Results 211 to 220 of about 40,768 (253)
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Switching performance of a SiC MOSFET body diode and SiC schottky diodes at different temperatures
2017 IEEE Energy Conversion Congress and Exposition (ECCE), 2017This paper investigates the reverse recovery behaviour of a SiC MOSFET intrinsic/body diode and compares the diode's performance with similarly rated SiC Schottky diodes at different temperatures. A circuit level analytical modelling approach is proposed for rapid and accurate predictions of switching transients and losses.
M. R. Ahmed, R. Todd, A. J. Forsyth
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Telerobotic contact transscleral cyclophotocoagulation of the ciliary body with the diode laser
Journal of Robotic Surgery, 2013To assess the feasibility of using the Robotic Slave Micromanipulator Unit (RSMU) to remotely photocoagulate the ciliary body for the treatment of glaucoma with the diode laser. In fresh unoperated enucleated human eyes, the ciliary body was destroyed either with a standard contact transscleral cyclophotocoagulation 'by hand' diode laser technique, or ...
David A, Belyea +4 more
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Diode Lasers in Car‐Body Construction
Laser Technik Journal, 2013AbstractFor more than twelve years, diode lasers are used in series body manufacturing. The first diode laser was installed for brazing tailgates in the Audi A3 in 2001. The most recent generation was introduced last year [1]. For the current model, diode lasers braze tailgates and now even produce the joints between roof and side panels (Fig. 1).
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Body Diode Reliability of Commercial SiC Power MOSFETs
2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2019Stacking faults in the drift layer of 1.7 kV 4H-SiC MOSFETs result in body diode degradation, poor carrier conduction in on-state, and high leakage current in off-state. In this paper, the results of forward-bias stress on body diodes are analyzed in commercially available 1.7 kV 4H-SiC MOSFETs. Some devices show a significant degradation after forward-
Minseok Kang +8 more
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Optimization of power MOSFET body diode for speed and ruggedness
IEEE Transactions on Industry Applications, 1990The built-in diode in the power MOSFET can be used as an integral flyback diode in a power electronics circuit. However, if the power MOSFET is not optimized for utilization of the built-in diode, it can catastrophically fail during the diode mode of operation. A failure mechanism is proposed and discussed. It is found that through improved design with
H. Yilmaz +3 more
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Reverse Recovery and Carrier Lifetime in Body Diodes of LDMOS Transistors
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021In this work, we investigate the reverse recovery charge Q rr and carrier lifetime τ HL of body diodes of LDMOS transistors with different RESURF concepts. The carrier lifetime τ HL has an influence on the reverse recovery charge Q rr , which directly influences switching losses.
Vin Loong Choo +6 more
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Characterization on latest-generation SiC MOSFET's body diode
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2016This work evaluates the reverse recovery behavior of CREE's Gen 3 900V SiC MOSFET's body diode under different conditions. As the highest current rating discrete SiC MOSFET available up-to-now, CREE's Gen 3 900V 10 mΩ SiC MOSFET is the main device under test (DUT) in this work. Both static and dynamic characteristics of the DUT are presented.
Xueyu Hou +2 more
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In vivo dosimetry with silicon diodes in total body irradiation
Radiation Physics and Chemistry, 2014Abstract The aim of this work is the characterization and application of silicon diode detectors for in vivo dosimetry in total body irradiation (TBI) treatments. It was evaluated the diode response with temperature, dose rate, gantry angulations and field size. A maximum response variation of 2.2% was obtained for temperature dependence.
F.F. Oliveira +3 more
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2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe), 2015
In this paper the switching behaviour of SiC MOSFETs is regarded with respect to the influence of the free-wheeling diode. A double pulse test was performed using two silicon carbide Schottky barrier diodes (SBD) of different rated currents and the intrinsic body diode of a silicon carbide MOSFET.
Roman Horff +3 more
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In this paper the switching behaviour of SiC MOSFETs is regarded with respect to the influence of the free-wheeling diode. A double pulse test was performed using two silicon carbide Schottky barrier diodes (SBD) of different rated currents and the intrinsic body diode of a silicon carbide MOSFET.
Roman Horff +3 more
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A PMOS-diode Differential Body-driven Offset compensated 0.5V
20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems (VLSID'07), 2007This paper reports a new 0.5 V supply resolution CMOS comparator suitable for biosensor applications. The comparator uses a body-driven PMOS-diode differential pair and compensates for differential body-input referred offset-voltage through single-ended sampled-data pre-amplification.
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