Results 31 to 40 of about 178 (144)
Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
Advanced Electronic Materials, Volume 4, Issue 1, January 2018., 2018 Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider than the 3.4 eV of GaN, represent an exciting and challenging new area of research in semiconductor materials, physics, devices and applications. This article surveys and presents an enumerated list of the materials, physics, device and associated application research ...
J. Y. Tsao +32 more
wiley +1 more source
On‐State Current Increasing Structure of Source‐Connected Polarization Superjunction Transistor
physica status solidi (a), Volume 222, Issue 23, December 2025.For the polarization superjunction (PSJ) field effect transistor, a structure with the PSJ structure on the source electrode side is fabricated by partially etching the PSJ structure to increase the drain current. As a result, the saturation drain current increases as the PSJ region decreases, and the VBD·ID,sat is improved by a factor of 2.17.
Eito Kokubo +6 more
wiley +1 more source
Advances in Power Electronics, Volume 2017, Issue 1, 2017., 2017 This paper presents the experimental verification of a 2 kW battery energy storage system (BESS). The BESS comprises a full‐bridge bidirectional isolated dc‐dc converter and a PWM converter that is intended for integration with a photovoltaic (PV) generator, resulting in leveling of the intermittent output power from the PV generator at the utility ...
Rajkiran Singh +4 more
wiley +1 more source
A Review of Vertical Ga2O3 Diodes: From Fabrication to Performance Optimization and Future Outlooks
physica status solidi (b), Volume 262, Issue 8, August 2025.Gallium oxide (Ga2O3) diodes are emerging as promising components in power electronics, offering an ultrawide bandgap, high breakdown electric field, and cost‐effective growth methods. This article reviews recent advancements in Ga2O3 diodes, highlighting their fabrication techniques, performance in high‐voltage applications, and ongoing research ...
Jose Manuel Taboada Vasquez, Xiaohang Li
wiley +1 more source
A Novel Super-Junction DT-MOS with Floating p Regions to Improve Short-Circuit Ruggedness
Micromachines, 2023 A novel super-junction (SJ) double-trench metal oxide semiconductor field effect transistor (DT-MOS) is proposed and studied using Synopsys Sentaurus TCAD in this article.
Sujie Yin +4 more
doaj +1 more source
Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices
Advanced Electronic Materials, Volume 11, Issue 1, January 2025.The nickel oxide (NiO) is investigated as a p‐type material to pair with n‐type (ultra‐)wide‐bandgap semiconductors to construct multidimensional power devices. A tunable acceptor concentration is revealed in NiO with breakdown field up to 6.3 MV cm−1.
Yunwei Ma +11 more
wiley +1 more source
Bipolar to unipolar conversion in superjunction MOSFETs during resonant switching
Power Electronic Devices and ComponentsSuperjunction MOSFETs have been one of the promising switching components for realizing resonant converters. In spite of the numerous studies about the resonant converters in power electronics, the detailed current flow in the device has been still ...
H. Kang, F. Udrea
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2020 This note clarifies an important approximation used to simulate the breakdown field in the SiO2 liner of a SiC Charge-Sheet Superjunction - a new power device structure - reported by Akshay and Karmalkar (2020).
K. Akshay, Shreepad Karmalkar
doaj +1 more source
Research on vertical GaN devices based on gradient Al components
Frontiers in Physics, 2023 A groove-gate power device with a linearly gradient Al composition P-type AlGaN superjunction (abbreviated as LG-SJCAVET) is proposed, which uses polarized P-type AlGaN material instead of the traditional P-type GaN buried layer, avoiding the technical ...
Yonghe Chen +3 more
doaj +1 more source
Recent Advanced Ultra‐Wide Bandgap β‐Ga2O3 Material and Device Technologies
Advanced Electronic Materials, Volume 11, Issue 1, January 2025.The advanced ultra‐wide bandgap semiconductor material β‐Ga2O3 is highly favored for its exceptional material properties. This sudy provides a comprehensive review of its developments in areas such as materials, power devices, and RF devices. The current status of its commercialization process is outlined, along with an analysis of the challenges it is
Sihan Sun +5 more
wiley +1 more source