Results 221 to 230 of about 21,181 (269)
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physica status solidi (a), 1997
A new design and processing concepts have been applied to develop practical SiC trench MOSFETs for high power applications. The designed trench MOSFET has a MOS structure consisting of epitaxially grown n-type SiC trench sidewall layers. The current flows via an accumulation mode through the channel defined in the epitaxially grown SiC sidewall layer ...
S. Onda, R. Kumar, K. Hara
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A new design and processing concepts have been applied to develop practical SiC trench MOSFETs for high power applications. The designed trench MOSFET has a MOS structure consisting of epitaxially grown n-type SiC trench sidewall layers. The current flows via an accumulation mode through the channel defined in the epitaxially grown SiC sidewall layer ...
S. Onda, R. Kumar, K. Hara
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Advances in SiC power MOSFET technology
Microelectronics Reliability, 2003Abstract In recent years, SiC has received increased attention because of its potential for a wide variety of high temperature, high power, high frequency, and/or radiation hardened applications under which conventional semiconductors cannot adequately perform.
Sima Dimitrijev, Philippe Jamet
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The direct series connection of SiC MOSFETs
IECON 2016 - 42nd Annual Conference of the IEEE Industrial Electronics Society, 2016Silicon Carbide (SiC) MOSFETs offer high speed switching for power applications at high blocking voltage ratings, e.g. 1.2 kV, 3.3kV and more in the future. Connecting SiC MOSFETs in series is of interest to achieve AC distribution voltage levels.
Patrick R. Palmer +2 more
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Robustness of 1.2kV SiC MOSFET devices
Microelectronics Reliability, 2013This paper provides an evaluation of robustness and performances of two types of 1.2 kV SiC MOSFETs in order to investigate these power devices for aircraft applications in medium power range. The paper focuses on robustness results showing the weakness of the gate under short-circuit tests.
Dhouha, Othman +5 more
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Materials Science Forum, 2012
Significant advancement has been made in the gate oxide reliability of SiC MOS devices to enable the commercial release of Cree’s Z-FET™ product. This paper discusses the key reliability results from Time-Dependent-Dielectric-Breakdown (TDDB) and High Temperature Gate Bias (HTGB) measurements that indicate that the SiC MOSFETs can demonstrate excellent
Mrinal K. Das +5 more
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Significant advancement has been made in the gate oxide reliability of SiC MOS devices to enable the commercial release of Cree’s Z-FET™ product. This paper discusses the key reliability results from Time-Dependent-Dielectric-Breakdown (TDDB) and High Temperature Gate Bias (HTGB) measurements that indicate that the SiC MOSFETs can demonstrate excellent
Mrinal K. Das +5 more
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IEEE Electron Device Letters, 1986
Cubic-SiC (3C-SiC) MOSFET's were successfully fabricated for the first time on a 3C-SiC film heteroepitaxially grown on an Si substrate. The device showed acceptable static characteristics. A novel device structure was devised, which enabled the use of conventional equipment for silicon devices, and eliminated dedicated processes for a stable and rigid
Y. Kondo +8 more
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Cubic-SiC (3C-SiC) MOSFET's were successfully fabricated for the first time on a 3C-SiC film heteroepitaxially grown on an Si substrate. The device showed acceptable static characteristics. A novel device structure was devised, which enabled the use of conventional equipment for silicon devices, and eliminated dedicated processes for a stable and rigid
Y. Kondo +8 more
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Active Switching with SiC MOSFETs
2019 IEEE Energy Conversion Congress and Exposition (ECCE), 2019The work in this paper presents a methodology to overcome the coupled nature of dv/dt and di/dt to gate drive resistance and stray commutation inductance for a SiC MOSFET. The SiC MOSFET exhibits almost ideal switching behavior, corresponding closely to the simplified device equations.
Patrick Palmer +2 more
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Materials Science Forum, 2016
This paper introduces n-channel normally-off Trench-MOSFETs on 4H-SiC featuring a blocking voltage of 600 V and 1200 V. The Trench-MOSFETs exhibit a specific room temperature on-state resistance RDS,on of 1.5 mΩ cm² and 2.7 mΩ cm², respectively. It is shown that a further reduction of the RDS,on by approximately 25 % can be achieved using square-shaped
Christian T. Banzhaf +4 more
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This paper introduces n-channel normally-off Trench-MOSFETs on 4H-SiC featuring a blocking voltage of 600 V and 1200 V. The Trench-MOSFETs exhibit a specific room temperature on-state resistance RDS,on of 1.5 mΩ cm² and 2.7 mΩ cm², respectively. It is shown that a further reduction of the RDS,on by approximately 25 % can be achieved using square-shaped
Christian T. Banzhaf +4 more
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Combination of a 4H-SiC MESFET with a 4H-SiC MOSFET to realize a high voltage MOSFET
2011 International Conference on Signal Processing, Communication, Computing and Networking Technologies, 2011In this paper we propose for the first time a novel 4H-SiC MOSFET in order to increase breakdown voltage. Key idea in this work is to utilize better reduced surface field (RESURF) by combination the good features of a buried gate MESFET with a conventional MOSFET. Therefore proposed structure is called MES-MOSFET structure.
null Hamid Amini Moghadam +2 more
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On the subthreshold measurements of SIC MOSFETs
2008 IEEE International Conference on Semiconductor Electronics, 2008Reported here are subthreshold measurements on n-channel 6H-SiC MOSFETs over a range of temperatures. A simple theoretical model is presented to explain their general form. It is shown that the temperature dependence of the subthreshold current indicates a high density of electronic states at or near the SiC-SiO2 interface.
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