Results 81 to 90 of about 42,361 (184)

Practical investigation of the gate bias effect on the reverse recovery behavior of the body diode in power MOSFETs

, 2014
This work considers an alternative method of reducing the body diode reverse recovery by taking advantage of the MOSFET body effect, and applying a bias voltage to the gate before reverse recovery.
Lars Press Petersen, Kristian Lindberg-Poulsen, Ziwei Ouyang, Michael A. E. Andersen, Lindberg-Poulsen, Kristian, Ouyang, Ziwei, Petersen, Lars Press, Andersen, Michael A. E.   +7 more
core   +1 more source

Is an antiparallel SiC-Schottky diode necessary? Calorimetric analysis of SiC-MOSFETS switching behavior

, 2022
S.448-454Within this paper the switching losses of a Wolfspeed 25mOhm bare die SiC-MOSFET are measured in a hard switching 800 V DCDC-converter with five different commutation partners. A small and a large SiC Schottky diode, an SiC-MOSFET body diode and
Kreutzer, O., Billmann, M., März, M.
core  

Ekstraksi Benda Asing Lampu Led di Bronkus dengan Bronkoskop Kaku

Jurnal Kesehatan Andalas, 2014
AbstrakAspirasi benda asing adalah masalah yang relatif sering ditemukan pada anak dan merupakan masalah serius yang bisa berakibat fatal. Benda asing di traktus respiratorius harus segera dikeluarkan dalam kondisi dan peralatan optimal dan dengan trauma
Fachzi Fitri, Tuti Nelvia
doaj  

Forward gated-diode method for extracting gate oxide thickness and body doping concentration

, 2010
In this paper, the forward gated-diode method is used to extract the gate oxide thickness and doping concentration of MOS device simultaneously. The gate oxide thickness and body doping concentration are first extracted from the recombination-generation (
Chenfei Zhang, Ma, Chenyue, He, Frank, Zhang, Chenfei, Xiufang Zhang, Zhang, Xiufang, Frank He, Zhiwei Liu, Liu, Zhiwei, Chenyue Ma   +9 more
core   +1 more source

Investigation of Threshold Voltage Instability and Bipolar Degradation in 3.3 kV Conventional Body Diode and Embedded SBD SiC MOSFET

The 3.3 kV SiC MOSFETs are essential for traction applications, so it is important to investigate the reliability of the recently developed high voltage MOSFETs and power modules as they are believed to be more susceptible to the effects of basal plane ...
Krishna Murthy, Hithiksha, Lim, Jang-Kwon, Lim, Jang-Kwon,, Krishna Murthy, Hithiksha,, Bakowski, Mietek,, Bakowski, Mietek   +5 more
core   +1 more source

Forward gated-diode method for parameter extraction of MOSFETs

, 2011
The forward gated-diode method is used to extract the dielectric oxide thickness and body doping concentration of MOSFETs, especially when both of the variables are unknown previously.
Chenfei Zhang, Zhang, Chenfei, Xiufang Zhang, Zhiwei Liu, Wang, Guozeng, Liu, Zhiwei, He, Jin, Guozeng Wang, Jin He, Ma, Chenyue, Guo, Xinjie, Zhang, Xiufang, Chenyue Ma, Xinjie Guo, Zhang Yang, Yang, Zhang   +15 more
core   +1 more source

Channel and Body-Diode Conduction Characteristics in 4H-SiC MOSFETs Under Third-Quadrant Switching Conditions. [PDF]

Micromachines (Basel)
Huang X, Song Y, Zhong C, Wang Z.
europepmc   +1 more source

Modeling And Optimization Of Body Diode Reverse Recovery Characteristics Of Ldmos Transistors

, 2006
As switching speeds for DC-DC converter applications keep becoming faster and faster and voltage requirements become smaller and smaller, the need for new device structures becomes more prevalent.
Deschaine, Wesley
core  

Fascia-Level Temperature Kinetics During Multi-Wavelength Diode Laser Irradiation: A Cadaveric Study. [PDF]

J Cosmet Dermatol
Yi KH, Park Y, Cartier H, Garson S, Ascher B.   +4 more
europepmc   +1 more source

Comparison of body diode switching characteristics of 650V power devices

IEICE Electronics Express
Hattori, Yoshiyuki, Kachi, Tetsu
openaire   +1 more source