Results 211 to 220 of about 21,181 (269)

Influence of Electrical Transients and A/D Converter Dynamics on Thermal Resistance Measurements of Power MOSFETs. [PDF]

Sensors (Basel)
Górecki K, Posobkiewicz K.
europepmc   +1 more source

A Novel 4H-SiC SGT MOSFET with Improved P+ Shielding Region and Integrated Schottky Barrier Diode. [PDF]

Micromachines (Basel)
Cao X, Liu J, An Y, Ren X, Yin Z.
europepmc   +1 more source

Test Methodology for Short-Circuit Assessment and Safe Operation Identification for Power SiC MOSFETs

Joao Oliveira, Jean-Michel Reynès, Hervé Morel, P. Frey, Olivier Perrotin, Laurence Allirand, Stéphane Azzopardi, Michel Piton, Fabio Coccetti   +8 more
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Demonstration of accurate ID-VG characteristics modeling in SiC mosfets using separated artificial neural networks with small training dataset. [PDF]

Sci Rep
Chankla M, Chen BR, Singh SK, Chauhan YS, Lee WJ, Chen NY, Kanjanachuchai S, Wu TL.   +7 more
europepmc   +1 more source

Silicon-on-Insulator (SOI) Lateral Power-Reduced Surface Field FinFET with High-Power Figure of Merit of 239.3 MW/cm². [PDF]

Micromachines (Basel)
Song CW, Lee T, Kim D, Kyoung S, Woo S.
europepmc   +1 more source

Short-Circuit Performance Analysis of Commercial 1.7 kV SiC MOSFETs Under Varying Electrical Stress. [PDF]

Micromachines (Basel)
Makhdoom S, Ren N, Wang C, Wu Y, Xu H, Wang J, Sheng K.   +6 more
europepmc   +1 more source

Extremely Low Thermal Resistance of β-Ga₂O₃ MOSFETs by Co-integrated Design of Substrate Engineering and Device Packaging. [PDF]

ACS Appl Mater Interfaces
Qu Z, Xie Y, Zhao T, Xu W, He Y, Xu Y, Sun H, You T, Han G, Hao Y, Ou X.   +10 more
europepmc   +1 more source

Recent Progress in SiC-MOSFET

Recent Progress in SiC-MOSFET
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SiC MOSFETs

2020
Modern switching components for energy processing widely consist of active semiconductor devices in Si, a mature and well-established technology that is reaching its physical limits. The main limitations of Si concern the blocking voltage capability, the switching frequency, and the operating temperature.
Maresca L., Borghese A., Romano G., Fayyaz A., Riccio M., Breglio G., Castellazzi A., Irace A.   +7 more
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A simple SiC power MOSFET model

IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society, 2017
With the application of SiC power metal-oxide-semiconductor field-effect transistor (MOSFET) in high voltage power converters, switching frequency and speed increase. Thus, severe electromagnetic interference(EMI) problems occur. To predict EMI performances and evaluate other performances in the design phase, a simple and valid switch model is needed ...
Zhuolin Duan, Dong Zhang, Tao Fan, Xuhui Wen   +3 more
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