Results 171 to 180 of about 4,517 (219)
Analytical PSpice model for SiC MOSFET based high power modules
Microelectronics Journal, 2016 A simple analytical PSpice model has been developed and verified for a 4H–SiC based MOSFET power module with voltage and current ratings of 1200 V and 120 A.
Daniel Johannesson
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2020
Modern switching components for energy processing widely consist of active semiconductor devices in Si, a mature and well-established technology that is reaching its physical limits. The main limitations of Si concern the blocking voltage capability, the switching frequency, and the operating temperature.
Maresca L. +7 more
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Modern switching components for energy processing widely consist of active semiconductor devices in Si, a mature and well-established technology that is reaching its physical limits. The main limitations of Si concern the blocking voltage capability, the switching frequency, and the operating temperature.
Maresca L. +7 more
openaire +2 more sources
A simple SiC power MOSFET model
IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society, 2017With the application of SiC power metal-oxide-semiconductor field-effect transistor (MOSFET) in high voltage power converters, switching frequency and speed increase. Thus, severe electromagnetic interference(EMI) problems occur. To predict EMI performances and evaluate other performances in the design phase, a simple and valid switch model is needed ...
Zhuolin Duan +3 more
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physica status solidi (a), 1997
A new design and processing concepts have been applied to develop practical SiC trench MOSFETs for high power applications. The designed trench MOSFET has a MOS structure consisting of epitaxially grown n-type SiC trench sidewall layers. The current flows via an accumulation mode through the channel defined in the epitaxially grown SiC sidewall layer ...
S. Onda, R. Kumar, K. Hara
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A new design and processing concepts have been applied to develop practical SiC trench MOSFETs for high power applications. The designed trench MOSFET has a MOS structure consisting of epitaxially grown n-type SiC trench sidewall layers. The current flows via an accumulation mode through the channel defined in the epitaxially grown SiC sidewall layer ...
S. Onda, R. Kumar, K. Hara
openaire +1 more source
The direct series connection of SiC MOSFETs
IECON 2016 - 42nd Annual Conference of the IEEE Industrial Electronics Society, 2016Silicon Carbide (SiC) MOSFETs offer high speed switching for power applications at high blocking voltage ratings, e.g. 1.2 kV, 3.3kV and more in the future. Connecting SiC MOSFETs in series is of interest to achieve AC distribution voltage levels.
Patrick R. Palmer +2 more
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A Temperature-Dependent Analytical Transient Model of SiC MOSFET in Half-Bridge Circuits [PDF]
IEEE Transactions on Power ElectronicsIn this paper, a temperature-dependent transient model of silicon carbide (SiC) metal-oxide-semiconductor fieldeffect transistor (MOSFET) is proposed. The switching transient of the SiC MOSFET is divided into 4 phases.
Peng Xue, Pooya Davari
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Robustness of 1.2kV SiC MOSFET devices
Microelectronics Reliability, 2013This paper provides an evaluation of robustness and performances of two types of 1.2 kV SiC MOSFETs in order to investigate these power devices for aircraft applications in medium power range. The paper focuses on robustness results showing the weakness of the gate under short-circuit tests.
Dhouha, Othman +5 more
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Materials Science Forum, 2012
Significant advancement has been made in the gate oxide reliability of SiC MOS devices to enable the commercial release of Cree’s Z-FET™ product. This paper discusses the key reliability results from Time-Dependent-Dielectric-Breakdown (TDDB) and High Temperature Gate Bias (HTGB) measurements that indicate that the SiC MOSFETs can demonstrate excellent
Mrinal K. Das +5 more
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Significant advancement has been made in the gate oxide reliability of SiC MOS devices to enable the commercial release of Cree’s Z-FET™ product. This paper discusses the key reliability results from Time-Dependent-Dielectric-Breakdown (TDDB) and High Temperature Gate Bias (HTGB) measurements that indicate that the SiC MOSFETs can demonstrate excellent
Mrinal K. Das +5 more
openaire +1 more source
IEEE Electron Device Letters, 1986
Cubic-SiC (3C-SiC) MOSFET's were successfully fabricated for the first time on a 3C-SiC film heteroepitaxially grown on an Si substrate. The device showed acceptable static characteristics. A novel device structure was devised, which enabled the use of conventional equipment for silicon devices, and eliminated dedicated processes for a stable and rigid
Y. Kondo +8 more
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Cubic-SiC (3C-SiC) MOSFET's were successfully fabricated for the first time on a 3C-SiC film heteroepitaxially grown on an Si substrate. The device showed acceptable static characteristics. A novel device structure was devised, which enabled the use of conventional equipment for silicon devices, and eliminated dedicated processes for a stable and rigid
Y. Kondo +8 more
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Combination of a 4H-SiC MESFET with a 4H-SiC MOSFET to realize a high voltage MOSFET
2011 International Conference on Signal Processing, Communication, Computing and Networking Technologies, 2011In this paper we propose for the first time a novel 4H-SiC MOSFET in order to increase breakdown voltage. Key idea in this work is to utilize better reduced surface field (RESURF) by combination the good features of a buried gate MESFET with a conventional MOSFET. Therefore proposed structure is called MES-MOSFET structure.
null Hamid Amini Moghadam +2 more
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