Results 171 to 180 of about 225,573 (220)

Analytical PSpice model for SiC MOSFET based high power modules

Microelectronics Journal, 2016
A simple analytical PSpice model has been developed and verified for a 4H–SiC based MOSFET power module with voltage and current ratings of 1200 V and 120 A.
Daniel Johannesson
exaly   +2 more sources

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SiC MOSFETs

2020
Modern switching components for energy processing widely consist of active semiconductor devices in Si, a mature and well-established technology that is reaching its physical limits. The main limitations of Si concern the blocking voltage capability, the switching frequency, and the operating temperature.
Maresca L., Borghese A., Romano G., Fayyaz A., Riccio M., Breglio G., Castellazzi A., Irace A.   +7 more
openaire   +2 more sources

SiC Integrated MOSFETs

physica status solidi (a), 1997
A new design and processing concepts have been applied to develop practical SiC trench MOSFETs for high power applications. The designed trench MOSFET has a MOS structure consisting of epitaxially grown n-type SiC trench sidewall layers. The current flows via an accumulation mode through the channel defined in the epitaxially grown SiC sidewall layer ...
S. Onda, R. Kumar, K. Hara
openaire   +1 more source

A simple SiC power MOSFET model

IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society, 2017
With the application of SiC power metal-oxide-semiconductor field-effect transistor (MOSFET) in high voltage power converters, switching frequency and speed increase. Thus, severe electromagnetic interference(EMI) problems occur. To predict EMI performances and evaluate other performances in the design phase, a simple and valid switch model is needed ...
Zhuolin Duan, Dong Zhang, Tao Fan, Xuhui Wen   +3 more
openaire   +1 more source

Advances in SiC power MOSFET technology

Microelectronics Reliability, 2003
Abstract In recent years, SiC has received increased attention because of its potential for a wide variety of high temperature, high power, high frequency, and/or radiation hardened applications under which conventional semiconductors cannot adequately perform.
Sima Dimitrijev, Philippe Jamet
openaire   +2 more sources

The direct series connection of SiC MOSFETs

IECON 2016 - 42nd Annual Conference of the IEEE Industrial Electronics Society, 2016
Silicon Carbide (SiC) MOSFETs offer high speed switching for power applications at high blocking voltage ratings, e.g. 1.2 kV, 3.3kV and more in the future. Connecting SiC MOSFETs in series is of interest to achieve AC distribution voltage levels.
Patrick R. Palmer, Xueqiang Zhang, Jin Zhang   +2 more
openaire   +2 more sources

Robustness of 1.2kV SiC MOSFET devices

Microelectronics Reliability, 2013
This paper provides an evaluation of robustness and performances of two types of 1.2 kV SiC MOSFETs in order to investigate these power devices for aircraft applications in medium power range. The paper focuses on robustness results showing the weakness of the gate under short-circuit tests.
Dhouha, Othman, Lefebvre, Stéphane, Berkani, Mounira, Khatir, Zoubir, Ibrahim, Ali, Bouzourene, Arezki   +5 more
openaire   +4 more sources

Combination of a 4H-SiC MESFET with a 4H-SiC MOSFET to realize a high voltage MOSFET

2011 International Conference on Signal Processing, Communication, Computing and Networking Technologies, 2011
In this paper we propose for the first time a novel 4H-SiC MOSFET in order to increase breakdown voltage. Key idea in this work is to utilize better reduced surface field (RESURF) by combination the good features of a buried gate MESFET with a conventional MOSFET. Therefore proposed structure is called MES-MOSFET structure.
null Hamid Amini Moghadam, S. E. Jamali Mahabadi, Saba Rajabi   +2 more
openaire   +1 more source

A Temperature-Dependent Analytical Transient Model of SiC MOSFET in Half-Bridge Circuits [PDF]

IEEE Transactions on Power Electronics
In this paper, a temperature-dependent transient model of silicon carbide (SiC) metal-oxide-semiconductor fieldeffect transistor (MOSFET) is proposed. The switching transient of the SiC MOSFET is divided into 4 phases.
Peng Xue, Pooya Davari
exaly   +2 more sources

Active Switching with SiC MOSFETs

2019 IEEE Energy Conversion Congress and Exposition (ECCE), 2019
The work in this paper presents a methodology to overcome the coupled nature of dv/dt and di/dt to gate drive resistance and stray commutation inductance for a SiC MOSFET. The SiC MOSFET exhibits almost ideal switching behavior, corresponding closely to the simplified device equations.
Patrick Palmer, Jin Zhang, Edward Shelton   +2 more
openaire   +1 more source