Results 51 to 60 of about 21,181 (269)
Design of an Advanced Programmable Current-Source Gate Driver for Dynamic Control of SiC Device [PDF]
, 2019 Silicon carbide (SiC) power devices outperform Silicon-based devices in operational voltage levels, power densities, operational temperatures and switching frequencies.
Pickert, Volker +2 more
core +1 more source
Analysis on characteristic of 3.3‐kV full SiC device and railway traction converter design
IET Power Electronics, 2022 With the rapid development of wide‐band gap semiconductor chip and package technologies, the voltage class of commercial silicon carbide (SiC) device is gradually improved.
Rongjun Ding +4 more
doaj +1 more source
A novel active gate driver for improving SiC MOSFET switching trajectory [PDF]
, 2017 The trend in power electronic applications is to reach higher power density and higher efficiency. Currently, the wide band-gap devices such as silicon carbide MOSFET (SiC MOSFET) are of great interest because they can work at higher switching frequency ...
Ghorbani, Hamidreza +3 more
core +2 more sources
High Frequency Multipurpose SiC MOSFET Driver
Advances in Electrical and Electronic Engineering, 2021 This article describes a new multipurpose Silicone-Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) driver, which was designed and manufactured for a high frequency operating SiC transistor as a semiconductor switching device of power converters.
Strossa, Jan +4 more
openaire +3 more sources
Impact of Oxygen Plasma Pre‐Treatment on Thermal Oxidation and Reliability of SiO2 on 4H‐SiC
Advanced Materials Interfaces, EarlyView.We investigate how oxygen plasma pre‐treatment affects the thermal oxidation of silicon carbide. While plasma modification increases growth rates by 84%, it reduces dielectric breakdown strength by 18%. Our findings reveal that although plasma improves the interface state density, it introduces structural damage, highlighting a critical trade‐off ...
Chezhiyan Nanjappan +3 more
wiley +1 more source
Silicon Nitride Resistive Memories
Advanced Electronic Materials, EarlyView.Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source
Simulation and Analysis of Static Temperature Characteristics of 4H-SiC MOSFET
机车电传动, 2020 SiC materials have excellent properties such as large forbidden band width, high critical electric field, high carrier saturation drift speed and high thermal conductivity, making them widely used in high temperature, high voltage, high power and other ...
Liang ZENG +5 more
doaj
EcoEnergy, EarlyView.As maritime transport electrifies, bidirectional charging (V2G) offers a dual‐purpose solution for energy resilience and economic viability. This work identifies key technological advancements and lifecycle challenges utilizing practical case studies to demonstrate how V2G systems can drive decarbonization and grid stability in the marine sector ...
Jonathan Bloor +3 more
wiley +1 more source
Novel High Frequency Silicon Carbide Static Induction Transistor-Based Test-Bed for the Acquisition of SiC Power Device Reverse Recovery Characteristics [PDF]
, 2003 A test system is presented that utilizes a high-frequency Silicon Carbide (SiC) Static Induction Transistor (SIT) in place of the traditional MOSFET to test reverse recovery characteristics for the new class of SiC power diodes.
Lostetter, Alexander B. +4 more
core +1 more source
EcoMat, Volume 8, Issue 5, May 2026.This review highlights how nanomaterials with high adsorption capacities including carbon‐based structures, transition metal oxides, 2D layers, and zeolites enable sensitive and selective detection of toxic gases and VOCs. Their tailored properties and sensing mechanisms drive the development of next‐generation gas sensors for environmental and ...
Hamdy A. Ismail +9 more
wiley +1 more source