Results 101 to 110 of about 613 (170)

Analysis of Superjunction MOSFET (CoolMOS™) Concept Limitations-Part I: Theory. [PDF]

Materials (Basel)
Lisik Z, Podgórski J.
europepmc   +1 more source

150-200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers. [PDF]

Micromachines (Basel), 2020
Chien FT, Wang ZZ, Lin CL, Kang TK, Chen CW, Chiu HC.   +5 more
europepmc   +1 more source

Analysis of Superjunction MOSFET (CoolMOS^TM) Concept Limitations-Part II: Simulations. [PDF]

Materials (Basel)
Lisik Z, Podgórski J.
europepmc   +1 more source

Editor's Choice Articles in the Electronic Materials Section of <i>Materials</i> in 2025. [PDF]

Materials (Basel)
Roccaforte F.
europepmc   +1 more source

COph100: A comprehensive fundus image registration dataset from infants constituting the "RIDIRP" database. [PDF]

Sci Data
Hu Y, Gong M, Qiu Z, Liu J, Shen H, Yuan M, Zhang X, Li H, Lu H, Liu J.   +9 more
europepmc   +1 more source

Electro-Thermal Improvement in a β-Ga₂O₃ Cage-Integrated Slanted-Fin MOSFET. [PDF]

Micromachines (Basel)
Li J, Li Y, Peng K, Lu X, Ma X.
europepmc   +1 more source

Silicon-on-Insulator (SOI) Lateral Power-Reduced Surface Field FinFET with High-Power Figure of Merit of 239.3 MW/cm². [PDF]

Micromachines (Basel)
Song CW, Lee T, Kim D, Kyoung S, Woo S.
europepmc   +1 more source

Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances. [PDF]

Materials (Basel)
Pu T, Li X, Li L, Ao JP.
europepmc   +1 more source

Applicability Analysis of High-Voltage Transmission and Substation Equipment Based on Silicon Carbide Devices. [PDF]

Micromachines (Basel)
Zhang H, Nie M, Dong Q, Liu H, Jia P, Li Z, Fang Y.   +6 more
europepmc   +1 more source

A novel self-biased pMOS clamped deep trench CSTBT with enhanced tradeoff and short-circuit capability. [PDF]

Sci Rep
Guo J, Qian Z, Chen X, Xu H, Yang Y, Zhang DW.   +5 more
europepmc   +1 more source