Results 81 to 90 of about 257 (137)

Applicability Analysis of High-Voltage Transmission and Substation Equipment Based on Silicon Carbide Devices. [PDF]

Micromachines (Basel)
Zhang H, Nie M, Dong Q, Liu H, Jia P, Li Z, Fang Y.   +6 more
europepmc   +1 more source

Gamma Ray on Superjunction MOSFET and Gate Ringing

IEEE Transactions on Electron Devices
Sangyun Song, Dong-Seok Kim, Hyemin Kang
openaire   +1 more source

Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances. [PDF]

Materials (Basel)
Pu T, Li X, Li L, Ao JP.
europepmc   +1 more source

Gallium oxide (Ga₂O₃) heterogeneous and heterojunction power devices. [PDF]

Fundam Res
Li B, Wang Y, Luo Z, Xu W, Gong H, You T, Ou X, Ye J, Hao Y, Han G.   +9 more
europepmc   +1 more source

The Overview of Silicon Carbide Technology: Status, Challenges, Key Drivers, and Product Roadmap. [PDF]

Materials (Basel)
Kamiński M, Król K, Kwietniewski N, Myśliwiec M, Sochacki M, Stonio B, Kisiel R, Martychowiec A, Racka-Szmidt K, Werbowy A, Żelazko J, Niedzielski P, Szmidt J, Strójwąs A.   +13 more
europepmc   +1 more source

A novel self-biased pMOS clamped deep trench CSTBT with enhanced tradeoff and short-circuit capability. [PDF]

Sci Rep
Guo J, Qian Z, Chen X, Xu H, Yang Y, Zhang DW.   +5 more
europepmc   +1 more source

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On the Charge Sheet Superjunction (CSSJ) MOSFET

IEEE Transactions on Electron Devices, 2008
This paper provides more insight into the operation of the charge sheet superjunction (CSSJ) proposed recently, whose specific on-resistance for a given breakdown voltage is even lower than that of a Superjunction (SJ). It is shown how the SJ and the CSSJ both evolve from a simple Gamma-shaped p+-n junction in which the heavily doped region surrounds ...
Shreepad Karmalkar
exaly   +2 more sources

Theory of 3-D Superjunction MOSFET [PDF]

IEEE Transactions on Electron Devices, 2019
The state-of-the-art superjunction (SJ) MOSFETs are based on the p-n pillar structures, arranged in a 2-D stripe geometry. This arrangement uses the superposition of the electric field components at the p-n junctions to create an enhanced depletion volume for higher breakdown capability.
H. Kang, F. Udrea
openaire   +2 more sources

A Superjunction U-MOSFET With SIPOS Pillar Breaking Superjunction Silicon Limit by TCAD Simulation Study

IEEE Electron Device Letters, 2017
A novel superjunction (SJ) vertical UMOSFET with semi-insulating POly-crystalline silicon pillar (SIPOS SJ-UMOS) is proposed and its mechanism is investigated by TCAD simulations. In the off-state, the reshape effect of SIPOS pillars enhances the vertical electric field strength and weakens the lateral field component, which increases the breakdown ...
Baoxing Duan, Song Yuan, Zhen Cao
exaly   +2 more sources