Results 111 to 120 of about 257 (137)
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True Origin of Gate Ringing in Superjunction MOSFETs: Device View
IEEE Transactions on Power Electronics, 2021As superjunction devices are scaled down to smaller dimensions, the gate ringing becomes more prominent in dynamic switching. The exact origin of superjunction MOSFET 's gate ringing has not been so far identified as the conventional three-terminal measurement method cannot capture the dynamic behavior of the device, in particular the redistribution ...
Hyemin Kang, Florin Udrea
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Optimization of the Porous-Silicon-Based Superjunction Power MOSFET
IEEE Transactions on Electron Devices, 2008This paper discusses the optimization of a high-voltage superjunction (SJ) power MOSFET by the use of fabrication based on porous-silicon formation. In this fabrication process, the charge-compensating structures are created by etching the structured macropores directly on a thin silicon wafer, followed by passivating the walls and filling the pores ...
Hua Ye, Pradeep Haldar
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A Novel Low Loss Superjunction MOSFET with Hybrid Conduction Modes
2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)Wanjun Chen, Ruize Sun, Yun Xia
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Short-Circuit Safe Operating Area of Superjunction MOSFETs
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016Superjunction (SJ) Si-MOSFET power transistors have a larger active volume and thus a higher heat capacitance than wide-bandgap semiconductors with the same voltage and current rating. This could allow for higher power dissipation levels and thus increased short-circuit robustness.
Martin Pfost +5 more
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High Frequency Operation of SuperJunction MOSFET enhanced with Kelvin Source Pin
2020 AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE), 2020In this work a comparison between 3-pin and 4-pin superjunction (SJ) MOSFET is performed. Firstly, the advantages of the 4-pin packaging solution are pointed out by means of analytical expressions and simulations. Then, a standard 3-pin MOSFET has been experimentally compared with the Kelvin package configuration counterpart both integrated in an on ...
Cacciato M. +8 more
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Low noise superjunction MOSFET with integrated snubber structure
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2018Novel superjunction (SJ)-MOSFET structure with distributed internal snubber area is proposed. RC network composed by gate electrode, oxide and P-type pillar provides frequency-dependent capacitive coupling between each terminal. The snubber area acts as gate-drain capacitance (Cgd) only at high-frequency band.
Hiroaki Yamashita +6 more
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Thermal behavior of a superjunction MOSFET in a high-current conduction
IEEE Transactions on Electron Devices, 2006In this paper, a detailed study of the superjunction MOSFET (SJ-MOSFET) thermal behavior on high-current conduction is presented. First, the heat-generation (HG) process and its dependence on device geometry and biasing conditions are elucidated from numerical-simulation tools.
J. Roig, E. Stefanov, F. Morancho
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Development of SiC Superjunction MOSFET: A Review
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS), 2023Yuhan Duan +3 more
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4H-SiC superjunction trench MOSFET with reduced saturation current
Superlattices and Microstructures, 2019Abstract A novel 4H-SiC superjunction trench metal oxide semiconductor field effect transistor (SJ-TMOS) is proposed in this paper. The device features a grounded P+ buried layer below the P-body, an oxide trench beneath the gate, and a P-region surrounding the oxide trench.
Qingyuan He +7 more
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Influence of carrier lifetime control process in superjunction MOSFET characteristics
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2014This paper reports device characteristics of superjunction (SJ) MOSFETs employed with platinum (Pt) doping or electron irradiation processes for high speed recovery operation of the internal body diode. For the inverter application, high speed recovery operation of the internal body diode is necessary.
Wataru Saito +2 more
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