Results 81 to 90 of about 613 (170)

Evaluation of etching damage of unintentionally doped GaN by C–V characteristics for charge balance evaluation of polarization superjunction GaN FET

Applied Physics Express
The plasma etching of GaN induces an n-type surface conductive layer (SCL) that may disrupt the charge balance of the polarization superjunction structure formed by the polarization charge.
Eito Kokubo, Hirotaka Watanabe, Manato Deki, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano   +5 more
doaj   +1 more source

Low cost high voltage GaN polarization superjunction field effect transistors [PDF]

, 2017
A comprehensive overview of novel high voltage GaN field effect transistors (FETs) based on the Polarization Superjunction (PSJ) concept and a cost-effective approach towards manufacturing these high performance devices are presented.
M. Yamamoto, Unni, V., Narayanan, E.M.S., Kamiyama, M., Kawai, H., S. Hirata, Nakamura, F., H. Amano, T. Saito, Y. Kamiyama, E. M. S. Narayanan, Amano, H., H. Kawai, Hirata, S., Saito, T., F. Nakamura, Yamamoto, M., Yagi, S., S. Yagi, V. Unni   +19 more
core   +1 more source

Modeling the switching behaviour of SuperJunction MOSFETs in cascode configuration with a low voltage silicon MOSFET [PDF]

, 2016
This work presents a piecewise model to predict electrical waveforms of SuperJunction Cascode Configurations (SJ-CCs) during hard-switching operation.
Rodríguez Méndez, Juan, Filip Bauwens, Roig, Jaume, Bauwens, Filip, Juan Rodriguez, Alberto Rodriguez, Diego G. Lamar, Jaume Roig, Rodríguez Alonso, Alberto, González Lamar, Diego   +9 more
core   +1 more source

A Novel Deep-Trench Super-Junction SiC MOSFET with Improved Specific On-Resistance

Micromachines
In this paper, a novel 4H-SiC deep-trench super-junction MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a split-gate is proposed and theoretically verified by Sentaurus TCAD simulations.
Rongyao Ma, Ruoyu Wang, Hao Fang, Ping Li, Longjie Zhao, Hao Wu, Zhiyong Huang, Jingyu Tao, Shengdong Hu   +8 more
doaj   +1 more source

Superjunction IGBT Filling the Gap Between SJ MOSFET and Ultrafast IGBT [PDF]

, 2012
In this letter, we report E off-versus-V ce tradeoff curves for vertical superjunction insulated-gate bipolar transistors (SJ IGBTs), exhibiting unusual inverse slopes dE off/dV ce > 0 in a transition region between purely unipolar and strongly bipolar ...
Antoniou, M, Nistor, I, Udrea, F, Bauer, F, ,, Mihaila, A   +5 more
core  

Design of 200V n-type superjunction lateral insulated gate bipolar transistor on partial silicon on insulator [PDF]

, 2014
Lateral insulated-gate bipolar transistors (LIGBTs) have long been proposed for use in integrated Power Integrated Circuits (PICs). LIGBTs can be fabricated on either bulk silicon substrate or silicon-on-insulator (SOl).
Kho, Elizabeth Ching Tee
core  

Simulation Studies of a Trench MOS Device Structure with Small Figures of Merit

MATEC Web of Conferences, 2018
We proposed a vertical high permittivity trench power MOS (HKTMOS) device with alternating N&P drift region and high permittivity (HK) trench sandwiched in between.
Li Junhong
doaj   +1 more source

Characteristics of a SiC SBD with semi-superjunction structure

Acta Physica Sinica, 2010
A novel SiC semi-superjunction-Schottky Barrier Diode (Semi-SJ-SBD) structure is proposed, which is the combination of super-junction (SJ) structure and conventional drift region structure. The proposed structure can significantly reduce the specific on-resistance (Ron-sp) and improve the forward characteristics. The breakdown voltage (VB) and specific
null Yang Yin-Tang, null Geng Zhen-Hai, null Duan Bao-Xing, null Jia Hu-Jun, null Yu Cen, null Ren Li-Li   +5 more
openaire   +1 more source

SuperJunction IGBTS: An evolutionary step of silicon power devices with high impact potential [PDF]

, 2012
15 years ago the vertical SuperJunction (SJ) concept conceived for SJ power MOSFETs was the last, major breakthrough in the field of silicon power devices.
Antoniou, M, Nistor, I, Udrea, F, Bauer, F, ,, Mihaila, A   +5 more
core  

Determination of the effective critical breakdown field for Si, wide, and extreme bandgap semiconductor superjunction devices

AIP Advances
Designing high voltage superjunction (SJ) power devices with wide bandgap and extreme bandgap semiconductors, when compared to silicon, can enhance the trade-off between RON,sp and BV significantly, due to their >10× higher avalanche breakdown electric ...
Mohamed Torky, T. Paul Chow
doaj   +1 more source