Lateral superjunction power MOSFETs [PDF]
, 2001 grantor: University of TorontoPower semiconductor devices play a crucial role in the efficient control of power used in electronic systems. There is a great need for the reduction of the power losses during switching and on-state conduction of ...
Amberetu, Mathew Atekwana
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Spice modelling of the superjunction IGBT [PDF]
, 2008 This paper presents a SPICE model of the SuperJunction Insulated Gate Bipolar Transistor (SJIGBT) [1]. SPICE simulation results are in good agreement with the DESSIS simulation results under DC conditions. This model consists of an intrinsic MOSFET and a
Antoniou, M, Udrea, F, Bauer, F, ,
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SuperJunction insulated gate bipolar transistor [PDF]
, 2009 The main achievement of this work is that we show that by intelligently coupling the ideas and designs from various power semiconductor devices, that do not combine under conventional approaches, we can lower the turn-off losses by a factor of 5 (or more)
Antoniou, M A
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A new generation of power MOSFET based on the concept of “Floating Islands” [PDF]
, 2000 In this paper, a new concept called "Floating Islands diode" (FLI-diode) is proposed: the voltage handling capability of this new diode is assumed by the association of several PN junctions in series.
A. Peyre-Lavigne +4 more
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A Critical Analysis and Comparison of the Effect of Source Inductance on 3- and 4-Lead SuperJunction MOSFETs Turn-Off [PDF]
This paper critically compares the turn-off performance of two package solutions, 3-lead (3L) vs. 4-lead (4L), in SuperJunction MOSFETs. It is commonly assumed that the better performance (lower switching losses) of the 4L MOSFET is obtained thanks to ...
Nunzio Salerno +4 more
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Switching performance comparison of a power switch in a Cascode Configuration using a SuperJunction MOSFET [PDF]
, 2016 51st International Universities' Power Engineering Conference, 6-9 September 2016, Coimbra (Portugal)This paper is focused on the analysis of the cascode connection of Superjunction MOSFETs (SJ-FET) working as a high voltage normally-off power switch ...
Rodríguez Méndez, Juan +9 more
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GaN-on-Si Power Technology: Devices and Applications [PDF]
, 2017 In this paper, we present a comprehensive reviewand discussion of the state-of-the-art device technology and application development of GaN-on-Si power electronics. Several device technologies for realizing normally off operation that is highly desirable
Haberlen, Oliver +13 more
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2023 Best Video at the 49th International Symposium for Testing and Failure Analysis held November 12-16, 2023 in Phoenix, AZ [PDF]
, 2023 Power MOSFETs are electronic devices that are commonly used as switches or amplifiers in power electronics applications such as motor control, audio amplifiers, power supplies and illumination systems.
Domenico Mello +3 more
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Utilising power devices below 100 K to achieve ultra-low power losses [PDF]
One of the main trend in the development of high power electric machines (motors, generators) is to replace the magnetic components with superconducting wires, this inevitably leads to a critical requirement from the industry (Converteam) to operate ...
Leong, Kennith Kin
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Dynamic C
, 2020 As the dimensions of the power metal-semiconductor field-effect transistor (MOSFET) are scaling down, and the output capacitance is considerably reduced, the fast dV/dt becomes an issue and can trigger severe oscillations during hard switching.
Kang, H, Udrea, F, ,
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