Results 51 to 60 of about 225,573 (220)

Hybrid Inverters With Dual Switching Frequencies for Switched Reluctance Motors

Energy Science &Engineering, EarlyView.
A hybrid dual‐switching‐frequency inverter for SRMs is proposed, combining SiC and IGBT devices based on rotor inductance. The method enables accurate current tracking with simple hysteresis control, significantly reducing torque ripple, vibration, and acoustic noise while cutting inverter cost compared to full‐SiC solutions.
Fares S. El‐Faouri, Majd G. Batarseh, Hamzeh J. Jaber, Ayman Faza, Wejdan Abu Elhaija   +4 more
wiley   +1 more source

TCAD model calibration for the SiC/SiO2interface trap distribution of a planar SiC MOSFET

, 2020
Silicon carbide (SiC) metal-oxide-semiconductor field effect transistor (MOSFETs) are gradually replacing silicon power devices in many applications because of the higher performances of the material.
Matacena I., Irace A., Breglio G., Daliento S., Maresca L., Riccio M.   +5 more
core   +1 more source

Microscopic Stress Analysis of Silicon Carbide Devices Under Overcurrent Conditions in DC Solid‐State Circuit Breakers

IET Smart Energy Systems, EarlyView.
A coupled Saber–TCAD–thermo‐mechanical simulation framework is proposed to evaluate microscopic stresses in SiC MOSFETs under overcurrent operation. Ultrahigh gate‐voltage driving reduces thermal and mechanical stress but increases gate oxide electric‐field stress, revealing a reliability tradeoff for DC solid‐state circuit breakers.
Bin Yu, Jiawei Qin, Liang Chen, Zehua Dai   +3 more
wiley   +1 more source

An Improved SiC MOSFET With Integrated Schottky Contact Super Barrier Rectifier

IEEE Access
This study focuses on the SiC MOSFET with integrated Schottky contact super barrier rectifier (SiC SSBR-MOSFET) through the application of TCAD simulation methodologies.
Xintian Zhou, Jinglong Yan, Yun Tang, Dongqing Hu, Yu Wu, Yunpeng Jia, Bodian Li, Yuanfu Zhao   +7 more
doaj   +1 more source

Crosstalk Induced Shoot-Through in BTI-Stressed Symmetrical & Asymmetrical Double-Trench SiC Power MOSFETs

IEEE Open Journal of the Industrial Electronics Society, 2022
In this paper, the crosstalk-induced shoot-through current and induced gate voltage of SiC planar MOSFETs, SiC symmetrical double-trench MOSFETs and SiC asymmetrical double-trench MOSFETs is investigated on a half-bridge circuit to analyse the impact of ...
Juefei Yang, Saeed Jahdi, Bernard Stark, Olayiwola Alatise, Jose Ortiz-Gonzalez, Ruizhu Wu, Phil Mellor   +6 more
doaj   +1 more source

Modeling of Diamond Trench Metal Oxide Semiconductor Barrier Schottky Rectifier Based on Dynamic Reverse Bias Simulation Framework

physica status solidi (a), Volume 223, Issue 17, 9 September 2026.
Time‐resolved mixed‐mode technology computer aided design simulations reveal that the transient ionization response of deep boron acceptors fundamentally modifies the charge‐sharing mechanism in diamond TMBS rectifiers. Consequently, the optimum trench geometry under dynamic reverse‐bias conditions differs significantly from conventional quasi‐static ...
Martin Kah, Nazareno Donato, Ethan Gardner, Nicolas Rouger, Rebecca Watkins, Calum Henderson, Jingfan Yang, Richard Jackman, Florin Udrea   +8 more
wiley   +1 more source

Conjugated Metal‐Organic Frameworks on Laser‐Induced‐Graphene Scaffold Enable Picomolar Sensitivity in Electrical Biosensors

Advanced Materials Interfaces, Volume 13, Issue 17, 8 September 2026.
A controlled layer‐by‐layer growth process integrates conjugated metal‐organic framework thin films onto a hierarchical 3D laser‐induced graphene scaffold. When incorporated into an extended‐gate field‐effect transistor configuration, this synergistic hybrid platform achieves robust aptamer immobilization, driving highly selective, picomolar‐level ...
Khanh T. M. Le, Tuan‐Khoa Nguyen, Nam‐Trung Nguyen   +2 more
wiley   +1 more source

Research on High-power Full SiC Converter

机车电传动, 2018
In order to adapt to the development trend of high frequency and high power density of converter products, the application of high-power all-SiC-MOSFET device in converter was studied.
ZHANG Qing, ZHANG Xiaoyong, RAO Peinan, SHI Hongliang, ZHAO Mingrui, ZHOU Shuai   +5 more
doaj  

Performance Evaluation of Si/SiC Hybrid Switch-Based Three-Level Active Neutral-Point-Clamped Inverter

IEEE Open Journal of Industry Applications, 2022
In this paper, two types of Silicon (Si) IGBT and Silicon Carbide (SiC) hybrid switch (Si/SiC HyS) based three-level active neutral-point-clamped (3L-ANPC) inverter are proposed for high efficiency and low device cost.
Haichen Liu, Tiefu Zhao, Xuezhi Wu
doaj   +1 more source

Approximate SPICE Modeling of SiC MOSFETs

IEEE Transactions on Power Electronics
The recent adaptation of wide bandgap (WBG) semiconductors pushes the SPICE circuit simulation software to the very edge, requiring computationally light and accurate assessment of rapid and oscillatory transients. One of the main limitations in SPICE modeling of WBG semiconductors is the lack of built-in models in the available software, forcing usage
Pawel Piotr Kubulus, Janus Dybdahl Meinert, Szymon Beczkowski, Asger Bjørn Jørgensen, Stig Munk-Nielsen, Dimosthenis Peftitsis   +5 more
openaire   +3 more sources