Results 81 to 90 of about 225,573 (220)
Advanced Materials Technologies, Volume 11, Issue 7, 6 April 2026.The 4R principle—Resilience, Repairability, Recyclability, and Renewability—enables sustainable liquid‐metal transistors. LM materials provide stretchable, damage‐tolerant architectures, allow rapid circuit repair, permit full material recovery through dissolution, and support renewable fabrication cycles, forming a closed‐loop pathway toward ...
Elahe Parvini, Abdollah Hajalilou
wiley +1 more source
Review and Prospect of Short-circuit Failure and Degradation Mechanism of SiC MOSFET
, 2021 SiC MOSFET can greatly improve the efficiency and power density of the converter, and has good application prospects in high frequency, high temperature and high voltage field.
Kang, Jianlong +4 more
core +1 more source
Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.Gate‐length engineering in recessed‐gate enhancement‐mode β‐Ga2O3 metal‐oxide‐semiconductor filed effect transistors was investigated by extending the gate to fully cover the etched recess. Complete recess coverage improves electrostatic control, reduces series resistance, shifts the threshold voltage positively, and enhances mobility, on‐resistance ...
Ching‐Hsuan Lee +7 more
wiley +1 more source
Beyond Conventional Cooling: Advanced Micro/Nanostructures for Managing Extreme Heat Flux
Advanced Materials, Volume 38, Issue 5, 22 January 2026.This review examines the design, application, and manufacturing of biomimetic or engineered micro/nanostructures for managing high heat‐flux in multi‐level electronics by enhancing conductive, convective, phase‐changing, and radiative heat transfer mechanisms, highlighting their potential for efficient, targeted thermal management, and future prospects.
Yuankun Zhang +7 more
wiley +1 more source
Challenges in Switching SiC MOSFET without Ringing
, 2014 Switching SiC MOSFET without ringing in high frequency applications is important for meeting the EMI (ElectroMagnetic Interference) standard. Achieving a clean switching waveform of SiC MOSFET without additional components is becoming a challenge.
Li, Helong, Munk-Nielsen, Stig; id_orcid
core
The Experience with SiC MOSFET and Buck Converter Snubber Design
, 2014 The newest semiconductor devices on the market are MOSFET transistors based on the silicon carbide – SiC. This material has exclusive features thanks to which it becomes a better switch than Si – silicon semiconductor switch.
Petr Vaculik
core +1 more source
Desenvolvimento de um dosímetro in vivo a MOSFET para aplicações em radioterapia [PDF]
, 2013 Tese (doutorado) - Universidade Federal de Santa Catarina, Centro Tecnológico, Programa de Pós-Graduação em Engenharia Elétrica, Florianópolis, 2013.Na radioterapia (teleterapia), a diferença entre a dose prescrita e a dose recebida pelo paciente deve ...
Siebel, Osmar Franca
core
PERANCANGAN GATE DRIVER UNTUK SIC MOSFET
, 2021 ABSTRAKPengendalian komponen elektronika daya diperlukannya driver pada gate sehingga diperlukannya perancangan gate driver bertujuan untuk memperkuat sinyal transmisi yang berasal dari control stage untuk memastikan switching yang sesuai dari power ...
Pradipta, Doni +2 more
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Première séance du séminaire SIC, Université Lille 3, 27 mars 2015
, 2015 La première séance du séminaire SIC aura lieu le 27 mars 2015 de 9h30 à 17h45 à l'Université de Lille 3 (Campus Sciences humaines et sociales) dans la salle de séminaire de l'IRHiS (des panneaux vous indiqueront le chemin).
sic
core
Early fault detection in SiC-MOSFET with application in boost converter
Revista Facultad de Ingeniería Universidad de Antioquia, 2018 This paper presents the design of a fault detection circuit applied to a silicon carbide Mosfet (SiC-Mosfet). Fault detection is done by monitoring the behavior of the gate signal. The most important characteristic that has been reported in literature is
Leobardo Hernández-González +6 more
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