Results 11 to 20 of about 257 (137)
Modeling the switching behaviour of SuperJunction MOSFETs in cascode configuration with a low voltage silicon MOSFET [PDF]
2016 IEEE 17th Workshop on Control and Modeling for Power Electronics (COMPEL), 2016 This work presents a piecewise model to predict electrical waveforms of SuperJunction Cascode Configurations (SJ-CCs) during hard-switching operation. This ultra-fast high-voltage switch is composed of a SuperJunction MOSFET (SJ-FET) in Cascode Configuration (CC) with a Low-Voltage silicon MOSFET (LV-FET).
Rodríguez Méndez, Juan +4 more
openaire +5 more sources
Design and Process Analysis of a Split-Gate Trench Power MOSFET With Bottom-Trench High-
IEEE AccessIn this paper, we propose a simulation-based novel Split-Gate Trench MOSFET structure with an optimized fabrication process to enhance power efficiency, switching speed, and thermal stability for high-performance semiconductor applications.
Yunteng Jiang +8 more
doaj +2 more sources
A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile
IEEE Journal of the Electron Devices Society, 2021 In this article, we investigate a 4H-SiC super- junction (SJ) MOSFET structure with a charge-imbalance doping-profile. According to our numerical simulations and comparisons with the conventional SiC VDMOS (C-VDMOS) and SiC SJ VDMOS (SJ-VDMOS) devices ...
Hao Huang +6 more
doaj +1 more source
The Effect of the Pillar Ripple on the Reverse Recovery in Superjunction Mosfets
SSRN Electronic Journal, 2022 Fast dI/dt and oscillations often are the causes of failure during the reverse-recovery of superjunction MOSFETs. These issues become more prominent with shrinking the pitch size of the superjunction in an attempt to improve the overall performance from one generation to the next.
H. Kang, N. Donato, F. Udrea
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International Journal of Energy Research, Volume 2023, Issue 1, 2023., 2023 Matrix converters (MCs) are AC‐AC power conversion topologies widely explored and applied in the industry for their attractive features of sinusoidal input and output currents, considerable size reduction, and reliable operation due to the omission of bulky passive components.
Mohammad Ali +3 more
wiley +1 more source
IEEE Open Journal of Power Electronics, 2023 We compare the switching losses of four equivalent silicon and wide-bandgap 650 V power transistors operated in a hard-switched half-bridge configuration, switching 400 V at 40 A.
Daniel J. Rogers +5 more
doaj +1 more source
Theory of Superjunction Devices [PDF]
, 2020 Since the first ideal specific resistance model by Fujihira in 1997 and the first commercial superjunction MOSFET by Infineon technology in 1998, the technology and the understanding of superjunction devices have been gradually progressed.
core +2 more sources
A Novel MOS-Channel Diode Embedded in a SiC Superjunction MOSFET for Enhanced Switching Performance and Superior Short Circuit Ruggedness [PDF]
, 2021 In this study, a novel MOS-channel diode embedded in a SiC superjunction MOSFET (MCD SJ-MOSFET) is proposed and analyzed by means of numerical TCAD simulations.
Kwangsoo Kim, Jongwoon Yoon
core +1 more source
Fast and simple model generation for superjunction power MOSFETs [PDF]
e & i Elektrotechnik und Informationstechnik, 2020 AbstractThis paper describes a new way to create a behavioral model for power MOSFETs with highly nonlinear parasitic capacitances like those based on superjunction (SJ) principles. The process ranges from a simple measurement to the final model for SPICE simulations.
Michael Fuchs +3 more
openaire +2 more sources
Integrating a Soft Body Diode in the Super-Junction MOSFET by Using an n−/n+-Buffer Layer
Micromachines, 2022 In this paper, a novel silicon super-junction (SJ) MOSFET embedded with a soft reverse recovery body diode is proposed and studied by numerical simulation.
Zhi Lin +4 more
doaj +1 more source