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Active Switching with SiC MOSFETs
2019 IEEE Energy Conversion Congress and Exposition (ECCE), 2019The work in this paper presents a methodology to overcome the coupled nature of dv/dt and di/dt to gate drive resistance and stray commutation inductance for a SiC MOSFET. The SiC MOSFET exhibits almost ideal switching behavior, corresponding closely to the simplified device equations.
Patrick Palmer +2 more
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Materials Science Forum, 2016
This paper introduces n-channel normally-off Trench-MOSFETs on 4H-SiC featuring a blocking voltage of 600 V and 1200 V. The Trench-MOSFETs exhibit a specific room temperature on-state resistance RDS,on of 1.5 mΩ cm² and 2.7 mΩ cm², respectively. It is shown that a further reduction of the RDS,on by approximately 25 % can be achieved using square-shaped
Christian T. Banzhaf +4 more
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This paper introduces n-channel normally-off Trench-MOSFETs on 4H-SiC featuring a blocking voltage of 600 V and 1200 V. The Trench-MOSFETs exhibit a specific room temperature on-state resistance RDS,on of 1.5 mΩ cm² and 2.7 mΩ cm², respectively. It is shown that a further reduction of the RDS,on by approximately 25 % can be achieved using square-shaped
Christian T. Banzhaf +4 more
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On the subthreshold measurements of SIC MOSFETs
2008 IEEE International Conference on Semiconductor Electronics, 2008Reported here are subthreshold measurements on n-channel 6H-SiC MOSFETs over a range of temperatures. A simple theoretical model is presented to explain their general form. It is shown that the temperature dependence of the subthreshold current indicates a high density of electronic states at or near the SiC-SiO2 interface.
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Fabrication and evaluation of SiC inverter using SiC-MOSFET
2013 IEEE 10th International Conference on Power Electronics and Drive Systems (PEDS), 2013This paper deals with device characteristics of SiC-MOSFET (600 V, 10 A) and efficiency characteristics of SiC inverter when the motor is driven as compared respectively with Si-MOSFET and Si inverter. As a result, it was found that on-resistance of SiC-MOSFET is smaller than that of Si-MOSFET, and switching loss of SiC-MOSEFET is approximately 1/3 ...
A. Yamane +4 more
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Comparison of 3C-SiC and 4H-SiC Power MOSFETs
Materials Science Forum, 2018A comprehensive comparison of 3C-SiC and 4H-SiC power MOSFETs was performed, aimed at quantifying and comparing the devices’ on-resistance and switching loss. To this end, the relevant material parameters were collected using experimental data where available, or those obtained by simulation.
Bart J. Van Zeghbroeck, Hamid Fardi
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Dynamic On-State Resistance in SiC MOSFETs
2023 IEEE International Reliability Physics Symposium (IRPS), 2023Ronald Green +4 more
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Reliability studies of SiC vertical power MOSFETs
2018 IEEE International Reliability Physics Symposium (IRPS), 2018Power metal-oxide-semiconductor field-effect transistors (MOSFETs) experience conditions of high field during normal operation, with high MOS gate oxide field in the on-state, and high drift and termination fields in the blocking state. Moreover, silicon carbide devices typically experience higher fields than comparable Si devices due to channel and ...
Daniel J. Lichtenwalner +9 more
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A non-segmented PSpice model of SiC MOSFETs
IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society, 2017To solve the simulation convergence problem of Silicon Carbide metal-oxide semiconductor field effect transistor (SiC MOSFET) models, this paper proposes a non-segmented model for SiC MOSFETs, which uses non-segmented, smooth continuous equations to describe the static and dynamic characteristics of SiC MOSFET. Further, the static characteristic of SiC
Hong Li 0002 +3 more
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Thermal instability effects in SiC Power MOSFETs
Microelectronics Reliability, 2012Abstract Silicon carbide (SiC) power MOSFETs are characterised by potentially thermally unstable behaviour over a broad range of bias conditions. In the past, such behaviour has been shown for silicon (Si) MOSFETs to be related to a reduction of Safe Operating Area at higher drain–source bias voltages.
Alberto Castellazzi +3 more
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Developments of SiC DioMOS (Diode Integrated SiC MOSFET)
MRS Proceedings, 2014ABSTRACTSiC power devices can handle large power and high frequency switching beyond the Si power devices. Typical full-SiC power modules are composed of both SiC-MOSFETs and SiC-SBDs to suppress the degradation of Ron of SiC-MOSFET during the bipolar reverse-current flow while there will be unfavorable consequences such as increased material cost ...
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