Results 11 to 20 of about 47,754 (258)
电力工程技术, 2023 The controlled-type soft-switching technology based on critical conduction mode (CRM) is an effective way to achieve zero voltage switching (ZVS) of switches.
WU Chao +3 more
doaj +1 more source
Micromachines, 2023 A 6500 V SiC trench MOSFET with integrated unipolar diode (UD-MOS) is proposed to improve reverse conduction characteristics, suppress bipolar degradation, and reduce switching loss.
Hao Wu +6 more
doaj +1 more source
Applied Sciences, 2021 A conduction transformation-based coordination method for product structure optimization design was proposed for the conflict between satisfying product functional requirements and realizing adaptive modification.
Jianqiang Zhou +5 more
doaj +1 more source
Micromachines, 2023 This paper explores the operation mechanism of the superjunction structure in RC-IGBTs based on carrier distribution and analyzes the advantages and challenges associated with its application in RC-IGBTs for the first time.
Song Yuan +5 more
doaj +1 more source
Conductive Hydrogels with Dynamic Reversible Networks for Biomedical Applications [PDF]
Advanced Healthcare Materials, 2021 AbstractConductive hydrogels (CHs) are emerging as a promising and well‐utilized platform for 3D cell culture and tissue engineering to incorporate electron signals as biorelevant physical cues. In conventional covalently crosslinked conductive hydrogels, the network dynamics (e.g., stress relaxation, shear shining, and self‐healing) required for ...
Yong Xu +6 more
openaire +3 more sources
High-Voltage Polarization-Superjunction GaN HEMT With Built-In SBD for Low Reverse Conduction Loss
IEEE Journal of the Electron Devices Society, 2022 A GaN Reverse-Conducting HEMT (RC-HEMT) is proposed and fabricated on the GaN/AlGaN/GaN platform. It features an integrated Schottky barrier diode (SBD) to realize reverse conduction and the double-heterojunction to enhance breakdown voltage (BV ...
Tao Sun +7 more
doaj +1 more source
The Effect of the Pillar Ripple on the Reverse Recovery in Superjunction MOSFETs
Power Electronic Devices and Components, 2022 Fast dI/dt and oscillations often are the causes of failure during the reverse-recovery of superjunction MOSFETs. These issues become more prominent with shrinking the pitch size of the superjunction in an attempt to improve the overall performance from ...
H. Kang, N. Donato, F. Udrea
doaj +1 more source
Reducing the Impact of Reverse Currents in Tunnel FET Rectifiers for Energy Harvesting Applications
IEEE Journal of the Electron Devices Society, 2017 RF to dc passive rectifiers can benefit from the superior performance at low voltage of tunnel transistors. They have shown higher power conversion efficiency (PCE) at low input power than Si FinFETs counterparts.
Juan Nunez, Maria J. Avedillo
doaj +1 more source
Energies, 2023 This article presents the concept of switching and conduction loss reduction in a T-NPC inverter based on IGBT transistors. The method of limiting switching losses involves the connection of an LC circuit designed to cause transistors in vertical ...
Andrzej Mondzik
doaj +1 more source
A Power MOSFET With P-Base Schottky Diode and Built-In Channel Diode for Fast Reverse Recovery
IEEE Journal of the Electron Devices Society, 2021 A power MOSFET with P-base Schottky diode and built-in channel diode is proposed and numerically investigated in this article. The P-base Schottky diode formed by the P-base Schottky contact is in reverse series with the P-base/N-drift junction diode ...
Ping Li +3 more
doaj +1 more source