Switching Loss Model for SiC MOSFETs Based on Datasheet Parameters Enabling Virtual Junction Temperature Estimation. [PDF]
Sensors (Basel)Bianchini C +3 more
europepmc +1 more source
Grey Box Identification of SiC MOSFET Modules in Short Circuit
Jorge Mari, Michael Kirner
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SiC Double-Trench MOSFETs with an Integrated MOS-Channel Diode for Improved Third-Quadrant Performance. [PDF]
Micromachines (Basel)Wang Z +7 more
europepmc +1 more source
TID Effects in Vertical SiC Power MOSFETs Irradiated at Different Temperatures
Gabriele Andreetta +8 more
openalex +2 more sources
Research on the Short-Circuit Characteristics of Trench-Type SiC Power MOSFETs Under Single and Repetitive Pulse Strikes. [PDF]
Micromachines (Basel)Liu L, Pang B, Li S, Zhen Y, Li G.
europepmc +1 more source
Performance enhancement of 4H-SiC superjunction trench MOSFET with extended high-K dielectric
Jiafei Yao +9 more
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High Voltage Flyback Converter for Safety Indicators in Electrical Testing Laboratories. [PDF]
Sensors (Basel)Drăgoi AD, Lica S, Lie I, Popescu MV.
europepmc +1 more source
Encapsulation Process and Dynamic Characterization of SiC Half-Bridge Power Module: Electro-Thermal Co-Design and Experimental Validation. [PDF]
Micromachines (Basel)Cai K, Xiao J, Su X, Tang Q, Deng H.
europepmc +1 more source
Design and Fabrication of RESURF MOSFETs on 4H-SiC(0001), (1120), and 6H-SiC(0001)
, 2005 Kimoto, T +4 more
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