Results 71 to 80 of about 257 (137)

1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit [PDF]

, 2012
1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
Nextpower Technology
core  

Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C-- 30 V [PDF]

, 2011
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, qualified
Nextpower Technology, Quick Reference Data, Product Profile   +2 more
core  

New Power MOSFET with Beyond-1D-Limit R_SP-BV Trade-Off and Superior Reverse Recovery Characteristics. [PDF]

Materials (Basel), 2020
Zhang M, Li B, Wei J.
europepmc   +1 more source

Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit [PDF]

, 2012
Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
Using Nextpower Technology, General Description, Quick Reference Data   +2 more
core  

150-200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers. [PDF]

Micromachines (Basel), 2020
Chien FT, Wang ZZ, Lin CL, Kang TK, Chen CW, Chiu HC.   +5 more
europepmc   +1 more source

Analysis of Superjunction MOSFET (CoolMOS™) Concept Limitations-Part I: Theory. [PDF]

Materials (Basel)
Lisik Z, Podgórski J.
europepmc   +1 more source

Editor's Choice Articles in the Electronic Materials Section of <i>Materials</i> in 2025. [PDF]

Materials (Basel)
Roccaforte F.
europepmc   +1 more source

Electro-Thermal Improvement in a β-Ga₂O₃ Cage-Integrated Slanted-Fin MOSFET. [PDF]

Micromachines (Basel)
Li J, Li Y, Peng K, Lu X, Ma X.
europepmc   +1 more source

Simulation Study on 6.5 kV SiC Trench Gate p-Channel Superjunction Insulated Gate Bipolar Transistor. [PDF]

Micromachines (Basel)
Kang KM, Hu JW, Huang CF.
europepmc   +1 more source

Silicon-on-Insulator (SOI) Lateral Power-Reduced Surface Field FinFET with High-Power Figure of Merit of 239.3 MW/cm². [PDF]

Micromachines (Basel)
Song CW, Lee T, Kim D, Kyoung S, Woo S.
europepmc   +1 more source