Results 31 to 40 of about 613 (170)
Energies, 2022 This work presents a comparative analysis among four power MOSFET technologies: conventional Silicon (Si), Superjunction (SJ), Silicon Carbide (SiC) and Gallium Nitride (GaN), indicating the voltage, current and frequency ranges of the best performance ...
Edemar O. Prado +3 more
doaj +1 more source
A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile
IEEE Journal of the Electron Devices Society, 2021 In this article, we investigate a 4H-SiC super- junction (SJ) MOSFET structure with a charge-imbalance doping-profile. According to our numerical simulations and comparisons with the conventional SiC VDMOS (C-VDMOS) and SiC SJ VDMOS (SJ-VDMOS) devices ...
Hao Huang +6 more
doaj +1 more source
Design consideration of 1000V Merged PiN Schottky diode using Superjunction sustaining layer [PDF]
, 2001 The paper presents a novel rectifier structure based on superjunction technique, the Superjunction Merged PiN Schottky diode. Optimal diode design is obtained exploiting a two-dimensional analytical model, able to correctly estimate electric field, for ...
NAPOLI, ETTORE +3 more
core +1 more source
True Origin of Gate Ringing in Superjunction MOSFETs: Device View [PDF]
, 2021 As superjunction devices are scaled down to smaller dimensions, the gate ringing becomes more prominent in dynamic switching. The exact origin of superjunction MOSFET's gate ringing has not been so far identified as the conventional three-terminal ...
Kang, H, Udrea, F, ,
core
Analytical modeling of breakdown voltage of superjunction power devices [PDF]
, 2000 The paper presents an analytic bidimensional model for breakdown voltage of recently proposed superjunction structures. The bidimensional model is able to correctly estimate electric field and breakdown voltage giving an insight in optimal design of ...
NAPOLI, ETTORE +1 more
core +2 more sources
Machine Learning Algorithm for Efficient Design of Separated Buffer Super-Junction IGBT
Micromachines, 2023 An improved structure for an Insulated Gate Bipolar Transistor (IGBT) with a separated buffer layer is presented in order to improve the trade-off between the turn-off loss (Eoff) and on-state voltage (Von).
Ki Yeong Kim +4 more
doaj +1 more source
Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
Advanced Electronic Materials, Volume 4, Issue 1, January 2018., 2018 Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider than the 3.4 eV of GaN, represent an exciting and challenging new area of research in semiconductor materials, physics, devices and applications. This article surveys and presents an enumerated list of the materials, physics, device and associated application research ...
J. Y. Tsao +32 more
wiley +1 more source
Advances in Power Electronics, Volume 2017, Issue 1, 2017., 2017 This paper presents the experimental verification of a 2 kW battery energy storage system (BESS). The BESS comprises a full‐bridge bidirectional isolated dc‐dc converter and a PWM converter that is intended for integration with a photovoltaic (PV) generator, resulting in leveling of the intermittent output power from the PV generator at the utility ...
Rajkiran Singh +4 more
wiley +1 more source
A Novel Super-Junction DT-MOS with Floating p Regions to Improve Short-Circuit Ruggedness
Micromachines, 2023 A novel super-junction (SJ) double-trench metal oxide semiconductor field effect transistor (DT-MOS) is proposed and studied using Synopsys Sentaurus TCAD in this article.
Sujie Yin +4 more
doaj +1 more source
A Review of Vertical Ga2O3 Diodes: From Fabrication to Performance Optimization and Future Outlooks
physica status solidi (b), Volume 262, Issue 8, August 2025.Gallium oxide (Ga2O3) diodes are emerging as promising components in power electronics, offering an ultrawide bandgap, high breakdown electric field, and cost‐effective growth methods. This article reviews recent advancements in Ga2O3 diodes, highlighting their fabrication techniques, performance in high‐voltage applications, and ongoing research ...
Jose Manuel Taboada Vasquez, Xiaohang Li
wiley +1 more source