Results 1 to 10 of about 124 (107)
A 3.3 kV SiC Semi-Superjunction MOSFET with Trench Sidewall Implantations [PDF]
MicromachinesSuperjunction (SJ) technology offers a promising solution to the challenges faced by silicon carbide (SiC) Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) operating at high voltages (>3 kV).
Arne Benjamin Renz +2 more
exaly +6 more sources
Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures [PDF]
Micromachines, 2021 This research proposes a novel 4H-SiC power device structure—different concentration floating superjunction MOSFET (DC-FSJ MOSFET). Through simulation via Synopsys Technology Computer Aided Design (TCAD) software, compared with the structural and static ...
Chia-Yuan Chen +4 more
doaj +2 more sources
IET Power Electronics, 2022 A simple and accurate analytical model for the estimation of switching losses on power MOSFETs is proposed. It consists of simplifying the non‐linear behaviour of Miller capacitance as a function of voltage.
Edemar O. Prado +3 more
doaj +2 more sources
A Fast Recovery Vertical Superjunction MOSFET with n-Si and p-3C-SiC Pillars
Crystals, 2022 In the traditional SJ MOSFET structure, n/p pillars with the same doping concentrations in the drift region are introduced to decrease the on-resistance.
Hongyu Yu, Wenmao Li, Chenkai Deng
exaly +3 more sources
Temperature-Dependent Reverse-Recovery Behavior Analysis and Circuit-Level Mitigation of Superjunction MOSFETs [PDF]
MicromachinesThis study explores the temperature dependence of reverse-recovery behavior in superjunction metal-oxide-semiconductor field-effect-transistors (MOSFETs) using experiments and Technology Computer-Aided Design (TCAD) simulations. Results show that at 145 °
Wenrong Cui +6 more
doaj +2 more sources
Machine Learning-Based Figure of Merit Model of SIPOS Modulated Drift Region for U-MOSFET [PDF]
MicromachinesThis paper presents a machine learning-based figure of merit model for superjunction (SJ) U-MOSFET (SSJ-UMOS) with a modulated drift region utilizing semi-insulating poly-crystalline silicon (SIPOS) pillars.
Zhen Cao +4 more
doaj +2 more sources
Bipolar to unipolar conversion in superjunction MOSFETs during resonant switching
Power Electronic Devices and ComponentsSuperjunction MOSFETs have been one of the promising switching components for realizing resonant converters. In spite of the numerous studies about the resonant converters in power electronics, the detailed current flow in the device has been still ...
H. Kang, F. Udrea
doaj +2 more sources
Analysis of Superjunction MOSFET (CoolMOS<sup>TM</sup>) Concept Limitations-Part II: Simulations. [PDF]
Materials (Basel)The CoolMOSTM (Infineon Technologies AG, Munich, Germany) has been regarded as a device that alleviates high-voltage limitations of unipolar power devices. However, although the theoretical considerations seem to confirm this possibility, this expectation has not been fulfilled to date.
Lisik Z, Podgórski J.
europepmc +3 more sources
IEEE Open Journal of Power Electronics, 2021 In this paper, performance at 1st and 3rd quadrant operation of Silicon and Silicon Carbide (SiC) symmetrical and asymmetrical double-trench, superjunction and planar power MOSFETs is analysed through a wide range of experimental measurements using ...
Juefei Yang +5 more
doaj +1 more source
Energies, 2022 This work presents a comparative analysis among four power MOSFET technologies: conventional Silicon (Si), Superjunction (SJ), Silicon Carbide (SiC) and Gallium Nitride (GaN), indicating the voltage, current and frequency ranges of the best performance ...
Edemar O. Prado +3 more
doaj +1 more source