Results 61 to 70 of about 178 (144)

kV-class lateral NiOx/GaN superjunction diode via ammonia molecular beam epitaxy (NH3-MBE) [PDF]

APL Electronic Devices
This study reports the demonstration of lateral p-NiOx/p-GaN/n-GaN-based superjunction (SJ) diodes using p-GaN with additional sputtered p-type nickel oxide (NiOx) layers to realize charge-balanced structures. The SJ diode capacitance–voltage (C–V) model
Yizheng Liu, Zachary J. Biegler, Ashley E. Wissel-Garcia, James S. Speck, Sriram Krishnamoorthy   +4 more
doaj   +1 more source

Evaluation of etching damage of unintentionally doped GaN by C–V characteristics for charge balance evaluation of polarization superjunction GaN FET

Applied Physics Express
The plasma etching of GaN induces an n-type surface conductive layer (SCL) that may disrupt the charge balance of the polarization superjunction structure formed by the polarization charge.
Eito Kokubo, Hirotaka Watanabe, Manato Deki, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano   +5 more
doaj   +1 more source

A Novel Deep-Trench Super-Junction SiC MOSFET with Improved Specific On-Resistance

Micromachines
In this paper, a novel 4H-SiC deep-trench super-junction MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a split-gate is proposed and theoretically verified by Sentaurus TCAD simulations.
Rongyao Ma, Ruoyu Wang, Hao Fang, Ping Li, Longjie Zhao, Hao Wu, Zhiyong Huang, Jingyu Tao, Shengdong Hu   +8 more
doaj   +1 more source

Simulation Studies of a Trench MOS Device Structure with Small Figures of Merit

MATEC Web of Conferences, 2018
We proposed a vertical high permittivity trench power MOS (HKTMOS) device with alternating N&P drift region and high permittivity (HK) trench sandwiched in between.
Li Junhong
doaj   +1 more source

Determination of the effective critical breakdown field for Si, wide, and extreme bandgap semiconductor superjunction devices

AIP Advances
Designing high voltage superjunction (SJ) power devices with wide bandgap and extreme bandgap semiconductors, when compared to silicon, can enhance the trade-off between RON,sp and BV significantly, due to their >10× higher avalanche breakdown electric ...
Mohamed Torky, T. Paul Chow
doaj   +1 more source

Multi-Split SOI Super-Junction VDMOS: A TCAD Simulation Study of the Single-Event Effect

IEEE Access
This work presents a radiation-hardened Superjunction Vertical Double-Diffused MOSFET (SJ-VDMOS) architecture designed to improve robustness against destructive single-event effects (SEEs), specifically Single-Event Gate Rupture (SEGR) and Single-Event ...
Sanjeev Manoj Ranjan, Saikat Majumder, Alok Naugarhiya, Ashutosh Mishra, Amjad Gawanmeh   +4 more
doaj   +1 more source

Novel Step Floating Islands VDMOS with Low Specific on-Resistance by TCAD Simulation. [PDF]

Micromachines (Basel), 2022
Zhao D, Wang Y, Chen Y, Shao J, Fu Z, Duan B, Liu F, Li X, Li T, Yang X, Li M, Yang Y.   +11 more
europepmc   +1 more source

Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications. [PDF]

Materials (Basel), 2023
Maimon O, Li Q.
europepmc   +1 more source

Modular pulse synthesizer for transcranial magnetic stimulation with fully adjustable pulse shape and sequence. [PDF]

J Neural Eng, 2022
Li Z, Zhang J, Peterchev AV, Goetz SM.
europepmc   +1 more source

Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices. [PDF]

Micromachines (Basel), 2023
Rafin SMSH, Ahmed R, Haque MA, Hossain MK, Haque MA, Mohammed OA.   +5 more
europepmc   +1 more source