Results 61 to 70 of about 613 (170)
Vertical GaN Superjunction Diode on Sapphire with Kilovolt Dynamic Breakdown Voltage [PDF]
The development of superjunction structures for use in vertical wide bandgap power devices promise to break the 1-D material limits. Additionally, the possibility of utilizing heteroepitaxial GaN-on-Sapphire wafer for vertical devices can significantly ...
Qin, Yuan +6 more
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Analytical calculation of the breakdown voltage for balanced, symmetrical superjunction power devices [PDF]
, 2010 The superjunction concept allows the design of power semiconductor devices with improved performances compared to conventional sustaining layers. Due to the lack of accurate analytical models to characterize superjunction devices the design phase is ...
NAPOLI, ETTORE +3 more
core +2 more sources
IEEE Journal of the Electron Devices Society, 2022 This paper studies the short-circuit safe operating area (SCSOA) of the conventional field-stop (FS) IGBT and the superjunction (SJ) FS IGBT, based on 1200 V-rated samples, with the help of numerical electrothermal simulations.
Zhihao Wang +4 more
doaj +1 more source
Wide Bandgap Semiconductor Device With Vertical Superjunction Edge Termination for the Drift Region [PDF]
, 2018 A vertical superjunction edge termination structure for the drift region of wide bandgap semiconductor devices that provides a low resistance and high off voltage allowing the breakdown voltage of the superjunction drift region to be ...
Martino, Christopher Adrian
core
IGBTs: Concept, Development and New Structures
Kongzhi Yu Xinxi Jishu, 2017 The insulated gate bipolar transistor (IGBT) is arguably the most innovative power device today. It is the only device concept known today that incorporates in a single cell a MOSFET with a bipolar junction transistor, whereby both devices are active in ...
Florin Udrea
doaj
TechnologiesThis study proposes an AlGaN/GaN current aperture vertical electron transistor (CAVET) featuring a double superjunction (SJ) to enhance breakdown voltage (BV) and investigates its electrical characteristics via technology computer-aided design (TCAD ...
Jong-Uk Kim +3 more
doaj +1 more source
IEEE Access, 2019 The theoretical analysis of breakdown model for a deep trench superjunction (DT-SJ) SiC VDMOS is presented in this paper. The vertical electric field distribution is derived by the electric field decomposition.
Tao Liu +7 more
doaj +1 more source
Investigation on the Self-Sustained Oscillation of Superjunction MOSFET Intrinsic Diode [PDF]
, 2019 This paper presents the analyses on the self-sustained oscillation of superjunction MOSFET intrinsic diode. At first, the characteristics of the self-sustained oscillation for the superjunction MOSFET intrinsic diode are identified by the double-pulse ...
Riccio, Michele +4 more
core +1 more source
High Pillar Doping Concentration for SiC Superjunction IGBTs [PDF]
, 2018 This paper is a theoretical study of the optimum doping concentration for the n and p pillars of a superjunction IGBT. As the concentration of the pillar for a silicon-carbide superjunction device increases up to 10 times higher than that of silicon ...
Kang, H, Udrea, F, ,
core
Доклады Белорусского государственного университета информатики и радиоэлектроникиThis work presents the results of computer simulations of the operational characteristics of vertical channel Insulated Gate Bipolar Transistor (IGBT) device structures designed according to the following technologies: Trench-IGBT, Superjunction Trench ...
Trong Thanh Nguyen +3 more
doaj +1 more source