Results 61 to 70 of about 257 (137)

An analysis of the switching performance and robustness of power MOSFETs body diodes : a technology evaluation [PDF]

, 2015
The tradeoff between the switching energy and electro-thermal robustness is explored for 1.2-kV SiC MOSFET, silicon power MOSFET, and 900-V CoolMOS body diodes at different temperatures.
Alexakis, Petros, Mawby, P. A. (Philip A.), Ortiz Gonzalez, Jose Angel, Jahdi, Saeed, Ran, Li, Mawby, Philip, Gonzalez, Jose A Ortiz, Fisher, Craig A., Alatise, Olayiwola M., Bonyadi, Roozbeh, Alatise, Olayiwola   +10 more
core   +1 more source

The DT-SJMOSFET : a new power MOSFET strucure for high-voltage applications [PDF]

, 2007
International audienceNew hybrid vehicles will probably use high voltage batteries (150 to 200 Volts). For these future automotive applications, the development of 600 Volts power MOSFET switches exhibiting low on-resistance is desired.
Morancho, Frédéric, Mahfoz-Kotb, Hicham, Théolier, Loïc, Isoird, Karine, Tranduc, Henri   +4 more
core  

Analysis of the Operation Mechanism of Superjunction in RC-IGBT and a Novel Snapback-Free Partial Schottky Collector Superjunction RC-IGBT. [PDF]

Micromachines (Basel), 2023
Yuan S, Li Y, Hou M, Jiang X, Gong X, Hao Y.   +5 more
europepmc   +1 more source

A Novel Concept of Electron-Hole Enhancement for Superjunction Reverse-Conducting Insulated Gate Bipolar Transistor with Electron-Blocking Layer. [PDF]

Micromachines (Basel), 2023
Wang Z, Yang C, Huang X.
europepmc   +1 more source

A TCAD Study on High-Voltage Superjunction LDMOS with Variable-K Dielectric Trench. [PDF]

Micromachines (Basel), 2022
Cao Z, Sun Q, Zhang H, Wang Q, Ma C, Jiao L.   +5 more
europepmc   +1 more source

� Load switching [PDF]

, 2012
Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
Using Nextpower Technology, General Description, Quick Reference Data, Product Profile   +3 more
core   +2 more sources

An Innovative High Voltage Vertical Super-Junction MOSFET by Sidewall Implantation [PDF]

, 2012
[[abstract]]New device concepts (superjunction) for vertical power MOSFETs have been introduced in which the conventional drift region was replaced by alternating p- and n-type regions.
Agarwal, Neelam
core  

Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices. [PDF]

Micromachines (Basel), 2023
Rafin SMSH, Ahmed R, Haque MA, Hossain MK, Haque MA, Mohammed OA.   +5 more
europepmc   +1 more source

Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications. [PDF]

Materials (Basel), 2023
Maimon O, Li Q.
europepmc   +1 more source

Novel Step Floating Islands VDMOS with Low Specific on-Resistance by TCAD Simulation. [PDF]

Micromachines (Basel), 2022
Zhao D, Wang Y, Chen Y, Shao J, Fu Z, Duan B, Liu F, Li X, Li T, Yang X, Li M, Yang Y.   +11 more
europepmc   +1 more source