Results 61 to 70 of about 733 (170)
TechnologiesThis study proposes an AlGaN/GaN current aperture vertical electron transistor (CAVET) featuring a double superjunction (SJ) to enhance breakdown voltage (BV) and investigates its electrical characteristics via technology computer-aided design (TCAD ...
Jong-Uk Kim +3 more
doaj +1 more source
IEEE Access, 2019 The theoretical analysis of breakdown model for a deep trench superjunction (DT-SJ) SiC VDMOS is presented in this paper. The vertical electric field distribution is derived by the electric field decomposition.
Tao Liu +7 more
doaj +1 more source
The lateral superjunction PSOI LIGBT and LDMOSFET
, 2012 This paper presents a comparison between the superjunction LIGBT and the LDMOSFET in partial silicon-on-insulator (PSOI) technology in 0.18μm PSOI HV process.
Pilkington, SJ +6 more
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Доклады Белорусского государственного университета информатики и радиоэлектроникиThis work presents the results of computer simulations of the operational characteristics of vertical channel Insulated Gate Bipolar Transistor (IGBT) device structures designed according to the following technologies: Trench-IGBT, Superjunction Trench ...
Trong Thanh Nguyen +3 more
doaj +1 more source
Comparative analysis of the switching energy losses in GaN HEMT and silicon MOSFET power transistors [PDF]
Zbornik Radova: Elektrotehnički Institut "Nikola Tesla", 2020 The subject of this paper is the mutual comparison of switching energy losses in cascode gallium nitride HEMT and silicon "superjunction" MOSFET transistor, both designed for a maximum operating voltage of 650 V.
Mrvić Jovan, Vukić Vladimir Đ.
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Analytical models for electric field in superjunction power devices
, 2009 Two-dimensional analytical models for the calculation of the electric field distribution in superjunction power semiconductor devices are presented in this paper.
NAPOLI, ETTORE, E. Napoli
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Simulation Study of a Super-Junction Deep-Trench LDMOS With a Trapezoidal Trench
IEEE Journal of the Electron Devices Society, 2018 A super-junction (SJ) deep-trench (DT) lateral double-diffused metal-oxide-semiconductor transistor improved by tilting the DT sidewalls is proposed. The incline of sidewalls introduces some vertically varying charges into the SJ drift regions on both ...
Junji Cheng +4 more
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kV-class lateral NiOx/GaN superjunction diode via ammonia molecular beam epitaxy (NH3-MBE) [PDF]
APL Electronic DevicesThis study reports the demonstration of lateral p-NiOx/p-GaN/n-GaN-based superjunction (SJ) diodes using p-GaN with additional sputtered p-type nickel oxide (NiOx) layers to realize charge-balanced structures. The SJ diode capacitance–voltage (C–V) model
Yizheng Liu +4 more
doaj +1 more source
Design and Optimization of Superjunction Vertical DMOS Power Transistors using Sentaurus Device Simulation [PDF]
, 2016 Vertical double-diffused metal oxide semiconductor (VDMOS) power transistor has been studied. The use of superjunction (SJ) in the drift region of VDMOS has been evaluated using three-dimensional device simulation.
Mendoza Macias, Raul
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Performance limits of 4H-SiC and 2H-GaN vertical superjunction (SJ) devices
, 2018 December 2018School of EngineeringIn our performance limits projections of stripe-cell superjunction devices (STR-SJ), the specific on-resistances are 0.1 mΩ-cm2 and 1 mΩ-cm2 for 4H-SiC and 0.03 mΩ-cm2 and 0.3 mΩ-cm2 for 2H-GaN with blocking voltages of ...
Zhou, Xiang
core +1 more source