Results 91 to 100 of about 257 (137)
Progressive Development of Superjunction Power MOSFET Devices [PDF]
IEEE Transactions on Electron Devices, 2008 The originally proposed superjunction (SJ) power MOSFET structure with interdigitated p-n columns is highly recognized for its higher voltage-blocking capability and lower specific on -state resistance. However, in practice, the performance of SJ devices is greatly handicapped due to difficulties in the formation of perfect charge-balanced p-n columns ...
Chen, Y. +5 more
openaire +2 more sources
Reverse Recovery Optimization of Multiepi Superjunction MOSFET Based on Tunable Doping Profile [PDF]
Electronics (Switzerland), 2023 This paper proposes and simulates research on the reverse recovery characteristics of two novel superjunction (SJ) MOSFETs by adjusting the doping profile.
Chunjian Tan, Huaiyu Ye, Guoqi Zhang
exaly +4 more sources
Some of the next articles are maybe not open access.
Related searches:
Related searches:
Superjunction SiC TCOX-MOSFET: Study and Comparison
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), 2022Junji Cheng, Bo Yi, Hongqiang Yang
exaly +2 more sources
Investigation on the Self-Sustained Oscillation of Superjunction MOSFET Intrinsic Diode [PDF]
IEEE Transactions on Electron Devices, 2019 This paper presents the analyses on the self-sustained oscillation of superjunction MOSFET intrinsic diode. At first, the characteristics of the self-sustained oscillation for the superjunction MOSFET intrinsic diode are identified by the double-pulse ...
Peng Xue +2 more
exaly +2 more sources
Material Limit of Power Devices—Applied to Asymmetric 2-D Superjunction MOSFET [PDF]
IEEE Transactions on Electron Devices, 2018 In spite of the reporting of several mathematical approaches dealing with the behavior of the superjunction MOSFET's specific resistance, a study for the asymmetrical pillar (when the width of the n-pillar and the p-pillar are not the same at a given ...
Florin Udrea, Hyemin Kang
exaly +1 more source
Superjunction IGBT Filling the Gap Between SJ MOSFET and Ultrafast IGBT [PDF]
IEEE Electron Device Letters, 2012 In this letter, we report E off-versus-V ce tradeoff curves for vertical superjunction insulated-gate bipolar transistors (SJ IGBTs), exhibiting unusual inverse slopes dE off/dV ce > 0 in a transition region between purely unipolar and strongly bipolar ...
Florin Udrea +2 more
exaly +1 more source
Current density and Gate Ringing in Superjunction MOSFETs
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020It is common knowledge that the gate ringing of a power MOSFET is proportional to the dV/dt during the dynamic switching. In this study we show a particular situation when the gate ringing can be reduced significantly with a faster dV/dt. The faster dV/dt occurs when the driving current in the superjunction MOSFET increases, leading to faster charging ...
H. Kang, F. Udrea
openaire +1 more source
Progression of Superjunction Power MOSFET Devices
IECON 2007 - 33rd Annual Conference of the IEEE Industrial Electronics Society, 2007p-n column superjunction (SJ) MOSFET power devices are highly recognized for their higher blocking capability and lower specific on-state resistance. However, in practice, the performance of SJ devices is handicapped with difficulties in formation of perfect charge-balanced p-n columns due to the limitation of current process technology, especially for
Yu Chen +3 more
openaire +1 more source
A Review of Superjunction Vertical Diffused MOSFET
IETE Technical Review, 2012Superjunction has arguably been the most creative and important concept in power device field. Superjunction vertical diffused MOSFET (SJ VDMOS) has been commercialized and the research effort to l...
Jian Chen +4 more
openaire +1 more source
COSS hysteresis in advanced superjunction MOSFETs
2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 2016In this work, a Sawyer-Tower circuit is employed to characterize the output capacitance (COSS) of advanced superjunction MOSFETs. It is shown that some of the most advanced superjunction MOSFETs exhibit significant hysteresis in their output capacitance which leads to unrecoverable power loss.
J.B. Fedison, M.J. Harrison
openaire +1 more source