Results 111 to 120 of about 1,059 (165)

Sensorless Junction Temperature Estimation of Onboard SiC MOSFETs Using Dual-Gate-Bias-Triggered Third-Quadrant Characteristics. [PDF]

Sensors (Basel)
Lu Y, Ding Y, Li J, Yin H, Li X, Zhu C, Zhang X.   +6 more
europepmc   +1 more source

Performance evaluation of a bi-directional synchronous H6 inverter for AC/DC system interaction with SiC and Si-Based at different switching frequencies. [PDF]

PLoS One
Alshammari MS, Namadmalan A, Duffy M.
europepmc   +1 more source

A 3.3 kV SiC Semi-Superjunction MOSFET with Trench Sidewall Implantations. [PDF]

Micromachines (Basel)
Boccarossa M, Melnyk K, Renz AB, Gammon PM, Kotagama V, Shah VA, Maresca L, Irace A, Antoniou M.   +8 more
europepmc   +1 more source

Recent Progress in SiC-MOSFET

Recent Progress in SiC-MOSFET
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SiC MOSFETs

2020
Modern switching components for energy processing widely consist of active semiconductor devices in Si, a mature and well-established technology that is reaching its physical limits. The main limitations of Si concern the blocking voltage capability, the switching frequency, and the operating temperature.
Maresca L., Borghese A., Romano G., Fayyaz A., Riccio M., Breglio G., Castellazzi A., Irace A.   +7 more
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SiC Integrated MOSFETs

physica status solidi (a), 1997
A new design and processing concepts have been applied to develop practical SiC trench MOSFETs for high power applications. The designed trench MOSFET has a MOS structure consisting of epitaxially grown n-type SiC trench sidewall layers. The current flows via an accumulation mode through the channel defined in the epitaxially grown SiC sidewall layer ...
S. Onda, R. Kumar, K. Hara
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A simple SiC power MOSFET model

IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society, 2017
With the application of SiC power metal-oxide-semiconductor field-effect transistor (MOSFET) in high voltage power converters, switching frequency and speed increase. Thus, severe electromagnetic interference(EMI) problems occur. To predict EMI performances and evaluate other performances in the design phase, a simple and valid switch model is needed ...
Zhuolin Duan, Dong Zhang, Tao Fan, Xuhui Wen   +3 more
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Advances in SiC power MOSFET technology

Microelectronics Reliability, 2003
Abstract In recent years, SiC has received increased attention because of its potential for a wide variety of high temperature, high power, high frequency, and/or radiation hardened applications under which conventional semiconductors cannot adequately perform.
Sima Dimitrijev, Philippe Jamet
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The direct series connection of SiC MOSFETs

IECON 2016 - 42nd Annual Conference of the IEEE Industrial Electronics Society, 2016
Silicon Carbide (SiC) MOSFETs offer high speed switching for power applications at high blocking voltage ratings, e.g. 1.2 kV, 3.3kV and more in the future. Connecting SiC MOSFETs in series is of interest to achieve AC distribution voltage levels.
Patrick R. Palmer, Xueqiang Zhang, Jin Zhang   +2 more
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Robustness of 1.2kV SiC MOSFET devices

Microelectronics Reliability, 2013
This paper provides an evaluation of robustness and performances of two types of 1.2 kV SiC MOSFETs in order to investigate these power devices for aircraft applications in medium power range. The paper focuses on robustness results showing the weakness of the gate under short-circuit tests.
Dhouha, Othman, Lefebvre, Stéphane, Berkani, Mounira, Khatir, Zoubir, Ibrahim, Ali, Bouzourene, Arezki   +5 more
openaire   +3 more sources