Results 21 to 30 of about 178 (144)
Review of Technologies for High-Voltage Integrated Circuits
Tsinghua Science and Technology, 2022 High-Voltage power Integrated Circuits (HVICs) are widely used to realize high-efficiency power conversions (e.g., AC/DC conversion), gate drivers for power devices and LED lighting, and so on. The Bipolar-CMOS-DMOS (BCD) process is proposed to fabricate
Bo Zhang +5 more
doaj +1 more source
International Journal of Energy Research, Volume 2023, Issue 1, 2023., 2023 Matrix converters (MCs) are AC‐AC power conversion topologies widely explored and applied in the industry for their attractive features of sinusoidal input and output currents, considerable size reduction, and reliable operation due to the omission of bulky passive components.
Mohammad Ali +3 more
wiley +1 more source
Micro &Nano Letters, Volume 16, Issue 2, Page 121-126, February 2021., 2021 Abstract In this paper, a new trench‐gate field‐stop insulated gate bipolar transistor (IGBT) structure having improved performances is proposed, investigated and compared with the properties of the conventional trench‐gate field‐stop IGBT. An npn structure is introduced to the gate trench in order to reduce the Miller capacitance and gate‐collector ...
Yan‐juan Liu +3 more
wiley +1 more source
Superjunction Power Transistors With Interface Charges: A Case Study for GaN
IEEE Journal of the Electron Devices Society, 2020 Recent progress in p-GaN trench-filling epitaxy has shown promise for the demonstration of GaN superjunction (SJ) devices. However, the presence of n-type interface charges at the regrowth interfaces has been widely observed. These interface charges pose
Yunwei Ma +4 more
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Lateral GaN Schottky superjunction diodes with buried p-GaN by NH3-MBE [PDF]
APL Electronic DevicesIn this work, we demonstrate lateral GaN Schottky superjunction diodes using a p–n–p layer structure. The lateral nature of these devices circumvents the difficulties in achieving charge balance with etch and regrowth techniques. The p–n–p layer Schottky
Z. J. Biegler +4 more
doaj +1 more source
Modeling of Al Doping During 4H-SiC Chemical-Vapor-Deposition Trench Filling
IEEE Journal of the Electron Devices Society, 2019 Aluminum doping during 4H-SiC chemical-vapor-deposition (CVD) trench filling was numerically modeled toward precise design of high-voltage superjunction devices.
Kazuhiro Mochizuki +3 more
doaj +1 more source
Low-voltage superjunction technology
IET Circuits, Devices & Systems, 2007 : The scalability of superjunction and superfield power MOSFET technologies to break-down voltage lower than 250 V is investigated. The influence of device geometry and process architecture on the switching figures-of-merit of these relatively new classes of power switches with a breakdown voltage rating of 80 V is presented. The current flow and field
Deva N. Pattanayak +2 more
openaire +1 more source
Energies, 2022 This work presents a comparative analysis among four power MOSFET technologies: conventional Silicon (Si), Superjunction (SJ), Silicon Carbide (SiC) and Gallium Nitride (GaN), indicating the voltage, current and frequency ranges of the best performance ...
Edemar O. Prado +3 more
doaj +1 more source
A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile
IEEE Journal of the Electron Devices Society, 2021 In this article, we investigate a 4H-SiC super- junction (SJ) MOSFET structure with a charge-imbalance doping-profile. According to our numerical simulations and comparisons with the conventional SiC VDMOS (C-VDMOS) and SiC SJ VDMOS (SJ-VDMOS) devices ...
Hao Huang +6 more
doaj +1 more source
Machine Learning Algorithm for Efficient Design of Separated Buffer Super-Junction IGBT
Micromachines, 2023 An improved structure for an Insulated Gate Bipolar Transistor (IGBT) with a separated buffer layer is presented in order to improve the trade-off between the turn-off loss (Eoff) and on-state voltage (Von).
Ki Yeong Kim +4 more
doaj +1 more source