Results 51 to 60 of about 1,059 (165)

Cryogenic Characterisation and Modelling of Commercial SiC MOSFETs [PDF]

Materials Science Forum, 2017
Two commercial 1.2 kV SiC MOSFETs have been extensively characterised from 30 to 320 K. The temperature dependence of their I/V characteristics, threshold voltage, and breakdown voltage has been examined and are presented in this paper. Overall, the measured characteristics of both devices demonstrate very similar temperature dependencies and it is ...
Lee J. Woodend, Peter Michael Gammon, Vishal A. Shah, Amador Pérez-Tomás, Fan Li, Dean P. Hamilton, Maksym Myronov, Philip Andrew Mawby   +7 more
openaire   +1 more source

Fault Tolerant Operation of ISOP Multicell Dc-Dc Converter Using Active Gate Controlled SiC Protection Switch

Journal of Engineering, 2016
An active gate controlled semiconductor protection switch using SiC-MOSFET is proposed to achieve the fault tolerant operation of ISOP (Input Series and Output Parallel) connected multicell dc-dc converter. The SiC-MOSFET with high temperature capability
Yusuke Hayashi, Yoshikatsu Matsugaki, Tamotsu Ninomiya   +2 more
doaj   +1 more source

Development of 3C-SiC MOSFETs

Journal of Telecommunications and Information Technology, 2007
The paper reviews the development of the 3C-SiC MOSFETs in a unique development project combining the material and device expertise of HAST (Hoya Advanced Semiconductor Technologies) and Acreo, respectively. The motivation for the development of the 3C-SiC MOSFETs and the summary of the results from the lateral and vertical devices with varying size ...
Mietek Bakowski, Adolf Schöner, Per Ericsson, Helena Strömberg, Hiroyuki Nagasawa, Masayuki Abe   +5 more
openaire   +2 more sources

Research on Single-Switch Wireless Power Transfer System Based on SiC MOSFET

IEEE Access, 2019
The traditional wireless power transfer circuit uses the full-bridge or half-bridge inverter, which has complex circuit and control and low reliability.
Houji Li, Chunfang Wang, Yunrui Liu, Rui Yue   +3 more
doaj   +1 more source

Early fault detection in SiC-MOSFET with application in boost converter

Revista Facultad de Ingeniería Universidad de Antioquia, 2018
This paper presents the design of a fault detection circuit applied to a silicon carbide Mosfet (SiC-Mosfet). Fault detection is done by monitoring the behavior of the gate signal. The most important characteristic that has been reported in literature is
Leobardo Hernández-González, Climaco Arvizu-Ogilvie, Alejandro Tapia-Hernández, Mario Ponce-Silva, Abraham Claudio-Sánchez, Marco Rodríguez-Blanco, Jesús Aguayo-Alquicira   +6 more
doaj  

Research on High Efficient Resonant Full-bridge Converter with High Voltage SiC MOSFET

Kongzhi Yu Xinxi Jishu, 2016
With SiC MOSFET, resonant converter can achieve high frequency and high efficiency, thus increasing the power density with reducing total cost and simplify topology.
Jimmy Liu, John Mookken, Kin Lap
doaj  

Dynamic Voltage Balancing Across Series-Connected 10 kV SiC JBS Diodes in Medium Voltage 3L-NPC Power Converter Having Snubberless Series-Connected 10 kV SiC MOSFETs

IEEE Open Journal of the Industrial Electronics Society
This article addresses the mitigation of dynamic voltage imbalance in series-connected 10 kV silicon carbide (SiC) JBS diodes within a three-level NPC (3L-NPC) converter using active turn-off delay control across complementary series-connected 10 kV SiC ...
Sanket Parashar, Nithin Kolli, Raj Kumar Kokkonda, Ajit Kanale, Subhashish Bhattacharya, Bantval Jayant Baliga   +5 more
doaj   +1 more source

Evaluation of Silicone Carbide Mosfet Driving Circuit Performance

Communications
The performances of different driving circuits configurations designed for silicon carbide MOSFET transistors are compared in this research. The simulation of the double-pulse test (DPT) was performed with the use of three driving circuit configurations.
Veronika Švárna, Michal Frivaldsky
doaj   +1 more source

High-temperature characteristics of SiC module and 100 kW SiC AC-DC converter at a junction temperature of 180 °C

Global Energy Interconnection, 2019
High-temperature, high-power converters have gained importance in industrial applications given their ability to operate in adverse environments, such as in petroleum exploration, multi-electric aircrafts, and electric vehicles.
Juanjuan Lu, Zhe Zhou, Jianhong Hao, Yi Hao, Hao Zhang, Ruixiang Hao   +5 more
doaj   +1 more source

Investigation of the Degradation Mechanism of SiC MOSFET Subjected to Multiple Stresses. [PDF]

Micromachines (Basel), 2023
Dong H, Wu Y, Li C, Xu H.
europepmc   +1 more source