Dynamic Performance Evaluation of Bidirectional Bridgeless Interleaved Totem-Pole Power Factor Correction Boost Converter. [PDF]
Micromachines (Basel)Cheng HC +5 more
europepmc +1 more source
Wavelength-Dependent Electrical Readout of Spin Ensembles in a Thin-Film SiC-on-Insulator Platform. [PDF]
Nano LettZappacosta A +4 more
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Structurally optimized SiC CMOS FinFET for high-temperature and low-power SoC logic integration. [PDF]
Sci RepKwon TS +7 more
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Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances. [PDF]
Materials (Basel)Pu T, Li X, Li L, Ao JP.
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Novel 4H-SiC Double-Trench MOSFETs with Integrated Schottky Barrier and MOS-Channel Diodes for Enhanced Breakdown Voltage and Switching Characteristics. [PDF]
Nanomaterials (Basel)Wang P +10 more
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Sensorless Junction Temperature Estimation of Onboard SiC MOSFETs Using Dual-Gate-Bias-Triggered Third-Quadrant Characteristics. [PDF]
Sensors (Basel)Lu Y +6 more
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Performance evaluation of a bi-directional synchronous H6 inverter for AC/DC system interaction with SiC and Si-Based at different switching frequencies. [PDF]
PLoS OneAlshammari MS, Namadmalan A, Duffy M.
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A 3.3 kV SiC Semi-Superjunction MOSFET with Trench Sidewall Implantations. [PDF]
Micromachines (Basel)Boccarossa M +8 more
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Advances in SiC power MOSFET technology
Microelectronics Reliability, 2003 Abstract In recent years, SiC has received increased attention because of its potential for a wide variety of high temperature, high power, high frequency, and/or radiation hardened applications under which conventional semiconductors cannot adequately perform.
Sima Dimitrijev, Philippe Jamet
openaire +2 more sources