Results 41 to 50 of about 257 (137)

Effect of Mesa Sidewall Angle on 4H‐Silicon Carbide Trench Filling Epitaxy Using Trichlorosilane and Hydrogen Chloride

Advanced Materials Interfaces, Volume 11, Issue 33, November 25, 2024.
Trench‐filling epitaxy using chlorinated deposition gas is a promising approach to manufacture superjunction power devices using silicon carbide (4H‐SiC). This article demonstrates the importance of trench profile features, such as sidewall angle and width, on the filling behaviors by chlorinated chemical vapor deposition and how the gas composition ...
Kelly Turner, Gerard Colston, Katarzyna Stokeley, Andrew Newton, Arne Renz, Marina Antoniou, Peter Gammon, Philip Mawby, Vishal Shah   +8 more
wiley   +1 more source

Recent research progress of SiC superjunction devices

机车电传动, 2023
Because of its excellent physical and chemical properties, silicon carbide (SiC) is suitable for manufacturing semiconductor devices working under high temperature and high power.
ZHANG Jinping, ZHANG Kun, CHEN Wei, WANG Jie, ZHANG Bo   +4 more
doaj  

Effect of SiO2 Surface Passivation on the Performance of GaN Polarization Superjunction Heterojunction Field Effect Transistors

physica status solidi (a), Volume 221, Issue 4, February 2024.
In this article, the effects of the SiO2 surface passivation layer are firstly reported on the normally‐on 1.2 kV GaN polarization superjunction heterojunction field effect transistors. The static on‐state and off‐state performances of devices are improved after passivation through optimizing the sheet density of 2D electron gas and 2D hole gas.
Yangming Du, Sankara Narayanan Ekkanath Madathil, Hiroji Kawai, Shuichi Yagi, Hironobu Narui   +4 more
wiley   +1 more source

A Novel Deep-Trench Super-Junction SiC MOSFET with Improved Specific On-Resistance

Micromachines
In this paper, a novel 4H-SiC deep-trench super-junction MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a split-gate is proposed and theoretically verified by Sentaurus TCAD simulations.
Rongyao Ma, Ruoyu Wang, Hao Fang, Ping Li, Longjie Zhao, Hao Wu, Zhiyong Huang, Jingyu Tao, Shengdong Hu   +8 more
doaj   +1 more source

Investigation of Performance of Double-Trench SiC Power MOSFETs in Forward and Reverse Quadrant Operation [PDF]

, 2021
In this paper, dynamic switching performance at 1st quadrant and 3rd quadrant operation of Silicon and Silicon Carbide (SiC) trench, double-trench, superjunction and planar power MOSFETs is analysed through a wide range of experimental measurements.
Mellor, Phil, Ortiz-Gonzalez, Jose, Yang, Juefei, Jahdi, Saeed, Stark, Bernard, Alatise, Olayiwola   +5 more
core   +3 more sources

SuperJunction IGBTS: An evolutionary step of silicon power devices with high impact potential [PDF]

, 2012
15 years ago the vertical SuperJunction (SJ) concept conceived for SJ power MOSFETs was the last, major breakthrough in the field of silicon power devices.
Antoniou, M, Nistor, I, Udrea, F, Bauer, F, ,, Mihaila, A   +5 more
core  

Multi-Split SOI Super-Junction VDMOS: A TCAD Simulation Study of the Single-Event Effect

IEEE Access
This work presents a radiation-hardened Superjunction Vertical Double-Diffused MOSFET (SJ-VDMOS) architecture designed to improve robustness against destructive single-event effects (SEEs), specifically Single-Event Gate Rupture (SEGR) and Single-Event ...
Sanjeev Manoj Ranjan, Saikat Majumder, Alok Naugarhiya, Ashutosh Mishra, Amjad Gawanmeh   +4 more
doaj   +1 more source

C_OSS Losses in Resonant Converters

Energies
High efficiency and high power density are key targets in modern power conversion. Operating power converters at high switching frequencies enables the use of smaller passive components, which, in turn, facilitate achieving high power density.
Giuseppe Samperi, Antonio Laudani, Nunzio Salerno, Alfio Scuto, Marco Ventimiglia, Santi Agatino Rizzo   +5 more
doaj   +1 more source

Comparative study of power MOSFET device structures [PDF]

, 2005
980-988In this paper, a comprehensive comparative study of various power MOSFET device structures designed and developed during the past decade has been presented. Various design issues related with power MOSFET have been studied to look into their on-
Padha, Naresh, Vaid, Rakesh
core  

An improved junction termination design using deep trenches for superjunction power devices [PDF]

, 2015
International audienceAmong the numerous solutions developed to improve the handling capability of superjunction power devices, the Deep Trench Termination (DT 2) is the most adapted thanks to its lower cost and size compared to other technologies using ...
Noblecourt, Sylvain, Frederic Morancho, Patrick Austin, Morancho, Frédéric, Austin, Patrick, Karine Isoird, Sylvain Noblecourt, Josiane Tasselli, Isoird, Karine, Tasselli, Josiane   +9 more
core   +1 more source