Results 131 to 140 of about 4,517 (219)

An Investigation of Gate Voltage Oscillation and Its Suppression for SiC MOSFET [PDF]

Silicon Carbide (SiC) MOSFET has undergone a rapid development and commercialization in recent years due to its superior features. However, the mainstream commercial SiC MOFESTs are often fitted to packages that are previously designed for silicon-based ...
Zhang W, Elgendy MA, Thompson GN, Dahidah MSA, Wang X, Pickert V   +5 more
core  

Research on Single-Event Burnout Reinforcement Structure of SiC MOSFET. [PDF]

Micromachines (Basel)
Liao Q, Liu H.
europepmc   +1 more source

Analytical models of temperature impact on SiC MOSFET structure transconductance and output conductance

, 2009
U ovom radu su prikazani rezultati istraživanja i modelovanja karakteristika jedne od danas najčešće korišćenih elektronskih komponenti MOSFETa (Metal Oxide Semiconductor Field Effect Transistor) izrađenog na bazi SiC (silicijum karbida).
Lukić, Petar, Lukić, Vladan M., Šašić, Rajko M.   +2 more
core  

Contribution to the study of the SiC MOSFETs gate oxide

Contribution à l'étude de la robustesse de l'oxyde de grille des MOSFET en SiC Les MOSFET en SiC sont appelées à remplacer les IGBT en Silicium pour des applications de demandant une plus forte vitesse de commutation. Cependant, les MOSFET en SiC ont encore quelques problèmes de fiabilité, tels que la robustesse de la diode interne ou ...
openaire   +2 more sources

4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses. [PDF]

Materials (Basel)
Anoldo L, Zanetti E, Coco W, Russo A, Fiorenza P, Roccaforte F.   +5 more
europepmc   +1 more source

Reliability-oriented performance evaluation of PV inverters using wide bandgap semiconductors. [PDF]

PLoS One
Kshatri SS, Dhillon J, Mishra S, Sharma NK, Jadoun VK.   +4 more
europepmc   +1 more source

Channel and Body-Diode Conduction Characteristics in 4H-SiC MOSFETs Under Third-Quadrant Switching Conditions. [PDF]

Micromachines (Basel)
Huang X, Song Y, Zhong C, Wang Z.
europepmc   +1 more source

Effects of parasitic capacitance on switching transients and thermal performance in a single-phase SiC power MOSFET inverter. [PDF]

Sci Rep
Cheng HC, Jhu WY, Liu YC, Yu CF, Chiu PK, Chang TC.   +5 more
europepmc   +1 more source

Cryogenic neuromorphic circuits using gate-controlled negative differential resistance in silicon carbide. [PDF]

Nat Commun
Yang X, Porter M, Qin Y, Yang Z, Gong H, Jin L, Xi Z, Wang H, Zhu L, Zhang Y, Shao L.   +10 more
europepmc   +1 more source

Simulation Study of Enhancement-Mode <i>β</i>-Ga₂O₃ MOSFETs on a Novel P-Ga₂O₃/AlN/SiC Substrate. [PDF]

Micromachines (Basel)
Lu W, Zhou C, Wang D, Liu Y, Wang P, Wang G.   +5 more
europepmc   +1 more source