Results 81 to 90 of about 733 (170)

A unified model for vertical doped and polarized superjunction GaN devices

, 2020
A unified model is proposed to characterize the breakdown voltage (BV) and specific on-resistance (R on, sp) for vertical doped superjunction (d-SJ) and polarized superjunction (p-SJ) GaN power devices.
Junji Cheng, Weijia Zhang, Ng, Wai Tung, Bo Yi, Haimeng Huang, Yi, Bo, Zhang, Weijia, Wai Tung Ng, Huang, Haimeng, Cheng, Junji   +9 more
core   +1 more source

SuperJunction insulated gate bipolar transistor

, 2009
The main achievement of this work is that we show that by intelligently coupling the ideas and designs from various power semiconductor devices, that do not combine under conventional approaches, we can lower the turn-off losses by a factor of 5 (or more)
Antoniou, M A
core  

Determination of the effective critical breakdown field for Si, wide, and extreme bandgap semiconductor superjunction devices

AIP Advances
Designing high voltage superjunction (SJ) power devices with wide bandgap and extreme bandgap semiconductors, when compared to silicon, can enhance the trade-off between RON,sp and BV significantly, due to their >10× higher avalanche breakdown electric ...
Mohamed Torky, T. Paul Chow
doaj   +1 more source

Design, simulation and analysis of 4H-SiC superjunction structures

The superior material properties of Silicon Carbide (SiC) when compared to Silicon (Si), will be instrumental in the next generation of power devices. Notably, the critical electric field which is 10 times greater than Si allows for faster switching and ...
Baker, Guy
core  

Multi-Split SOI Super-Junction VDMOS: A TCAD Simulation Study of the Single-Event Effect

IEEE Access
This work presents a radiation-hardened Superjunction Vertical Double-Diffused MOSFET (SJ-VDMOS) architecture designed to improve robustness against destructive single-event effects (SEEs), specifically Single-Event Gate Rupture (SEGR) and Single-Event ...
Sanjeev Manoj Ranjan, Saikat Majumder, Alok Naugarhiya, Ashutosh Mishra, Amjad Gawanmeh   +4 more
doaj   +1 more source

Novel Step Floating Islands VDMOS with Low Specific on-Resistance by TCAD Simulation. [PDF]

Micromachines (Basel), 2022
Zhao D, Wang Y, Chen Y, Shao J, Fu Z, Duan B, Liu F, Li X, Li T, Yang X, Li M, Yang Y.   +11 more
europepmc   +1 more source

Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications. [PDF]

Materials (Basel), 2023
Maimon O, Li Q.
europepmc   +1 more source

Superjunction IGBT Filling the Gap Between SJ MOSFET and Ultrafast IGBT

, 2012
In this letter, we report E off-versus-V ce tradeoff curves for vertical superjunction insulated-gate bipolar transistors (SJ IGBTs), exhibiting unusual inverse slopes dE off/dV ce > 0 in a transition region between purely unipolar and strongly bipolar ...
Antoniou, M, Nistor, I, Udrea, F, Bauer, F, ,, Mihaila, A   +5 more
core  

Fabrication of lateral superjunction devices using selective epitaxy

, 2018
A lateral superjunction includes a substrate layer, a selective epitaxy layer deposited on the substrate layer, a trench formed into the selective epitaxy layer to expose a portion of the substrate layer, a first layer of semiconductor deposited in the ...
Harris, Harlan Rusty, Babb, Michael Everett   +1 more
core   +1 more source

Modular pulse synthesizer for transcranial magnetic stimulation with fully adjustable pulse shape and sequence. [PDF]

J Neural Eng, 2022
Li Z, Zhang J, Peterchev AV, Goetz SM.
europepmc   +1 more source