Results 71 to 80 of about 42,361 (184)

Optimization of contact transscleral diode laser cyclophotocoagulation technique in patients with terminal glaucoma on the basis of ultrasound biomycroscopy

open access: yesОфтальмохирургия, 2013
Purpose. Rationales for parameters of laser irradiation in contact transscleral diode laser cyclophotocoagulation (Diode CYC) taking into account ciliary body changes determined by means of ultrasound biomycroscopy (UBM) in patients with terminal ...
E.V. Egorova   +3 more
doaj  

Flexible ultrathin-body single-photon avalanche diode sensors and CMOS integration

open access: yesOptics Express, 2016
We proposed the world's first flexible ultrathin-body single-photon avalanche diode (SPAD) as photon counting device providing a suitable solution to advanced implantable bio-compatible chronic medical monitoring, diagnostics and other applications.
Sun, P. (author)   +2 more
openaire   +4 more sources

Heterojunction Diode Shielded SiC Split-Gate Trench MOSFET With Optimized Reverse Recovery Characteristic and Low Switching Loss

open access: yesIEEE Access, 2019
A split-gate SiC trench MOSFET with a hetero-junction diode (HJD) is proposed and numerically analyzed in this paper. The proposed structure features the HJD to effectively suppress the turn-on of the parasitic body diode and reduce the depletion region ...
Junjie An, Shengdong Hu
doaj   +1 more source

On the Low-Frequency Noise Characterization of Z2-FET Devices

open access: yesIEEE Access, 2019
This paper addresses the low-frequency noise characterization of Z2-FET structures. These double-gated p-i-n diode devices have been fabricated at STMicroelectronics in an ultrathin body and box (UTBB) 28-nm FDSOI technology and designed to operate as 1T-
Carlos Marquez   +8 more
doaj   +1 more source

Change in SiC MOSFET body-diode voltage drop in TO-247 packages during inverse-mode and forward-mode power cycling test

open access: yes, 2022
Body-diode voltage drop has been identified as a reliable parameter for both as a temperature-sensitive electrical parameter (TSEP) to estimate the SiC MOSFET junction temperature and as a failure precursor to identify any package related degradation ...
Chaudhury, K. R.   +4 more
core  

Mitigating reverse recovery power losses in MOSFET switching cell using extra Schottky diodes—Application to voltage source inverter

open access: yesPower Electronic Devices and Components
This article introduces a comparative study of the losses in Voltage Source Inverter (VSI) based on Metal-Oxide- Semiconductor Field-Effect Transistors (MOSFETs) depending on whether or not the latter are associated with antiparallel diodes. These diodes
Mohammed Bououd   +4 more
doaj   +1 more source

Characterization of body diodes in the-state-of-the-art SiC FETs-Are they good enough as freewheeling diodes?

open access: yes, 2018
This paper investigates the switching phenomenon of body diodes in the state-of-the-art discrete SiC FETs. A comparative performance evaluation of the body diodes in planar and double-trench SiC MOS-FETs, and trench cascode SiC JFET is performed using standard double pulse test methodology. In addition, the switching characterization of planar discrete
Tiwari, Subhadra   +5 more
openaire   +1 more source

Many-body Josephson diode effect in superconducting quantum interferometers

open access: yes
We propose a many-body mechanism for a strong Josephson diode effect (JDE) in an interacting nanoscale SQUID formed by two parallel quantum dots coupled to superconducting leads. Unlike conventional diode behavior, where nonreciprocity originates from a skewed current-phase relation within a single, continuously evolving ground state, the JDE reported ...
Zhang, Zelei   +3 more
openaire   +2 more sources

Diode Laser

open access: yes, 2014
A diode laser includes a p-contact layer, a n-contact layer, and a wafer body disposed between the p-contact layer and the n-contact layer, the wafer body having a front end and a back end.
Zhu, Lin, Zhao, Yunsong
core  

Investigation on the use of the MOSFET SiC body diode for junction temperature measurement

open access: yes, 2020
International audienceAs Silicon-based semiconductors approach their limits in different areas, wide bandgap devices, such as Silicon Carbide components, offer an excellent alternative in many applications.
Tounsi, Patrick   +3 more
core   +1 more source

Home - About - Disclaimer - Privacy