Results 181 to 190 of about 225,573 (220)
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IEEE Electron Device Letters, 1986
Cubic-SiC (3C-SiC) MOSFET's were successfully fabricated for the first time on a 3C-SiC film heteroepitaxially grown on an Si substrate. The device showed acceptable static characteristics. A novel device structure was devised, which enabled the use of conventional equipment for silicon devices, and eliminated dedicated processes for a stable and rigid
Y. Kondo +8 more
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Cubic-SiC (3C-SiC) MOSFET's were successfully fabricated for the first time on a 3C-SiC film heteroepitaxially grown on an Si substrate. The device showed acceptable static characteristics. A novel device structure was devised, which enabled the use of conventional equipment for silicon devices, and eliminated dedicated processes for a stable and rigid
Y. Kondo +8 more
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Materials Science Forum, 2012
Significant advancement has been made in the gate oxide reliability of SiC MOS devices to enable the commercial release of Cree’s Z-FET™ product. This paper discusses the key reliability results from Time-Dependent-Dielectric-Breakdown (TDDB) and High Temperature Gate Bias (HTGB) measurements that indicate that the SiC MOSFETs can demonstrate excellent
Mrinal K. Das +5 more
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Significant advancement has been made in the gate oxide reliability of SiC MOS devices to enable the commercial release of Cree’s Z-FET™ product. This paper discusses the key reliability results from Time-Dependent-Dielectric-Breakdown (TDDB) and High Temperature Gate Bias (HTGB) measurements that indicate that the SiC MOSFETs can demonstrate excellent
Mrinal K. Das +5 more
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Materials Science Forum, 2016
This paper introduces n-channel normally-off Trench-MOSFETs on 4H-SiC featuring a blocking voltage of 600 V and 1200 V. The Trench-MOSFETs exhibit a specific room temperature on-state resistance RDS,on of 1.5 mΩ cm² and 2.7 mΩ cm², respectively. It is shown that a further reduction of the RDS,on by approximately 25 % can be achieved using square-shaped
Christian T. Banzhaf +4 more
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This paper introduces n-channel normally-off Trench-MOSFETs on 4H-SiC featuring a blocking voltage of 600 V and 1200 V. The Trench-MOSFETs exhibit a specific room temperature on-state resistance RDS,on of 1.5 mΩ cm² and 2.7 mΩ cm², respectively. It is shown that a further reduction of the RDS,on by approximately 25 % can be achieved using square-shaped
Christian T. Banzhaf +4 more
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Comparison of 3C-SiC and 4H-SiC Power MOSFETs
Materials Science Forum, 2018A comprehensive comparison of 3C-SiC and 4H-SiC power MOSFETs was performed, aimed at quantifying and comparing the devices’ on-resistance and switching loss. To this end, the relevant material parameters were collected using experimental data where available, or those obtained by simulation.
Bart J. Van Zeghbroeck, Hamid Fardi
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Fabrication and evaluation of SiC inverter using SiC-MOSFET
2013 IEEE 10th International Conference on Power Electronics and Drive Systems (PEDS), 2013This paper deals with device characteristics of SiC-MOSFET (600 V, 10 A) and efficiency characteristics of SiC inverter when the motor is driven as compared respectively with Si-MOSFET and Si inverter. As a result, it was found that on-resistance of SiC-MOSFET is smaller than that of Si-MOSFET, and switching loss of SiC-MOSEFET is approximately 1/3 ...
A. Yamane +4 more
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On the subthreshold measurements of SIC MOSFETs
2008 IEEE International Conference on Semiconductor Electronics, 2008Reported here are subthreshold measurements on n-channel 6H-SiC MOSFETs over a range of temperatures. A simple theoretical model is presented to explain their general form. It is shown that the temperature dependence of the subthreshold current indicates a high density of electronic states at or near the SiC-SiO2 interface.
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Reliability studies of SiC vertical power MOSFETs
2018 IEEE International Reliability Physics Symposium (IRPS), 2018Power metal-oxide-semiconductor field-effect transistors (MOSFETs) experience conditions of high field during normal operation, with high MOS gate oxide field in the on-state, and high drift and termination fields in the blocking state. Moreover, silicon carbide devices typically experience higher fields than comparable Si devices due to channel and ...
Daniel J. Lichtenwalner +9 more
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A non-segmented PSpice model of SiC MOSFETs
IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society, 2017To solve the simulation convergence problem of Silicon Carbide metal-oxide semiconductor field effect transistor (SiC MOSFET) models, this paper proposes a non-segmented model for SiC MOSFETs, which uses non-segmented, smooth continuous equations to describe the static and dynamic characteristics of SiC MOSFET. Further, the static characteristic of SiC
Hong Li 0002 +3 more
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Dynamic On-State Resistance in SiC MOSFETs
2023 IEEE International Reliability Physics Symposium (IRPS), 2023Ronald Green +4 more
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2010
In the previous chapters, it was demonstrated that the maximum operating frequency of high voltage bipolar silicon power devices is limited by the power dissipation due to their slow switching transients. The rate of rise of the voltage and rate of fall of the current during the turn-off process in these devices is slowed down by the presence of the ...
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In the previous chapters, it was demonstrated that the maximum operating frequency of high voltage bipolar silicon power devices is limited by the power dissipation due to their slow switching transients. The rate of rise of the voltage and rate of fall of the current during the turn-off process in these devices is slowed down by the presence of the ...
openaire +1 more source