Low On-Resistance in Normally-Off 4H-SiC Accumulation MOSFET
, 2005 Eiichi Okuno +4 more
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Self-supplied isolated gate driver for SiC power MOSFETs based on bi-level modulation scheme
, 2017 Jorge García +3 more
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Gate driver with high common mode rejection and self turn-on mitigation for a 10 kV SiC MOSFET enabled MV converter [PDF]
, 2017 Dipen Narendra Dalal +6 more
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Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode Based Reverse Voltage Blocking Switch for Medium Voltage Current Source Inverter Application [PDF]
, 2023 Sneha Narasimhan +3 more
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Thermal Impedance Characterization Using Optical Measurement Assisted by Multi-Physics Simulation for Multi-Chip SiC MOSFET Module. [PDF]
Micromachines (Basel), 2020 Kim MK, Yoon SW.
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Performance comparison of 1200V 100A SiC MOSFET and 1200V 100A silicon IGBT
, 2013 Gangyao Wang +5 more
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Latest Advances in the Implementation and Characterization of High-K Gate Dielectrics in SiC Power MOSFETs [PDF]
, 2022 Lars Knoll +7 more
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SPICE Modeling of SiC MOSFET Considering Interface-Trap Influence
, 2018 Yuming Zhou
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Contribution to the Study of the SiC MOSFETs Gate Oxide
, 2018 Les MOSFET en SiC sont appelées à remplacer les IGBT en Silicium pour des applications de demandant une plus forte vitesse de commutation. Cependant, les MOSFET en SiC ont encore quelques problèmes de fiabilité, tels que la robustesse de la diode interne ou bien la robustesse de l'oxyde de grille.
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