Results 111 to 120 of about 4,517 (219)

Behavioral Modeling of SiC MOSFET Static and Dynamic Characteristics Based on Particle Swarm Optimization Algorithm

IEEE Access
Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have been widely applied in electronic equipment, owing to the rapidly switching speed and superior thermal performance.
Zhibo Zhu, Yang Zhao, Wei Yan
doaj   +1 more source

High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy. [PDF]

Nanomaterials (Basel), 2021
Fiorenza P, Alessandrino MS, Carbone B, Russo A, Roccaforte F, Giannazzo F.   +5 more
europepmc   +1 more source

Research on the Techniques of High Power SiC-MOSFET Driver

机车电传动, 2018
In order to adapt to the characteristics of SiC-MOSFET, such as faster switching speed, lower loss but lower threshold voltage and weaker short-circuit capacity compared to Si-IGBT, the key techniques of SiC-MOSFET driver was analyzed, including drain ...
ZHOU Shuai, ZHANG Xiaoyong, RAO Peinan, ZHANG Qing, SHI Hongliang   +4 more
doaj  

Experimental Investigation of SiC MOSFET-Based Isolated Dual Active Half-Bridge Converter: Hard-Switching Versus Soft-Switching

Electrica
: This article presents the performance evaluation of an isolated dual active half-bridge (DAHB) converter with discrete SiC MOSFET devices. The impact of a resonant network on the SiC MOSFET DAHB under two different modes is investigated.
Veera Venkata Subrahmanya Kumar Bhajana, Pravat Biswal, Pavel Drabek, Vijay Kakani   +3 more
doaj   +1 more source

Design and Application of SiC Power MOSFET

, 2003
This thesis focuses on the design of high voltage MOSFET on SiC and its application in power electronic systems. Parameters extraction for 4H SiC MOS devices is the main focus of the first topic developed in this thesis. Calibration of two-dimensional (2-
Linewih, Handoko
core   +1 more source

Thermal Management and Experimental Validation of a Copper-Inlay PCB for SiC MOSFETs in High-Power EV Fast Chargers

IEEE Open Journal of Power Electronics
Efficient thermal management is essential to ensure reliability and performance in high-power electric vehicle (EV) fast-charging converters employing silicon carbide (SiC) MOSFETs.
Muhammad Awais, Saghir Amin, Francisco P. Brito, Nuno Costa, Joao L. Afonso, Vitor Monteiro   +5 more
doaj   +1 more source

Influence of Parasitic Inductances on Switching Performance of SiC MOSFET

, 2018
Compared to the silicon power devices, silicon carbide device has shorter switch time. Hence, as a result of the faster transition of voltage (dv/dt) and current (di/dt) in SiC MOSFET, the influence of parasitic parameters on SiC MOSFET’s switching ...
Zhibin Zhao, Junji Ke, Jinyuan Li, Meiting Cui, Yujie Du   +4 more
core   +1 more source

Impact of gamma-ray irradiation on commercial silicon carbide MOSFET with boost converter application

Power Electronic Devices and Components
This paper study impact of gamma-ray irradiation on the characteristics of silicon carbide power metal oxide semiconductor field effect transistor (SiC MOSFET) from CREE, Inc., and its corresponding effects on the operation of 5/12 V DC-DC boost ...
S. M. Abd El-Azeem, W. Abd El-Basit
doaj   +1 more source

Low Inductance Switching for SiC MOSFET Based Power Circuit

, 2017
Wide Band Gap power semiconductor switching devices offer superior performance compared to an equivalent Si power device. SiC MOSFETs can be competitive when compared to Si IGBTs of the same voltage class, whilst offering greater benefits at high ...
Zhang, T, Palmer, P, Hari, N, ,, Zhang, X, Shelton, E   +5 more
core   +1 more source

Thermal Impedance Characterization Using Optical Measurement Assisted by Multi-Physics Simulation for Multi-Chip SiC MOSFET Module. [PDF]

Micromachines (Basel), 2020
Kim MK, Yoon SW.
europepmc   +1 more source