Results 81 to 90 of about 21,181 (269)
EnergiesIn a converter of actual working condition, the change in the current and voltage of the power device will cause the junction temperature to fluctuate greatly. This device is subjected to high thermal stress due to the change in the junction temperature.
Junke Wu +5 more
doaj +1 more source
A Fault-Tolerant T-Type Multilevel Inverter Topology with Soft-Switching Capability Based on Si and SiC Hybrid Phase Legs [PDF]
, 2016 The performance of a novel three-phase four-leg fault-tolerant T-Type inverter topology is presented in this paper, which significantly improves the inverter\u27s fault-tolerant capability regarding device switch faults.
Demerdash, Nabeel +4 more
core +1 more source
Modular Marx Generator Based on SiC-MOSFET Generating Adjustable Rectangular Pulses [PDF]
, 2021 Yahia Achour +2 more
openalex +1 more source
Journal of Telecommunications and Information Technology, 2007 The paper reviews the development of the 3C-SiC MOSFETs in a unique development project combining the material and device expertise of HAST (Hoya Advanced Semiconductor Technologies) and Acreo, respectively. The motivation for the development of the 3C-SiC MOSFETs and the summary of the results from the lateral and vertical devices with varying size ...
Mietek Bakowski +5 more
openaire +2 more sources
IET Nanodielectrics, Volume 9, Issue 1, January/December 2026.Based on the principle of charge–atom coupling, this paper proposes a novel assessment method utilising molecular vibration acoustic waves induced by forced charge motion at square‐wave pulse edges. By directly employing the rising and falling edges of high‐voltage square‐wave pulses inherent in device operation as excitation sources, this method ...
Dongxin He +8 more
wiley +1 more source
A Versatile workbench simulator: Five-phase inverter and PMa-SynRM performance evaluation [PDF]
, 2019 © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new ...
Acosta Cambranis, Fernando Geovany +4 more
core +1 more source
IET Power Electronics, Volume 19, Issue 1, January/December 2026.The article discusses the novel topology with high gain and low voltage stress DC‐DC converter based on switched‐capacitor and switched‐inductors for fuel cell and PV applications. The converter performance is analyzed and verified with the hardware prototype (22/400V, 50kHz).
Md Samiullah +4 more
wiley +1 more source
Impact of SiC technology in a three-port active bridge converter for energy storage integrated solid state transformer applications [PDF]
, 2016 Silicon Carbide (SiC) MOSFET power module has become commercially available in the past few years, and it is attractive in solid state transformers (SSTs) applications to replace Silicon (Si)-based IGBTs.
Castellazzi, Alberto +4 more
core
Cryogenic Characterisation and Modelling of Commercial SiC MOSFETs [PDF]
Materials Science Forum, 2017 Two commercial 1.2 kV SiC MOSFETs have been extensively characterised from 30 to 320 K. The temperature dependence of their I/V characteristics, threshold voltage, and breakdown voltage has been examined and are presented in this paper. Overall, the measured characteristics of both devices demonstrate very similar temperature dependencies and it is ...
Lee J. Woodend +7 more
openaire +1 more source
IET Power Electronics, Volume 19, Issue 1, January/December 2026.This paper presents a novel behavioural model for SiC MOSFETs using a tanh(x)‐based current expression, which ensures smoothness, reduces core parameters to five, and effectively embeds temperature effects. A stepwise parameter extraction method prevents overfitting, enabling high‐fidelity simulation.
Shuoyu Ye +6 more
wiley +1 more source