A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching [PDF]
Micromachines, 2023 A novel split-gate SiC MOSFET with an embedded MOS-channel diode for enhanced third-quadrant and switching performances is proposed and studied using TCAD simulations in this paper.
Ping Li +3 more
doaj +2 more sources
Vertical GaN Power MOSFET with Integrated Fin-Shaped Diode for Reverse Conduction [PDF]
Nanoscale Research Letters, 2022 A vertical GaN power MOSFET featuring an integrated fin-shaped non-junction diode (FDMOS) is proposed to improve reverse conduction and switching characteristics.
Tao Sun +7 more
doaj +2 more sources
Normally-Off AlGaN/GaN HEMTs With a Low Reverse Conduction Turn-On Voltage
IEEE Access, 2023 Third quadrant operation is vital for power applications such as synchronous DC-DC converters and inverters, which require a low drain-source voltage drop to reduce conduction losses.
Dai-Jie Lin +5 more
doaj +3 more sources
Channel and Body-Diode Conduction Characteristics in 4H-SiC MOSFETs Under Third-Quadrant Switching Conditions [PDF]
MicromachinesThe third-quadrant operation of silicon carbide (SiC) MOSFETs is investigated from the perspective of carrier transport, focusing on the interaction between two parallel conduction paths.
Xiaobing Huang +3 more
doaj +2 more sources
In-cell bypass diodes for high-efficiency and shading-tolerant back contact silicon photovoltaic modules [PDF]
Nature CommunicationsPartial shading is a common condition in the outdoor deployment of photovoltaic modules, potentially causing significant power loss and severe thermal damage. Limitations of existing solutions in balancing effect and cost necessitate a thorough solution,
Hanbo Tang +9 more
doaj +2 more sources
A Novel Asymmetric Trench SiC Metal–Oxide–Semiconductor Field-Effect Transistor with a Poly-Si/SiC Heterojunction Diode for Optimizing Reverse Conduction Performance [PDF]
MicromachinesIn this paper, a novel asymmetric trench SiC MOSFET with a Poly-Si/SiC heterojunction diode (HJD-ATMOS) is designed to improve its reverse conduction characteristics and switching performance.
Yiren Yu +4 more
doaj +2 more sources
JSES International, 2020 Background: During reverse total shoulder arthroplasty, the functionality of the subscapularis remains unknown. The purpose of this study was to determine the integrity and function of the repaired subscapularis after reverse total shoulder arthroplasty ...
Michael Khazzam, MD +3 more
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Influence of Reverse Conduction on Dead Time Selection in GaN-Based Inverters for AC Motor Drives
IEEE AccessAlthough Gallium Nitride (GaN) Field Effect Transistor (FET) devices have found extensive application in DC-DC converters, their utilization in inverter motor drives remains an evolving area of study.
S. Musumeci +5 more
doaj +3 more sources
Clinical and kinematic responses to neck injuries in low-speed reverse motor vehicle collision tests: a human volunteer study [PDF]
BMC Musculoskeletal DisordersBackground Whiplash-associated disorders (WAD) are commonly attributed to rapid cervical acceleration–deceleration during motor vehicle collisions; however, the clinical significance of low-speed reverse collisions remains uncertain.
Hee Young Lee +10 more
doaj +2 more sources
Thermal Characterization of SiC Modules for Variable Frequency Drives
IEEE Open Journal of Power Electronics, 2021 Silicon carbide (SiC) devices can exhibit simultaneously high electro-thermal conductivity and extremely fast switching. To perform optimal designs showing the benefits of SiC in achieving efficiency, size, weight, and cost objectives for electric ...
Marzieh Karami +3 more
doaj +1 more source