Results 51 to 60 of about 4,517 (219)

Approximate SPICE Modeling of SiC MOSFETs

IEEE Transactions on Power Electronics
The recent adaptation of wide bandgap (WBG) semiconductors pushes the SPICE circuit simulation software to the very edge, requiring computationally light and accurate assessment of rapid and oscillatory transients. One of the main limitations in SPICE modeling of WBG semiconductors is the lack of built-in models in the available software, forcing usage
Pawel Piotr Kubulus, Janus Dybdahl Meinert, Szymon Beczkowski, Asger Bjørn Jørgensen, Stig Munk-Nielsen, Dimosthenis Peftitsis   +5 more
openaire   +3 more sources

Wide‐Bandgap Semiconductor‐Based Neuromorphic Computing

Information &Functional Materials, Volume 3, Issue 2, Page 66-100, June 2026.
Wide‐bandgap semiconductors enable robust, low‐power neuromorphic devices for extreme environments. This review outlines material advantages, device physics, integration, and future directions for next‐generation brain‐inspired computing. ABSTRACT Neuromorphic computing has emerged as a promising paradigm to overcome the energy inefficiency and data ...
Hongyu Tang, Pengsheng Min, Yang Zhang, Qingchun Zhang, Wanlu Zhang, Ruiqian Guo, Guoqi Zhang   +6 more
wiley   +1 more source

Parameter extraction and selection for a scalable N-type SiC MOSFETs model and characteristic verification along with conventional dc-dc buck converter integration.

PLoS ONE, 2023
Most silicon carbide (SiC) MOSFET models are application-specific. These are already defined by the manufacturers and their parameters are mostly partially accessible due to restrictions.
Hassan Khalid, Saad Mekhilef, Marif Daula Siddique, Addy Wahyudie, Mahrous Ahmed, Mehdi Seyedmahmoudian, Alex Stojcevski   +6 more
doaj   +1 more source

Comparing SiC MOSFET, IGBT and Si MOSFET in LV distribution inverters [PDF]

IECON 2015 - 41st Annual Conference of the IEEE Industrial Electronics Society, 2015
Efficency, power quality and EMI are three crucial performance drivers in LVDC applications such as electrical supply, EV charging or DC aerospace. Recent developments in SiC MOSFETs and MMC for LVDC promise two significant improvements in LVDC inverter performance.
Roscoe, N.M., Zhong, Y., Finney, S.J.
openaire   +3 more sources

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, Volume 36, Issue 41, 21 May 2026.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Crosstalk Induced Shoot-Through in BTI-Stressed Symmetrical & Asymmetrical Double-Trench SiC Power MOSFETs

IEEE Open Journal of the Industrial Electronics Society, 2022
In this paper, the crosstalk-induced shoot-through current and induced gate voltage of SiC planar MOSFETs, SiC symmetrical double-trench MOSFETs and SiC asymmetrical double-trench MOSFETs is investigated on a half-bridge circuit to analyse the impact of ...
Juefei Yang, Saeed Jahdi, Bernard Stark, Olayiwola Alatise, Jose Ortiz-Gonzalez, Ruizhu Wu, Phil Mellor   +6 more
doaj   +1 more source

Detection of Toxic Gases and Volatile Organic Compounds Using Highly Adsorptive Nanomaterials: A Comprehensive Assessment

EcoMat, Volume 8, Issue 5, May 2026.
This review highlights how nanomaterials with high adsorption capacities including carbon‐based structures, transition metal oxides, 2D layers, and zeolites enable sensitive and selective detection of toxic gases and VOCs. Their tailored properties and sensing mechanisms drive the development of next‐generation gas sensors for environmental and ...
Hamdy A. Ismail, Sabbah Ataya, Mohamed M. Goda, Ahmed G. Hussein, Ahmed Ramah, Ahmad G. Ramadan, Rashid Khan, Joy Djuansjah, Swellam W. Sharshir, Ahmed El‐Harairy   +9 more
wiley   +1 more source

An Improved SiC MOSFET With Integrated Schottky Contact Super Barrier Rectifier

IEEE Access
This study focuses on the SiC MOSFET with integrated Schottky contact super barrier rectifier (SiC SSBR-MOSFET) through the application of TCAD simulation methodologies.
Xintian Zhou, Jinglong Yan, Yun Tang, Dongqing Hu, Yu Wu, Yunpeng Jia, Bodian Li, Yuanfu Zhao   +7 more
doaj   +1 more source

A Low‐Cost and Compact High‐Frequency Gallium Nitride Gradient Power Amplifier for Low‐Field MRI

Magnetic Resonance in Medicine, Volume 95, Issue 5, Page 2992-2999, May 2026.
ABSTRACT Purpose To reduce the upfront cost of small, low‐field MRI systems, while expanding the capabilities of their gradient systems. Methods A gradient power amplifier was designed to leverage the lowering cost of Gallium Nitride (GaN) power transistors and high speed logic, to achieve high efficiency and responsiveness for driving gradient coils ...
N. Reid Bolding, Jacob Hannan, Christopher Vaughn, Aria Patel, Snow Lin, Jessie E. P. Sun, William Grissom, Mark A. Griswold   +7 more
wiley   +1 more source

Research on High-power Full SiC Converter

机车电传动, 2018
In order to adapt to the development trend of high frequency and high power density of converter products, the application of high-power all-SiC-MOSFET device in converter was studied.
ZHANG Qing, ZHANG Xiaoyong, RAO Peinan, SHI Hongliang, ZHAO Mingrui, ZHOU Shuai   +5 more
doaj