Results 11 to 20 of about 50,432 (316)

, low reverse-conduction loss and enhanced stability [PDF]

International Conference on ASIC, 2021
A novel p-GaN gate topology is proposed to simultaneously achieve high threshold voltage (VTH), low reverse-conduction loss, and enhanced VTH stability in E-mode p-GaN gate HEMT.
Chengcai Wang, Zheng, Zheyang, Lingling Li, Junting Chen, Liu, Ling, Mengyuan Hua, Hua, Mengyuan, Chen, Junting, Li, Lingling, Wang, Chengcai, Kevin J. Chen, Zheyang Zheng, Chen, Kevin J., Ling Liu   +13 more
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Dead Time Reverse Conduction Investigation in GaN-Based Inverter for Motor Drives [PDF]

Annual Conference of the IEEE Industrial Electronics Society, 2022
The paper deals with the reverse conduction during the dead time of low-voltage GaN FETs in inverters for motor control applications. The current variation caused by the sinusoidal modulation in an AC motor drive leads to a different dead time losses
Bojoi, Radu Iustin, Palma, Marco, Mandrile, Fabio, Musumeci, Salvatore, Barba, Vincenzo   +4 more
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Impact of temperature and switching rate on forward and reverse conduction of GaN and SiC Cascode devices : a technology evaluation [PDF]

The 10th International Conference on Power Electronics, Machines and Drives (PEMD 2020), 2021
This paper provides the first comprehensive study on the forward and reverse conduction and reliability performance of the Gallium Nitride (GaN) and Silicon Carbide (SiC) power cascode devices, in comparison with standard silicon & SiC power MOSFETs and ...
Yang, J., Hedayati, M., B. Stark, Alatise, Olayiwola, Y. Gunaydin, Mellor, P., Gonzalez, Jose Ortiz, Yuan, X., P. Mellor, Gunaydin, Yasin, Mellor, Phil, X. Yuan, Hedayati, Mohammad, J. Yang, Yang, Juefei, Gonzalez, Jose O., J. O. Gonzalez, S. Jahdi, Yuan, Xibo, Stark, B., Gunaydin, Y., M. Hedayati, O. Alatise, Jahdi, Saeed, Alatise, Olayiwola M., Stark, Bernard   +25 more
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Accurate Measurement of Dynamic ON-state Resistance of GaN Devices under Reverse and Forward Conduction in High Frequency Power Converter [PDF]

IEEE transactions on power electronics, 2020
Because of trapped charges in GaN transistor structure, device dynamic ON-state resistance RDSon is increased when it is operated in high frequency switched power converters, in which device is possibly operated by zero voltage switching (ZVS) to reduce ...
Johnson, Mark, Evans, Paul Leonard, Videt, Arnaud, Idir, Nadir, Li, Ke, Evans, Paul, Johnson, Christopher Mark   +6 more
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Investigation of SiC MOSFET channel reverse conduction [PDF]

International Conference on Power Electronics and Drive Systems, 2019
International audienceIn this study, forward and reverse conduction of SiC MOSFETs are characterized. These measurements allow us to demonstrate that forward and reverse output characteristics are different, while this was not taken into account in the ...
Nguyen, Quang, Tounsi, Patrick, Jean-Pierre Fradin, Nguyen Quang Chuc, Fradin, Jean-Pierre, Patrick Tounsi, Jean-Michel Reynes, Reynes, Jean-Michel   +7 more
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A Three-Level GaN Driver for High False Turn-ON Tolerance With Minimal Reverse Conduction Loss

IEEE Open Journal of Power Electronics, 2023
This paper presents a three-level gate driver for GaN HEMTs (Gallium Nitride High Electron Mobility Transistors) for high false turn-on tolerance and low reverse conduction loss during both dead time at turn-on and turn-off.
Takehiro Takahashi, Takumi Takehisa, Jun Furuta, Michihiro Shintani, Kazutoshi Kobayashi   +4 more
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Reverse Conduction Loss Minimization in GaN‑Based PMSM Drive [PDF]

Electronics, 2020
Gallium nitride (GaN) devices are becoming more popular in power semiconductor converters. Due to the absence of the freewheeling substrate diode, the reverse conduction region is used in GaN transistors to conduct the freewheeling current.
Jiri Lettl, Filipp Frolov, Ondrej Lipcak, Pavel Skarolek   +3 more
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Dynamic On-Resistance Characterization of GaN Power HEMTs Under Forward/Reverse Conduction Using Multigroup Double Pulse Test [PDF]

IEEE transactions on power electronics
In bridgeless power factor correction converters and inverters, GaN high-electron-mobility transistors (HEMTs) operate in both forward and reverse conduction modes, which may feature different dynamic on-resistance (RON) behaviors.
Sheng, Kuang, Wu, Xinke, Xie, Zonglun, Chen, Kevin J., Dong, Zezheng, Sun, Jiahui   +5 more
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Energy efficiency of a SiC MOSFET propulsion inverter accounting for the MOSFET's reverse conduction and the blanking time [PDF]

EPE, 2017
MOSFET devices have a body diode that allows reverse conduction, additionally, when a negative drain-source voltage is present, the MOSFET channel conduction can also be controlled by applying a gate-source voltage above the threshold voltage level. In a
Acquaviva, Alessandro, Torbjorn Thiringer, Alessandro Acquaviva, Thiringer, Torbj\uf6rn, Thiringer, Torbjörn, Thiringer, Torbjörn,, Acquaviva, Alessandro,   +6 more
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A study on power losses of the 50 kVA SiC converter including reverse conduction phenomenon [PDF]

, 2016
This paper deals with performance of the 50 kVA three-phase converter built with switches based on SiC MOSFET and anti-parallel Schottky diodes. In contrast to popular IGBT converters, a negative switch current is capable of flowing through the reverse ...
Płatek, T., Rąbkowski, J.
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