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Developments of SiC DioMOS (Diode Integrated SiC MOSFET)
MRS Proceedings, 2014ABSTRACTSiC power devices can handle large power and high frequency switching beyond the Si power devices. Typical full-SiC power modules are composed of both SiC-MOSFETs and SiC-SBDs to suppress the degradation of Ron of SiC-MOSFET during the bipolar reverse-current flow while there will be unfavorable consequences such as increased material cost ...
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Reliability and stability of SiC power mosfets and next-generation SiC MOSFETs
2014 IEEE Workshop on Wide Bandgap Power Devices and Applications, 2014B. Hull +13 more
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2010
In the previous chapters, it was demonstrated that the maximum operating frequency of high voltage bipolar silicon power devices is limited by the power dissipation due to their slow switching transients. The rate of rise of the voltage and rate of fall of the current during the turn-off process in these devices is slowed down by the presence of the ...
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In the previous chapters, it was demonstrated that the maximum operating frequency of high voltage bipolar silicon power devices is limited by the power dissipation due to their slow switching transients. The rate of rise of the voltage and rate of fall of the current during the turn-off process in these devices is slowed down by the presence of the ...
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Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures
Micromachines, 2021Chih-Fang Huang +2 more
exaly
A New Gate Driver for Suppressing Crosstalk of SiC MOSFET
Electronics (Switzerland), 2022Mei Liang
exaly
Comparative Study on Reliability of Conventional SiC MOSFET and JBS Integrated SiC MOSFET
2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)Moufu Kong +5 more
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SiC power MOSFETs and their application
2021Alberto Castellazzi, Andrea Irace
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