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Reliability and stability of SiC power mosfets and next-generation SiC MOSFETs
2014 IEEE Workshop on Wide Bandgap Power Devices and Applications, 2014B. Hull +13 more
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2010
In the previous chapters, it was demonstrated that the maximum operating frequency of high voltage bipolar silicon power devices is limited by the power dissipation due to their slow switching transients. The rate of rise of the voltage and rate of fall of the current during the turn-off process in these devices is slowed down by the presence of the ...
openaire +1 more source
In the previous chapters, it was demonstrated that the maximum operating frequency of high voltage bipolar silicon power devices is limited by the power dissipation due to their slow switching transients. The rate of rise of the voltage and rate of fall of the current during the turn-off process in these devices is slowed down by the presence of the ...
openaire +1 more source
Comparative Study on Reliability of Conventional SiC MOSFET and JBS Integrated SiC MOSFET
2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)Moufu Kong +5 more
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Investigation on Degradation of SiC MOSFET Under Surge Current Stress of Body Diode
IEEE Journal of Emerging and Selected Topics in Power Electronics, 2020Xi Jiang, Jun Wang, Zongjian Li
exaly
SiC power MOSFETs and their application
2021Alberto Castellazzi, Andrea Irace
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Performance Improvement and Reliability Physics in SiC MOSFETs
2022 IEEE International Reliability Physics Symposium (IRPS), 2022Tsunenobu Kimoto +3 more
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Failure modes and mechanism analysis of SiC MOSFET under short-circuit conditions
Microelectronics Reliability, 2018Xi Jiang, Jun Wang, Jiwu Lu
exaly