Results 81 to 90 of about 1,059 (165)

Reliability-oriented performance evaluation of PV inverters using wide bandgap semiconductors. [PDF]

PLoS One
Kshatri SS, Dhillon J, Mishra S, Sharma NK, Jadoun VK.   +4 more
europepmc   +1 more source

Channel and Body-Diode Conduction Characteristics in 4H-SiC MOSFETs Under Third-Quadrant Switching Conditions. [PDF]

Micromachines (Basel)
Huang X, Song Y, Zhong C, Wang Z.
europepmc   +1 more source

Effects of parasitic capacitance on switching transients and thermal performance in a single-phase SiC power MOSFET inverter. [PDF]

Sci Rep
Cheng HC, Jhu WY, Liu YC, Yu CF, Chiu PK, Chang TC.   +5 more
europepmc   +1 more source

Cryogenic neuromorphic circuits using gate-controlled negative differential resistance in silicon carbide. [PDF]

Nat Commun
Yang X, Porter M, Qin Y, Yang Z, Gong H, Jin L, Xi Z, Wang H, Zhu L, Zhang Y, Shao L.   +10 more
europepmc   +1 more source

Simulation Study of Enhancement-Mode <i>β</i>-Ga₂O₃ MOSFETs on a Novel P-Ga₂O₃/AlN/SiC Substrate. [PDF]

Micromachines (Basel)
Lu W, Zhou C, Wang D, Liu Y, Wang P, Wang G.   +5 more
europepmc   +1 more source

A split gate double-channel asymmetric SiC trench MOSFET for improved gate oxide reliability and dynamic characteristics. [PDF]

Sci Rep
Xu F, Dong Y, Li F, Xie F, Guo P, Zhou Y, Liu Y, Meng X, Cao R, Xue Y.   +9 more
europepmc   +1 more source

A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability. [PDF]

Materials (Basel)
Feng Z, Lai P, Hasan ASMK, Fatani F, Alaeddini A, Huang L, Chen Z, Li Q.   +7 more
europepmc   +1 more source

Review of Prognosis Approaches Applied to Power SiC MOSFETs for Health State and Remaining Useful Life Prediction. [PDF]

Entropy (Basel)
Kumar S, Allard B, Hologne-Carpentier M, Clerc G, Auger F.   +4 more
europepmc   +1 more source

A Si/SiC Heterojunction Double-Trench MOSFET with Improved Conduction Characteristics. [PDF]

Micromachines (Basel)
Kang Y, Liu D, Li T, Qiu Z, Lu S, Hu X.
europepmc   +1 more source

Heterogeneous integration of ultrawide bandgap semiconductors for radio frequency power devices. [PDF]

Sci Adv
Zhou H, Zhou M, Xiang M, Gong H, Gao G, Wang C, Zhang Y, Dang K, Liu Z, Zhang J, Zhang H, Wang Y, Wang H, Si M, Zhang Y, Hao Y, Zhang J.   +16 more
europepmc   +1 more source