Results 171 to 180 of about 21,181 (269)

The Study for Extending EV Charger Lifetime by Advanced SiC Power MOSFET Packaging Technology

Kwok Wai, Dinesh Palaniappan, Simon Kim
openalex   +1 more source

Review of Prognosis Approaches Applied to Power SiC MOSFETs for Health State and Remaining Useful Life Prediction. [PDF]

Entropy (Basel)
Kumar S, Allard B, Hologne-Carpentier M, Clerc G, Auger F.   +4 more
europepmc   +1 more source

Interpreting artificial neural network-based modeling of 4 H-SiC mosfets using explainable AI [PDF]

Yu‐Sheng Hsiao, Pei-Jie Chang, Bang-Ren Chen, Rushat Rai, Shivendra Singh, Yogesh Singh Chauhan, Wen‐Jay Lee, Nan-Yow Chen, Tian‐Li Wu   +8 more
openalex   +1 more source

EDS COMPOUND SEMICONDUCTOR DEVICESAND CIRCUITS TECHNICAL COMMITTEE [PDF]

, 2010
Ghione, Giovanni
core  

A Si/SiC Heterojunction Double-Trench MOSFET with Improved Conduction Characteristics. [PDF]

Micromachines (Basel)
Kang Y, Liu D, Li T, Qiu Z, Lu S, Hu X.
europepmc   +1 more source

Heterogeneous integration of ultrawide bandgap semiconductors for radio frequency power devices. [PDF]

Sci Adv
Zhou H, Zhou M, Xiang M, Gong H, Gao G, Wang C, Zhang Y, Dang K, Liu Z, Zhang J, Zhang H, Wang Y, Wang H, Si M, Zhang Y, Hao Y, Zhang J.   +16 more
europepmc   +1 more source

Applicability Analysis of High-Voltage Transmission and Substation Equipment Based on Silicon Carbide Devices. [PDF]

Micromachines (Basel)
Zhang H, Nie M, Dong Q, Liu H, Jia P, Li Z, Fang Y.   +6 more
europepmc   +1 more source

Advances and Perspectives in Gate Dielectric Thin Films for 4H-SiC MOSFETs. [PDF]

Materials (Basel)
Bai Z, Liang J, Ding C, Zhou Z, Luo M, Gu L, Ma HP, Zhang QC.   +7 more
europepmc   +1 more source

For electrified aircraft propulsion, SiC MOSFET inverter design with power redundancy in both escape event and failure

Simon Kim, Infineon Technologies Korea, System application engineer team, Seoul Korea, Dong‐Hyun Lee, Byunggil Kwak, Myeonghyo Kim, Hanwha Systems, Power control team, YoungIn, Korea   +5 more
openalex   +1 more source

‘ig,vgs’ Monitoring for Fast and Robust SiC MOSFET Short-Circuit Protection with High integration Capability

, 2020
Yazan Barazi, François Boige, Nicolas Rouger, Jean‐Marc Blaquière, Frédéric Richardeau   +4 more
openalex   +2 more sources