1200V 4H-SiC MOSFET with a High-K Source Gate for Improving Third-Quadrant and High Frequency Figure of Merit Performance. [PDF]
Micromachines (Basel)Li M, Qiu Z, Li T, Kang Y, Lu S, Hu X.
europepmc +1 more source
Reliability Analysis of SiC MOSFET Power Module for More Electric Aircraft Motor Drive Applications
, 2018 Shane O'Donnell +2 more
openalex +2 more sources
Shaping SiC MOSFET Voltage and Current Transitions by Intelligent Control for Reduced EMI Generation [PDF]
, 2019 Congwen Xu +3 more
openalex +1 more source
A High-Density 4H-SiC MOSFET Based on a Buried Field Limiting Ring with Low Q<sub>gd</sub> and R<sub>on</sub>. [PDF]
Micromachines (Basel)Cui W, Guo J, Xu H, Zhang DW.
europepmc +1 more source
Radiation study on the parallel topology of SiC MOSFET and Si IGBT inverter
, 2023 Yuxing Dai +7 more
openalex +1 more source
Compact electro-thermal modeling of a SiC MOSFET power module under short-circuit conditions
, 2017 Lorenzo Ceccarelli +4 more
openalex +2 more sources
Research on Single-Event Burnout Reinforcement Structure of SiC MOSFET. [PDF]
Micromachines (Basel)Liao Q, Liu H.
europepmc +1 more source
Hall Effect and Admittance Measurements of n-Channel 6H-SiC MOSFETs
, 2007 Kin Kiong Lee +4 more
openalex +1 more source
4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses. [PDF]
Materials (Basel)Anoldo L +5 more
europepmc +1 more source