Results 31 to 40 of about 257 (137)

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Advanced Electronic Materials, Volume 4, Issue 1, January 2018., 2018
Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider than the 3.4 eV of GaN, represent an exciting and challenging new area of research in semiconductor materials, physics, devices and applications. This article surveys and presents an enumerated list of the materials, physics, device and associated application research ...
J. Y. Tsao, S. Chowdhury, M. A. Hollis, D. Jena, N. M. Johnson, K. A. Jones, R. J. Kaplar, S. Rajan, C. G. Van de Walle, E. Bellotti, C. L. Chua, R. Collazo, M. E. Coltrin, J. A. Cooper, K. R. Evans, S. Graham, T. A. Grotjohn, E. R. Heller, M. Higashiwaki, M. S. Islam, P. W. Juodawlkis, M. A. Khan, A. D. Koehler, J. H. Leach, U. K. Mishra, R. J. Nemanich, R. C. N. Pilawa‐Podgurski, J. B. Shealy, Z. Sitar, M. J. Tadjer, A. F. Witulski, M. Wraback, J. A. Simmons   +32 more
wiley   +1 more source

Moving towards high carrier mobility power devices in silicon and silicon carbide [PDF]

, 2016
This thesis reports on recent progress regarding the characterization, design and fabrication of modern power semiconductor devices in Silicon (Si) as well as in the promising wide band gap material Silicon Carbide (SiC).
Rossmann, Harald R.
core   +1 more source

Experimental Verification of a Battery Energy Storage System for Integration with Photovoltaic Generators

Advances in Power Electronics, Volume 2017, Issue 1, 2017., 2017
This paper presents the experimental verification of a 2 kW battery energy storage system (BESS). The BESS comprises a full‐bridge bidirectional isolated dc‐dc converter and a PWM converter that is intended for integration with a photovoltaic (PV) generator, resulting in leveling of the intermittent output power from the PV generator at the utility ...
Rajkiran Singh, Seyedfoad Taghizadeh, Nadia M. L. Tan, Saad Mekhilef, Antonio J. Marques Cardoso   +4 more
wiley   +1 more source

SuperJunction Cascode, a Configuration to Break the Silicon Switching Frequency Limit [PDF]

, 2016
This paper evaluates the SuperJunction MOSFET in cascode configuration with a low-voltage silicon MOSFET. The structure combines the good switching performance provided by the cascode configuration with advantages of the silicon technology as the ...
Rodriguez, Alberto, Roig, Jaume, Castro, Ignacio, Bauwens, Filip, Rodriguez, Juan, Lamar, Diego G.   +5 more
core   +4 more sources

On the Specific on-State Resistance of Superjunction MOSFETs With a Compensated Pillar [PDF]

IEEE Electron Device Letters, 2018
In this letter, we report an analytical model for the on-state characteristics of a superjunction (SJ) metal–oxide–semiconductor field effect transistor, featuring a compensated pillar between the n-pillar and the p-pillar. Since a large amount of lateral electric field is sustained in the compensated region, the doping concentration in the n-pillar ...
Kang, H, Udrea, F
openaire   +1 more source

Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices

Advanced Electronic Materials, Volume 11, Issue 1, January 2025.
The nickel oxide (NiO) is investigated as a p‐type material to pair with n‐type (ultra‐)wide‐bandgap semiconductors to construct multidimensional power devices. A tunable acceptor concentration is revealed in NiO with breakdown field up to 6.3 MV cm−1.
Yunwei Ma, Yuan Qin, Matthew Porter, Joseph Spencer, Zhonghao Du, Ming Xiao, Boyan Wang, Yifan Wang, Alan G. Jacobs, Han Wang, Marko Tadjer, Yuhao Zhang   +11 more
wiley   +1 more source

A new vertical power MOSFET with extremely reduced on resistance and high switching speed with multilayer structure [PDF]

, 2001
A vertical power MOSFET’s whose n-drift region is stacked by alternate pn structure named as MULTILAYER POWER MOSFET has been proposed for high voltage application with extremely low on-resistance.
Hakim, M.M.A., Alam, A.H.M. Zahirul
core  

SJ-FINFET: A New Low Voltage Lateral Superjunction MOSFET [PDF]

, 2008
This paper proposes a new SOI lateral superjunction (SJ) power transistor structure, SJ-FINFET, to address the requirement for low voltage lateral MOSFETs with low specific on-resistance (Ron,sp). The SJ-FINFET consists of a 3D trench gate and a SJ drift
Y. Onishi, W. T. Ng, Wu, R., H. Wang, H. P. E. Xu, J. K. O. Sin, Ng, W. T., R. Wu, Wang, H., Sin, J. K.O., Onishi, Y., Xu, H. P.E.   +11 more
core   +1 more source

Recent Advanced Ultra‐Wide Bandgap β‐Ga2O3 Material and Device Technologies

Advanced Electronic Materials, Volume 11, Issue 1, January 2025.
The advanced ultra‐wide bandgap semiconductor material β‐Ga2O3 is highly favored for its exceptional material properties. This sudy provides a comprehensive review of its developments in areas such as materials, power devices, and RF devices. The current status of its commercialization process is outlined, along with an analysis of the challenges it is
Sihan Sun, Chenlu Wang, Sami Alghamdi, Hong Zhou, Yue Hao, Jincheng Zhang   +5 more
wiley   +1 more source

An Overview and Comparative Analysis of Surface Mount and Pin‐Through‐Hole LV MOSFETs for Power Electronics Applications

IET Power Electronics, Volume 18, Issue 1, January/December 2025.
This work presents an overview of surface‐mounted devices (SMDs) and pin‐through‐hole (PTH) low‐voltage (tens of volts) MOSFETs for power electronics in industrial equipment. Efficiency and cost are analysed using Pareto front in a database of 200 MOSFETs, including PTH (TO220) and SMD (DPAK, D2PAK, TOLL, SuperSO8) packages.
Edemar O. Prado, Luan A. C. Mendonça, Tális Piovesan, Pedro C. Bolsi, Marcio Fontana, Antonio C. de C. Lima, Hamiltom C. Sartori, José R. Pinheiro   +7 more
wiley   +1 more source