IEEE Access, 2021 This paper presents the concept and results of a novel resonant DC-DC converter which achieves high voltage gain at a low number of utilized switches, low voltage stress on transistors, ZVS and ZCS operation, high efficiency and variable voltage gain ...
Szymon Folmer, Robert Stala
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Gate Ringing in Superjunction Mosfets with a Parasitic Capacitance in the Load Inductor
SSRN Electronic Journal, 2022 In this paper, the origin of the gate oscillations with a stray capacitance in the load inductor is analyzed with a device/circuit mix-mode simulation. It is found that the gate ringing occurs when the superjunction device reaches its pinch-off potential (the n-pillar and the p-pillar are fully depleted by the lateral depletion process).
Hyemin Kang, Florin Udrea
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Ultrafast switching superjunction MOSFETs for single phase PFC applications [PDF]
2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014, 2014 This paper presents a guide on characterizing state-of-the-art silicon superjunction (SJ) devices in the 600V range for single phase power factor correction (PFC) applications. The characterization procedure is based on a minimally inductive double pulse tester (DPT) with a very low intrusive current measurement method, which enables reaching the ...
Hernandez Botella, Juan Carlos +3 more
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Superjunction LDMOS With Dual Gate for Low On-Resistance and High Transconductance
IEEE Journal of the Electron Devices Society, 2020 In this paper, a novel bulk silicon lateral superjunction double diffused MOSFET (SJ-LDMOS) with dual gate (DG) is proposed and its mechanism is investigated by numerical TCAD simulations.
Zhen Cao, Licheng Jiao
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Evaluation of Superjunction MOSFETs in Cascode Configuration for Hard-Switching Operation [PDF]
IEEE Transactions on Power Electronics, 2018 Este trabajo cuenta con el apoyo del Gobierno de España (MINECO-13-DPI2013-47176-C2-2-R, MINECO-15-DPI2014-56358-JIN, FPU14 / 03268 y FC-15- GRUPIN14-143) y las subvenciones del Fondo Europeo de Desarrollo Regional (FEDER)
Juan Rodriguez +4 more
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Comparative analysis of the switching energy losses in GaN HEMT and silicon MOSFET power transistors [PDF]
Zbornik Radova: Elektrotehnički Institut "Nikola Tesla", 2020 The subject of this paper is the mutual comparison of switching energy losses in cascode gallium nitride HEMT and silicon "superjunction" MOSFET transistor, both designed for a maximum operating voltage of 650 V.
Mrvić Jovan, Vukić Vladimir Đ.
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Analysis of Intrinsic Switching Losses in Superjunction MOSFETs Under Zero Voltage Switching
Energies, 2020 Switching losses of power transistors usually are the most relevant energy losses in high-frequency power converters. Soft-switching techniques allow a reduction of these losses, but even under soft-switching conditions, these losses can be significant ...
Maria R. Rogina +5 more
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Superjunction MOSFET with dual built-in schottky diodes for fast reverse recovery: A numerical simulation study [PDF]
, 2019 A new superjunction MOSFET (SJ-MOSFET) architecture with dual built-in Schottky diodes is proposed and studied with the numerical TCAD simulations. This letter is based on silicon.
Jiang, Huaping +5 more
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Superjunction IGBT with Conductivity Modulation Actively Controlled by Two Separate Driving Signals [PDF]
, 2020 A dual-gate superjunction insulated gate bipolar transistor (IGBT) (DG-SJ-IGBT) is proposed and studied with numerical TCAD simulations. The new structure utilizes the superjunction structure as a controlling port for the strength of conductivity ...
Wei, Jin, Chen, Kevin J., Zhang, Meng
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True Material Limit of Power Devices—Applied to 2-D Superjunction MOSFET [PDF]
, 2018 Predictions on limits of silicon in power devices have failed spectacularly in the past, but in spite of that, the theory that generated them is still used today and adapted for wide bandgap materials to justify their superior standing against silicon ...
Kang, H, Udrea, F, ,
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