Results 11 to 20 of about 153,739 (252)
Degradation and recovery features of irradiated GAP LEDs [PDF]
The homo-transitional original and irradiated by electrons with E = 2 MeV; F = 5.9⋅1014 cm-2 ÷ 8.2⋅1016 cm-2 GaP LEDs were studied. The effect of radiation treatment on their electrical and optical characteristics was studied; the results of isochronous ...
O. P. Budnyk +6 more
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A Fast Recovery Vertical Superjunction MOSFET with n-Si and p-3C-SiC Pillars
In the traditional SJ MOSFET structure, n/p pillars with the same doping concentrations in the drift region are introduced to decrease the on-resistance.
Rongyu Gao +6 more
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Failure analysis of high voltage thyristor under impulse during reverse recovery period
To acquire the characteristic parameters which demonstrate the state of high voltage thyristor for clarifying its failure mechanism, an experiment platform which can not only generate high voltage pulses to thyristor at different moments during reverse ...
YE Mingtian +4 more
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The Effect of the Pillar Ripple on the Reverse Recovery in Superjunction MOSFETs
Fast dI/dt and oscillations often are the causes of failure during the reverse-recovery of superjunction MOSFETs. These issues become more prominent with shrinking the pitch size of the superjunction in an attempt to improve the overall performance from ...
H. Kang, N. Donato, F. Udrea
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This paper explores the operation mechanism of the superjunction structure in RC-IGBTs based on carrier distribution and analyzes the advantages and challenges associated with its application in RC-IGBTs for the first time.
Song Yuan +5 more
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In this paper, the feasibility of myocardial recovery is analyzed through a literature review. First, the phenomena of remodeling and reverse remodeling are analyzed, approached through the physics of elastic bodies, and the terms myocardial depression ...
Nikolaos Chrysakis +6 more
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Analysis of Reverse Recovery Characteristics of Anti-parallel Diode
Abstract Insulated gate bipolar transistor (IGBT) is widely used in various renewable green energy systems such as wind power generation and solar power generation at present. High-power IGBT modules usually include IGBT chips and anti-parallel diodes, and the transient characteristics of anti-parallel diodes will affect the external ...
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Evaluation Method for Reverse Recovery Characteristics of Thyristors Based on Charge Measurement
Abstract The change of operation mode of the HVDC project causes a change of the external characteristic of the converter valve, and the reverse recovery characteristic of the thyristor inside the converter valve changes accordingly.
Kunpeng Zha +5 more
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Detection of reverse recovery characteristics of power diodes
A setup was constituted for measuring reverse recovery (RR) waveforms of current I rr and voltage V rr , RR time t rr , RR charges Q
Wensheng Wei +3 more
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A novel dual switch DC/DC converter without reverse recovery problem
The traditional dual switch forward converter has a very large filter element and all the diodes on the primary and secondary sideshow the problem of reverse recovery and voltage oscillation.
Liying Zhou +3 more
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