Results 31 to 40 of about 50,432 (316)

Experimental Evaluation of Dead Time Reverse Conduction Losses in Motor Drives Applications [PDF]

open access: yes, 2022
The paper deals with the dead-time impact on the reverse conduction of low-voltage GaN FETs in inverter topology for motor control applications. The current variation in AC motor drive leads to a different dead-time losses mechanism compared to the DC-DC
Palma M.   +3 more
core   +1 more source

Conduction Band Engineering of Half-Heusler Thermoelectrics Using Orbital Chemistry [PDF]

open access: yes, 2021
Semiconducting half-Heusler (HH, XYZ) phases are promising thermoelectric materials owing to their versatile electronic properties. Because the valence band of half-Heusler phases benefit from the valence band extrema at several high-symmetry points in ...
Shuping, Guo   +4 more
core   +1 more source

High-Voltage Polarization-Superjunction GaN HEMT With Built-In SBD for Low Reverse Conduction Loss

open access: yesIEEE Journal of the Electron Devices Society, 2022
A GaN Reverse-Conducting HEMT (RC-HEMT) is proposed and fabricated on the GaN/AlGaN/GaN platform. It features an integrated Schottky barrier diode (SBD) to realize reverse conduction and the double-heterojunction to enhance breakdown voltage (BV ...
Tao Sun   +7 more
doaj   +1 more source

The Effect of the Pillar Ripple on the Reverse Recovery in Superjunction MOSFETs

open access: yesPower Electronic Devices and Components, 2022
Fast dI/dt and oscillations often are the causes of failure during the reverse-recovery of superjunction MOSFETs. These issues become more prominent with shrinking the pitch size of the superjunction in an attempt to improve the overall performance from ...
H. Kang, N. Donato, F. Udrea
doaj   +1 more source

Investigation of GaN-HEMTs in reverse conduction [PDF]

open access: yes, 2022
S.533-540This work investigates the reverse conduction characteristics of 600 V-class GaN-HEMTs. The behavior of a conventional HEMT is analyzed and compared to the reverse conduction of an improved HEMT structure with integrated free-wheeling diode. The
Quay, Rüdiger   +4 more
core  

"Reversed" alamethicin conductance in lipid bilayers

open access: yesBiophysical Journal, 1991
Alamethicin at a concentration of 2 micrograms/ml on one side of a lipid bilayer, formed at the tip of a patch clamp pipette from diphytanoyl phosphatidylcholine and cholesterol (2:1 mol ratio) in aqueous 0.5 M KCl, 5 mM Hepes, pH 7.0, exhibits an asymmetric current-voltage curve, only yielding alamethicin currents when the side to which the peptide ...
Taylor, R.J., de Levie, R.
openaire   +2 more sources

Reducing the Impact of Reverse Currents in Tunnel FET Rectifiers for Energy Harvesting Applications

open access: yesIEEE Journal of the Electron Devices Society, 2017
RF to dc passive rectifiers can benefit from the superior performance at low voltage of tunnel transistors. They have shown higher power conversion efficiency (PCE) at low input power than Si FinFETs counterparts.
Juan Nunez, Maria J. Avedillo
doaj   +1 more source

T-NPC Soft-Commutated Inverter Based on Reverse Blocking IGBTs with the Novel Concept of a DESAT Control Circuit in the Gate Driver

open access: yesEnergies, 2023
This article presents the concept of switching and conduction loss reduction in a T-NPC inverter based on IGBT transistors. The method of limiting switching losses involves the connection of an LC circuit designed to cause transistors in vertical ...
Andrzej Mondzik
doaj   +1 more source

Investigation of forward and reverse current conduction in GaN films by conductive atomic force microscopy [PDF]

open access: yes, 2004
We have used conductive atomic force microscopy (C–AFM) to investigate the forward and reverse bias current conduction of homo- and heteroepitaxial GaN-based films grown by molecular beam epitaxy.
Molnar, R   +11 more
core   +2 more sources

Power Loss Analysis in a SiC/IGBT Propulsion Inverter Including Blanking Time, MOSFET’s Reverse Conduction and the Effect of Thermal Feedback Using a PMSM Model

open access: yesIECON 2020 The 46th Annual Conference of the IEEE Industrial Electronics Society, 2020
This paper presents a comparison of power losses for two silicon carbide (SiC) and one silicon insulated gate bipolar transistor (Si IGBT) power modules in a three-phase inverter, when considering the effect of blanking time and the MOSFET’s reverse ...
S. Amirpour, T. Thiringer, D. Hagstedt
semanticscholar   +1 more source

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