Results 21 to 30 of about 47,754 (258)
Nowadays, power converters with reduced cost, compact size and high efficiency are evolving to overcome the emergent challenges of renewable energy integrations.
Danish Khan +5 more
doaj +1 more source
"Reversed" alamethicin conductance in lipid bilayers
Alamethicin at a concentration of 2 micrograms/ml on one side of a lipid bilayer, formed at the tip of a patch clamp pipette from diphytanoyl phosphatidylcholine and cholesterol (2:1 mol ratio) in aqueous 0.5 M KCl, 5 mM Hepes, pH 7.0, exhibits an asymmetric current-voltage curve, only yielding alamethicin currents when the side to which the peptide ...
Taylor, R.J., de Levie, R.
openaire +2 more sources
A Three-Level GaN Driver for High False Turn-ON Tolerance With Minimal Reverse Conduction Loss
This paper presents a three-level gate driver for GaN HEMTs (Gallium Nitride High Electron Mobility Transistors) for high false turn-on tolerance and low reverse conduction loss during both dead time at turn-on and turn-off.
Takehiro Takahashi +4 more
doaj +1 more source
Investigation of Dead Time Losses in Inverter Switching Leg Operation: GaN FET vs. MOSFET Comparison
This paper investigates the commutation transients of MOSFET and GaN FET devices in motor drive applications during hard-switching and soft-switching commutations at dead time operation. This study compares the switching behaviors of MOSFETs and GaN FETs,
Vincenzo Barba +4 more
doaj +1 more source
Recovery of complete left bundle branch block in dilated cardiomyopathy after optimal heart failure treatment: a case report [PDF]
Complete left bundle branch block (CLBBB) is a significant cardiac conduction abnormality often associated with dilated cardiomyopathy (DCM). This case report highlights the improvement in CLBBB and symptom relief through reverse cardiac remodeling in a ...
Geum Ko, Jae-Geun Lee
doaj +1 more source
New metal-free and metallophthalocyanine compounds (Zn, Co, Ni, and Cu) were synthesized using 2-hydroxymethyl-1,4-benzodioxan and 4-nitrophthalonitrile compounds.
Semih Gorduk +4 more
doaj +1 more source
The high switching speed of GaN HEMT will cause serious crosstalk in the phase-leg configuration. The negative turn-off driving voltage is usually recommended to avoid the parasitic shoot-through.
Haihong Qin +5 more
doaj +1 more source
We investigated the temperature-dependent reverse characteristics (JR-VR-T) of vertical GaN Schottky-barrier diodes with and without a fluorine-implanted edge termination (ET).
Vishwajeet Maurya +7 more
doaj +1 more source
The mechanisms of reverse leakage in InGaN/GaN multiple-quantum-wells (MQWs) blue and green light-emitting diodes (LEDs) were studied through analyzing the current–voltage (I–V) characteristics with the temperature ranging from 50 to
Ting Zhi +5 more
doaj +1 more source
Influence of Reverse Conduction on Dead Time Selection in GaN-Based Inverters for AC Motor Drives
Although Gallium Nitride (GaN) Field Effect Transistor (FET) devices have found extensive application in DC-DC converters, their utilization in inverter motor drives remains an evolving area of study.
S. Musumeci +5 more
doaj +1 more source

