Results 81 to 90 of about 4,517 (219)
An Open Access Database of Power Diode Characteristics at Cryogenic Temperature
IET Electric Power Applications, Volume 20, Issue 1, January/December 2026.The development of power electronic converters operating at cryogenic temperatures is limited by the lack of data on electronic components outside the standard temperature range specified by manufacturers (typically above −65°C, i.e., 208 K). To fill this gap, the construction of an open access database of power electronic component characteristics at ...
Yasmine Baazizi +6 more
wiley +1 more source
IET Electrical Systems in Transportation, Volume 2026, Issue 1, 2026.Direct current (DC)–DC converters are the backbone of electric vehicle (EV) power trains, enabling efficient and bidirectional energy flow between the battery, high‐voltage (HV) DC link, and auxiliary rails under tight isolation, gain, ripple, and electromagnetic interference (EMI) constraints.
Abhilash Sakhare +3 more
wiley +1 more source
Impact of Short-circuit events on Lifetime Expectancy of SiC MOSFETs [PDF]
openThe Silicon Carbide (SiC) is a "new" material that offers very high performance, but the lifetime of components (in this case SiC MOSFET) are not sufficient and is shorter than the Silicon (Si) counterparts.
MARTELLO, GIOVANNI
core
High-Temperature SiC MOSFET Gas Sensors
, 2004 Due to tightening restrictions on combustion exhaust emissions, low-cost sensors are desired for monitoring NOx production in high-temperature exhaust streams.
Kevin Matocha +3 more
core +1 more source
Journal of Engineering, 2016 An active gate controlled semiconductor protection switch using SiC-MOSFET is proposed to achieve the fault tolerant operation of ISOP (Input Series and Output Parallel) connected multicell dc-dc converter. The SiC-MOSFET with high temperature capability
Yusuke Hayashi +2 more
doaj +1 more source
IET Nanodielectrics, Volume 9, Issue 1, January/December 2026.Based on the principle of charge–atom coupling, this paper proposes a novel assessment method utilising molecular vibration acoustic waves induced by forced charge motion at square‐wave pulse edges. By directly employing the rising and falling edges of high‐voltage square‐wave pulses inherent in device operation as excitation sources, this method ...
Dongxin He +8 more
wiley +1 more source
IET Power Electronics, Volume 19, Issue 1, January/December 2026.The article discusses the novel topology with high gain and low voltage stress DC‐DC converter based on switched‐capacitor and switched‐inductors for fuel cell and PV applications. The converter performance is analyzed and verified with the hardware prototype (22/400V, 50kHz).
Md Samiullah +4 more
wiley +1 more source
IET Power Electronics, Volume 19, Issue 1, January/December 2026.This paper presents a novel behavioural model for SiC MOSFETs using a tanh(x)‐based current expression, which ensures smoothness, reduces core parameters to five, and effectively embeds temperature effects. A stepwise parameter extraction method prevents overfitting, enabling high‐fidelity simulation.
Shuoyu Ye +6 more
wiley +1 more source
Challenges in Switching SiC MOSFET without Ringing
, 2014 Switching SiC MOSFET without ringing in high frequency applications is important for meeting the EMI (ElectroMagnetic Interference) standard. Achieving a clean switching waveform of SiC MOSFET without additional components is becoming a challenge.
Li, Helong, Munk-Nielsen, Stig; id_orcid
core
Représentation d'état pour un MOSFET SiC
, 2018 International audienceThis paper proposes a State Space Model for a power a Silicon Carbide (SiC) MOSFET. The model uses the electrical EKV MOSFET structure. The model is developed for the SiC MOSFET CMD CREE (V, A) and uses the parameters extracted from
Boussak, M +4 more
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