3 more
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2014
The power semiconductor devices control the energy flow in virtually every electric and electronic system. Most common applications are: automotive, traction, consumer electronics, air conditioning, electric engines. The improvement in power devices results in improved power management circuits with increased efficiency. Reduced environmental pollution,
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The power semiconductor devices control the energy flow in virtually every electric and electronic system. Most common applications are: automotive, traction, consumer electronics, air conditioning, electric engines. The improvement in power devices results in improved power management circuits with increased efficiency. Reduced environmental pollution,
openaire +2 more sources
Recent developments in superjunction power devices
Journal of SemiconductorsAbstract Superjunction (SJ) is one of the most innovative concepts in the field of power semiconductor devices and is often referred to as a "milestone" in power MOS. Its balanced charge field modulation mechanism breaks through the strong dependency between the doping concentration in the drift region and the breakdown voltage V
Chao Ma +4 more
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Development of SiC Superjunction MOSFET: A Review
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS), 2023Yuhan Duan +3 more
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Power superjunction devices: an analytic model for breakdown voltage
Microelectronics Journal, 2001Ettore Napoli
exaly
Design and Simulation of 5–20-kV GaN Enhancement-Mode Vertical Superjunction HEMT
IEEE Transactions on Electron Devices, 2013Zhongda Li, T Paul Chow
exaly
Theory of Superjunction With NFD and FD Modes Based on Normalized Breakdown Voltage
IEEE Transactions on Electron Devices, 2015Ming Qiao, Wentong Zhang, Bo Zhang
exaly
Superjunction Power Devices, History, Development, and Future Prospects
IEEE Transactions on Electron Devices, 2017Florin Udrea, Gerald Deboy
exaly

