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A Novel 1.2 kV 4H-SiC Buffered-Gate (BG) MOSFET: Analysis and Experimental Results
IEEE Electron Device Letters, 2018Jay Baliga, Kijeong Han, Woongje Sung
exaly
Split-Gate 1.2-kV 4H-SiC MOSFET: Analysis and Experimental Validation
IEEE Electron Device Letters, 2017Kijeong Han, Woongje Sung
exaly
A Fast Overcurrent Protection IC for SiC MOSFET Based on Current Detection
IEEE Transactions on Power ElectronicsWei Xiang, Yuan Yang, Wen Yang
exaly
Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules
IEEE Transactions on Power Electronics, 2019Congcong Shi, Jiahang Zhang, Xiaojie Wu
exaly
On the Intrinsic and Extrinsic Reliability Challenges of SiC MOSFETs
2024 IEEE International Reliability Physics Symposium (IRPS)Peter Moens +4 more
openaire +1 more source