Results 101 to 110 of about 257 (137)

Slanted Oxide-Bypassed Superjunction Power MOSFETs

IECON 2006 - 32nd Annual Conference on IEEE Industrial Electronics, 2006
The superjunction power MOSFET devices, such as p-n column superjunction (named SJ) devices and oxide bypassed (OB) devices, are highly recognized for their higher blocking capability and lower on-state resistance. However, the performance of SJ devices is greatly handicapped due to difficulties in the formation of perfect charge-balanced SJ p-n ...
Yu Chen, Yung C. Liang, Ganesh S. Samudra   +2 more
openaire   +1 more source

Behavioral Model of the Superjunction Power MOSFET Devices

2020
In this paper, superjunction power metal–oxide–semiconductor field-effect transistor (MOSFET) model is presented. The proposed behavioral model is simple, accurate and uses a reduced number of parameters to describe accurately the static behavioral of the superjunction power MOSFET devices.
Abdelghafour Galadi, Yassine Hadini, Bekkay Hajji, Adil Echchelh   +3 more
openaire   +1 more source

Loss Analysis of Quasi Z-source Inverter with Superjunction-MOSFET

IEEJ Transactions on Industry Applications, 2018
AbstractA Z‐source inverter (ZSI) can work as an inverter with boost capability in one stage by using its impedance source and the short‐through mode as the switching mode. This paper discusses the circuit losses that depend on the boost ratio between the quasi ZSI, which is one of the ZSI topologies, using Superjunction‐MOSFETs and the conventional ...
Naoki Kamoshida, Ryuji Iijima, Takanori Isobe, Hiroshi Tadano   +3 more
openaire   +1 more source

Application of Novel Terminal Technologies for Superjunction Power MOSFETs

IETE Technical Review, 2017
In this technical review, several superjunction (SJ) power MOSFETs based on the novel terminal technologies have been discussed.
Zhen Cao, Baoxing Duan, Tongtong Shi, Song Yuan, Yintang Yang   +4 more
openaire   +1 more source

An Effective Charge Plasma based Semi-Superjunction MOSFET

2019 IEEE International Conference on System, Computation, Automation and Networking (ICSCAN), 2019
This paper presents a distinct design of a semi-superjunction (Semi-SJ) MOSFET that enhances the performance of the device with reduced fabrication complexity. Charge plasma concept is employed in a Semi-SJ MOSFET structure. Metals with appropriate work-function are used to form the source and drain contacts.
Ajeet Singh Lowanshi, Onika Parmar, Anshul Gupta, Alok Naugarhiya   +3 more
openaire   +2 more sources

A Novel Deep Junction Edge Termination for Superjunction MOSFETs

IEEE Electron Device Letters, 2018
In this letter, a novel edge termination named deep junction termination for silicon superjunction (SJ) MOSFETs is proposed, simulated, and experimentally demonstrated for the first time. By utilizing a typical implantation-and-epitaxy process to form P- and N-pillars for SJ, it is possible to form deep junctions as the device termination with a large ...
Chia-Hui Cheng, Chih-Fang Huang, Kung-Yen Lee, Feng Zhao   +3 more
openaire   +1 more source

Simulation Research of Tapered Sidewall Trench Superjunction MOSFETs

Applied Mechanics and Materials, 2014
This paper studied the relationship of breakdown voltage and charge imbalance of 600V tapered sidewall trench superjunction MOSFETs. Simulation structures including three types of structures: 600V vertical sidewall trench superjunction MOSFET (Type1) and 600V tapered sidewall trench superjunction MOSFET (Type2 and Type3).
Jun Liu, Li Li, Yue Yang Liu, Wen Yu Gao, Rui Jin, Kun Shan Yu   +5 more
openaire   +1 more source

Superior Short-Circuit Performance of SiC Superjunction MOSFET

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020
This study demonstrated the short-circuit performance of 1.2 kV-class silicon carbide (SiC) trench-gate superjunction MOSFET (SJ-UMOSFET) through experiments and numerical simulation. The SJ structure showed a substantially improved trade-off between specific on-resistance and short-circuit capability when compared with a conventional UMOSFET ...
Masakazu Okada, Shinya Kyogoku, Teruaki Kumazawa, Jun Saito, Tadao Morimoto, Manabu Takei, Shinsuke Harada   +6 more
openaire   +1 more source

Static and Dynamic Figures of Merits (FOM) for Superjunction MOSFETs

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019
The introduction of the superjunction has challenged the well-known limit of silicon. In spite of its widespread use, and despite its correct application in classical power MOSFETs, Baliga's figure of merit no longer can be used to give an accurate picture of the material potential in power electronics.
H. Kang, F. Udrea
openaire   +1 more source

Novel strained superjunction vertical single diffused MOSFET

AEU - International Journal of Electronics and Communications, 2020
Abstract In this article, a novel strained superjunction vertical single diffused MOSFET is proposed with enhanced current driving capability. In this design strain is induced by using SiGe layer in a superjunction vertical single diffused MOSFET (SJ-VSDMOS) and it improves the device performance.
Onika Parmar, Prateek Baghel, Alok Naugarhiya   +2 more
openaire   +1 more source