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Fabrication and evaluation of SiC inverter using SiC-MOSFET
2013 IEEE 10th International Conference on Power Electronics and Drive Systems (PEDS), 2013This paper deals with device characteristics of SiC-MOSFET (600 V, 10 A) and efficiency characteristics of SiC inverter when the motor is driven as compared respectively with Si-MOSFET and Si inverter. As a result, it was found that on-resistance of SiC-MOSFET is smaller than that of Si-MOSFET, and switching loss of SiC-MOSEFET is approximately 1/3 ...
A. Yamane +4 more
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Comparison of 3C-SiC and 4H-SiC Power MOSFETs
Materials Science Forum, 2018A comprehensive comparison of 3C-SiC and 4H-SiC power MOSFETs was performed, aimed at quantifying and comparing the devices’ on-resistance and switching loss. To this end, the relevant material parameters were collected using experimental data where available, or those obtained by simulation.
Bart J. Van Zeghbroeck, Hamid Fardi
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Thermal instability effects in SiC Power MOSFETs
Microelectronics Reliability, 2012Abstract Silicon carbide (SiC) power MOSFETs are characterised by potentially thermally unstable behaviour over a broad range of bias conditions. In the past, such behaviour has been shown for silicon (Si) MOSFETs to be related to a reduction of Safe Operating Area at higher drain–source bias voltages.
Alberto Castellazzi +3 more
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Dynamic On-State Resistance in SiC MOSFETs
2023 IEEE International Reliability Physics Symposium (IRPS), 2023Ronald Green +4 more
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Reliability of Commercially Available SiC Power Mosfets
ECS Meeting Abstracts, 2014With the introduction of SiC power MOSFETs into the commercial market place, it is critically important to determine the reliability of these devices. A number of potential issues need to be addressed, including the stability of the device threshold voltage, and the reliability of both the body diode and the gate oxide.
Aivars Lelis +3 more
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The effects of radiation on the terrestrial operation of SiC MOSFETs
2018 IEEE International Reliability Physics Symposium (IRPS), 2018Terrestrial neutron induced reliability concerns are quantified for silicon carbide (SiC) power MOSFETs and silicon carbide power diodes using the terrestrial neutron simulator at Los Alamos Neutron Science Center. The experiments are used to determine failure in time (FIT) curves for these SiC power devices, and compare their curves with those of ...
Akin Akturk +6 more
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Reliability studies of SiC vertical power MOSFETs
2018 IEEE International Reliability Physics Symposium (IRPS), 2018Power metal-oxide-semiconductor field-effect transistors (MOSFETs) experience conditions of high field during normal operation, with high MOS gate oxide field in the on-state, and high drift and termination fields in the blocking state. Moreover, silicon carbide devices typically experience higher fields than comparable Si devices due to channel and ...
Daniel J. Lichtenwalner +9 more
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Developments of SiC DioMOS (Diode Integrated SiC MOSFET)
MRS Proceedings, 2014ABSTRACTSiC power devices can handle large power and high frequency switching beyond the Si power devices. Typical full-SiC power modules are composed of both SiC-MOSFETs and SiC-SBDs to suppress the degradation of Ron of SiC-MOSFET during the bipolar reverse-current flow while there will be unfavorable consequences such as increased material cost ...
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Reliability and stability of SiC power mosfets and next-generation SiC MOSFETs
2014 IEEE Workshop on Wide Bandgap Power Devices and Applications, 2014B. Hull +13 more
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2010
In the previous chapters, it was demonstrated that the maximum operating frequency of high voltage bipolar silicon power devices is limited by the power dissipation due to their slow switching transients. The rate of rise of the voltage and rate of fall of the current during the turn-off process in these devices is slowed down by the presence of the ...
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In the previous chapters, it was demonstrated that the maximum operating frequency of high voltage bipolar silicon power devices is limited by the power dissipation due to their slow switching transients. The rate of rise of the voltage and rate of fall of the current during the turn-off process in these devices is slowed down by the presence of the ...
openaire +1 more source