Results 31 to 40 of about 733 (170)
Energies, 2022 This work presents a comparative analysis among four power MOSFET technologies: conventional Silicon (Si), Superjunction (SJ), Silicon Carbide (SiC) and Gallium Nitride (GaN), indicating the voltage, current and frequency ranges of the best performance ...
Edemar O. Prado +3 more
doaj +1 more source
A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile
IEEE Journal of the Electron Devices Society, 2021 In this article, we investigate a 4H-SiC super- junction (SJ) MOSFET structure with a charge-imbalance doping-profile. According to our numerical simulations and comparisons with the conventional SiC VDMOS (C-VDMOS) and SiC SJ VDMOS (SJ-VDMOS) devices ...
Hao Huang +6 more
doaj +1 more source
Wide Bandgap Semiconductor Device With Vertical Superjunction Edge Termination for the Drift Region [PDF]
, 2018 A vertical superjunction edge termination structure for the drift region of wide bandgap semiconductor devices that provides a low resistance and high off voltage allowing the breakdown voltage of the superjunction drift region to be ...
Martino, Christopher Adrian
core +2 more sources
Machine Learning Algorithm for Efficient Design of Separated Buffer Super-Junction IGBT
Micromachines, 2023 An improved structure for an Insulated Gate Bipolar Transistor (IGBT) with a separated buffer layer is presented in order to improve the trade-off between the turn-off loss (Eoff) and on-state voltage (Von).
Ki Yeong Kim +4 more
doaj +1 more source
Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
Advanced Electronic Materials, Volume 4, Issue 1, January 2018., 2018 Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider than the 3.4 eV of GaN, represent an exciting and challenging new area of research in semiconductor materials, physics, devices and applications. This article surveys and presents an enumerated list of the materials, physics, device and associated application research ...
J. Y. Tsao +32 more
wiley +1 more source
On‐State Current Increasing Structure of Source‐Connected Polarization Superjunction Transistor
physica status solidi (a), Volume 222, Issue 23, December 2025.For the polarization superjunction (PSJ) field effect transistor, a structure with the PSJ structure on the source electrode side is fabricated by partially etching the PSJ structure to increase the drain current. As a result, the saturation drain current increases as the PSJ region decreases, and the VBD·ID,sat is improved by a factor of 2.17.
Eito Kokubo +6 more
wiley +1 more source
Advances in Power Electronics, Volume 2017, Issue 1, 2017., 2017 This paper presents the experimental verification of a 2 kW battery energy storage system (BESS). The BESS comprises a full‐bridge bidirectional isolated dc‐dc converter and a PWM converter that is intended for integration with a photovoltaic (PV) generator, resulting in leveling of the intermittent output power from the PV generator at the utility ...
Rajkiran Singh +4 more
wiley +1 more source
A Review of Vertical Ga2O3 Diodes: From Fabrication to Performance Optimization and Future Outlooks
physica status solidi (b), Volume 262, Issue 8, August 2025.Gallium oxide (Ga2O3) diodes are emerging as promising components in power electronics, offering an ultrawide bandgap, high breakdown electric field, and cost‐effective growth methods. This article reviews recent advancements in Ga2O3 diodes, highlighting their fabrication techniques, performance in high‐voltage applications, and ongoing research ...
Jose Manuel Taboada Vasquez, Xiaohang Li
wiley +1 more source
A Novel Super-Junction DT-MOS with Floating p Regions to Improve Short-Circuit Ruggedness
Micromachines, 2023 A novel super-junction (SJ) double-trench metal oxide semiconductor field effect transistor (DT-MOS) is proposed and studied using Synopsys Sentaurus TCAD in this article.
Sujie Yin +4 more
doaj +1 more source
Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices
Advanced Electronic Materials, Volume 11, Issue 1, January 2025.The nickel oxide (NiO) is investigated as a p‐type material to pair with n‐type (ultra‐)wide‐bandgap semiconductors to construct multidimensional power devices. A tunable acceptor concentration is revealed in NiO with breakdown field up to 6.3 MV cm−1.
Yunwei Ma +11 more
wiley +1 more source