Results 111 to 120 of about 21,181 (269)

Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs [PDF]

, 2020
C. Martinella, Thomas Ziemann, Roger Stark, Alexander Tsibizov, Kay‐Obbe Voss, Rubén García Alía, Yacine Kadi, Ulrike Großner, Arto Javanainen   +8 more
openalex   +1 more source

Gate Driver for SiC MOSFET

Journal of Applied Technology and Innovation
SIC Mosfet plays a huge role in power converters and it works under high voltage, high switching frequencies and high temperatures. SiC MOSFETS are widely used in converters are inverters due to their strength but, when connected in half-bridge configurations, there are positive and negative voltage spikes when switching at high frequencies which ...
Uzair Ahmed, Raed Abdulla, Freddy Tan Kheng   +2 more
openaire   +1 more source

Temperature Characteristics and Junction Temperature Estimation Methods for SiC MOSFET and Si IGBT

Kongzhi Yu Xinxi Jishu, 2016
The output characteristic test circuit, leakage current test circuit and double pulse test circuit were set up to study the effect of temperature characteristics of 1 200 V SiC MOSFET and 1 200 V Si IGBT on output characteristic, leakage current, switch ...
NING Puqi, LI Lei, WEN Xuhui, ZHANG Dong
doaj  

Silicon carbide, a semiconductor for space power electronics [PDF]

After many years of promise as a high temperature semiconductor, silicon carbide (SiC) is finally emerging as a useful electronic material. Recent significant progress that has led to this emergence has been in the areas of crystal growth and device ...
Matus, Lawrence G., Powell, J. Anthony
core   +1 more source

MOSFET parallel-connection of low-voltage MMC for LVDC distribution networks [PDF]

, 2016
A highly efficient DC-AC converter is key to the success of low-voltage DC (LVDC) distribution networks. Calculated power losses in a conventional IGBT 2-level converter, a SiC MOSFET 2-level converter, a Si MOSFET modular multilevel converter (MMC) and ...
Finney, Stephen, Holliday, Derrick, Roscoe, Nina, Zhong, Yanni   +3 more
core  

Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress. [PDF]

Micromachines (Basel), 2023
Qin H, Ba Z, Xie S, Zhang Z, Chen W, Xun Q.   +5 more
europepmc   +1 more source

4H‐SiC trench MOSFET with integrated fast recovery MPS diode [PDF]

, 2017
Tianxiang Dai, C.W. Chan, Xc Deng, Huaping Jiang, Peter Michael Gammon, Mike R. Jennings, Philip Mawby   +6 more
openalex   +1 more source

Design and implementation of a gate driver circuit for three-phase grid tied photovoltaic inverter application [PDF]

, 2018
This paper presents and describes the design and implementation of a new gate driver circuit for a three-phase grid tide photovoltaic inverter system using SIC- MOSFET at the power stage.
Al-Rubaye, Mohannad Jabbar Mnati, Al-yousif, Shahad, Ali, Adnan Hussein, Bozalakov, Dimitar, Van den Bossche, Alex   +4 more
core  

Examining the impacts of DM filters to PFC isolated Ćuk converter for DCM operation by comparing Si and SiC MOSFET. [PDF]

Sci Rep, 2023
Şehirli E.
europepmc   +1 more source

Behavioral Modeling of SiC MOSFET Static and Dynamic Characteristics Based on Particle Swarm Optimization Algorithm

IEEE Access
Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have been widely applied in electronic equipment, owing to the rapidly switching speed and superior thermal performance.
Zhibo Zhu, Yang Zhao, Wei Yan
doaj   +1 more source