Results 81 to 90 of about 178 (144)

A novel self-biased pMOS clamped deep trench CSTBT with enhanced tradeoff and short-circuit capability. [PDF]

Sci Rep
Guo J, Qian Z, Chen X, Xu H, Yang Y, Zhang DW.   +5 more
europepmc   +1 more source

A megawatt ultra-wide bandgap semiconductor module for pulsed power electronics. [PDF]

Nat Commun
Gong H, Yang X, Wang B, Zhang Z, Yuchi Q, Yang Z, Porter M, Cui H, Qin Y, Zhang R, Wang H, Dong D, Ye J, Lu GQ, Zhang Y.   +14 more
europepmc   +1 more source

Advances in High-Temperature Irradiation-Resistant Neutron Detectors. [PDF]

Sensors (Basel)
Wang C, Yu R, Xia W, Gong J.
europepmc   +1 more source

The Overview of Silicon Carbide Technology: Status, Challenges, Key Drivers, and Product Roadmap. [PDF]

Materials (Basel)
Kamiński M, Król K, Kwietniewski N, Myśliwiec M, Sochacki M, Stonio B, Kisiel R, Martychowiec A, Racka-Szmidt K, Werbowy A, Żelazko J, Niedzielski P, Szmidt J, Strójwąs A.   +13 more
europepmc   +1 more source

Stimulus-responsive smart bioactive glass composites for repair of complex tissue defects. [PDF]

Theranostics
Yang Y, Qiu Y, Lin C, Chen X, Zhao F.
europepmc   +1 more source

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Novel strained superjunction VDMOS

Superlattices and Microstructures, 2015
Abstract In this paper, we have proposed novel strained superjunction (s-SJ) vertical double diffused MOS (VDMOS). Through channel engineering, we have introduced strain effects in s-SJ device using thin separate p-type silicon–germanium (p-SiGe) layer over silicon p-pillar.
Alok Naugarhiya, Shashank Dubey, Pravin N Kondekar   +2 more
exaly   +2 more sources

A Superjunction U-MOSFET With SIPOS Pillar Breaking Superjunction Silicon Limit by TCAD Simulation Study

IEEE Electron Device Letters, 2017
A novel superjunction (SJ) vertical UMOSFET with semi-insulating POly-crystalline silicon pillar (SIPOS SJ-UMOS) is proposed and its mechanism is investigated by TCAD simulations. In the off-state, the reshape effect of SIPOS pillars enhances the vertical electric field strength and weakens the lateral field component, which increases the breakdown ...
Baoxing Duan, Song Yuan, Zhen Cao
exaly   +2 more sources

Novel Accumulation Mode Superjunction Device With Extended Superjunction Gate

IEEE Transactions on Electron Devices, 2022
Xing Chen, Lijuan Wu
exaly   +2 more sources

Charge Sheet Superjunction (CSSJ) - A new superjunction concept

2007 International Workshop on Physics of Semiconductor Devices, 2007
A new superjunction concept called Charge Sheet Superjunction (CSSJ) is proposed based on simulation studies; a fabrication procedure for practical realization of this concept is also suggested. The CSSJ structure is obtained by replacing the p-pillar of a conventional Superjunction (SJ) by a negative charge sheet.
S. Srikanth, S. Karmalkar
openaire   +1 more source