Research on Single-Event Burnout Reinforcement Structure of SiC MOSFET. [PDF]
Micromachines (Basel)Liao Q, Liu H.
europepmc +1 more source
A High-Density 4H-SiC MOSFET Based on a Buried Field Limiting Ring with Low Q<sub>gd</sub> and R<sub>on</sub>. [PDF]
Micromachines (Basel)Cui W, Guo J, Xu H, Zhang DW.
europepmc +1 more source
Gate Driver Untuk Susunan Seri Sic-Mosfet Menggunakan Pengendali Proporsional-Integral (Pi)
Koneksi serial SiC-MOSFET dapat digunakan untuk mendapatkan tegangan yang lebih tinggi daripada tegangan tiap perangkat SiC-MOSFET, namun dapat muncul permasalahan berupa ketidakseimbangan tegangan drain-source di antara perangkat-perangkat yang ...
Dr. Ir. Tri Nurwati, S.T., M.T. +2 more
core +1 more source
Study and implementation of SiC MOSFET power modules for future utilisation in railway converters
, 2013 Le Carbure de Silicium (SiC) va permettre de repousser les limites des convertisseurs dans trois directions : tenue en tension élevée, haute température de fonctionnement et forte vitesse de commutation.
Fabre, Joseph
core
4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses. [PDF]
Materials (Basel)Anoldo L +5 more
europepmc +1 more source
Contribution to the study of the SiC MOSFETs gate oxide
Contribution à l'étude de la robustesse de l'oxyde de grille des MOSFET en SiC Les MOSFET en SiC sont appelées à remplacer les IGBT en Silicium pour des applications de demandant une plus forte vitesse de commutation. Cependant, les MOSFET en SiC ont encore quelques problèmes de fiabilité, tels que la robustesse de la diode interne ou ...
openaire +2 more sources
Study of n-Channel 4H-SiC MOSFETs with a High-<i>k</i>/SiO<sub>2</sub> Stacked Gate Dielectric and a p<sup>+</sup>-Polysilicon Gate. [PDF]
Micromachines (Basel)Lin Z, Cheng N, Cai W, Hu J, Hu S.
europepmc +1 more source
Femtosecond Laser Two-Photon Absorption for Simulating Single-Event Effects and Defining the Safe Operating Area of SiC Power MOSFETs. [PDF]
Micromachines (Basel)Zhang C +5 more
europepmc +1 more source
Reliability-oriented performance evaluation of PV inverters using wide bandgap semiconductors. [PDF]
PLoS OneKshatri SS +4 more
europepmc +1 more source
Packaging Design and Thermal Characterization of 3D Double-Sided Cooling Automotive SiC Power Modules with Reliable Junction Temperature Sensing. [PDF]
Sensors (Basel)Li C +5 more
europepmc +1 more source