Results 81 to 90 of about 47,062 (224)

110GHz fT Silicon Bipolar Transistors Implemented using Fluorine Implantation for Boron Diffusion Suppression

, 2006
This paper investigates how fluorine implantation can be used to suppress boron diffusion in the base of a double polysilicon silicon bipolar transistor and hence deliver a record fT of 110 GHz.
Alemanni, C., Ashburn, P., Bonar, J.M., El Mubarek, H.A.W., Fiore, L., Kham, M.N., Messina, A., Petralia, R., Ward, P.   +8 more
core   +1 more source

Carborane-based BODIPY dyes: synthesis, structural analysis, photophysics and applications

Frontiers in Chemistry
Icosahedral boron clusters-based BODIPY dyes represent a cutting-edge class of compounds that merge the unique properties of boron clusters with the exceptional fluorescence characteristics of BODIPY dyes.
Javier Ordóñez-Hernández, José Giner Planas, Rosario Núñez   +2 more
doaj   +1 more source

Closo-Carboranyl- and Metallacarboranyl [1,2,3]triazolyl-Decorated Lapatinib-Scaffold for Cancer Therapy Combining Tyrosine Kinase Inhibition and Boron Neutron Capture Therapy

Cells, 2020
One of the driving forces of carcinogenesis in humans is the aberrant activation of receptors; consequently, one of the most promising mechanisms for cancer treatment is receptor inhibition by chemotherapy.
Marcos Couto, Catalina Alamón, María Fernanda García, Mariángeles Kovacs, Emiliano Trias, Susana Nievas, Emiliano Pozzi, Paula Curotto, Silvia Thorp, María Alejandra Dagrosa, Francesc Teixidor, Clara Viñas, Hugo Cerecetto   +12 more
doaj   +1 more source

MODEL OF BORON CLUSTERING IN SILICON

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019
The model of formation and dissolution of neutral boron clusters in silicon has been developed. Numerical calculations showed that the model proposed describes well the experimental data obtained for rapid thermal annealing.
O. I. Velichko
doaj  

Electronic structures of B-2p and C-2p of boron-doped diamond film by soft X-ray absorption and emission spectroscopy

, 2004
X-ray absorption (XAS) and emission (XES) spectroscopy near B-K and C-K edges have been performed on metallic (~1at%B, B-diamond) and semiconducting (~0.1at%B and N, BN-diamond) doped-diamond films.
Daisuke Saito, Eiki Kabasawa, H. Adachi, Hideo Isshiki, J.J. Jia, Jin Nakamura, Nobuyoshi Yamada, P. Skytt, Rupert C. C. Perera, Shigemi Yugo, Yasuaki Einaga   +10 more
core   +1 more source

Degree-based topological properties of borophene sheets

Main Group Metal Chemistry
This study examines many innovative topological numbers and establishes mathematical interpretations for boron clusters and borophene coverings. The general Randic index, arithmetic index, and Albertson index are discussed in this work for the alpha ...
Al Khabyah Ali, Ahmad Ali, Azeem Muhammad, Koam Ali N. A.   +3 more
doaj   +1 more source

Arene C–H borylation strategy enabled by a non-classical boron cluster-based electrophile [PDF]

, 2023
Sangmin Kim, Joseph W. Treacy, Yessica Nelson, Jordan A. M. Gonzalez, Milan Gembický, K. N. Houk, Alexander M. Spokoyny   +6 more
openalex   +1 more source

Modeling of the transient interstitial diffusion of implanted atoms during low-temperature annealing of silicon substrates

, 2011
It has been shown that many of the phenomena related to the formation of "tails" in the low-concentration region of ion-implanted impurity distribution are due to the anomalous diffusion of nonequilibrium impurity interstitials.
A.P. Kavaliova, Bazizi, Blood, Bracht, Camillo-Castillo, Camillo-Castillo, Cowern, Cowern, Cristiano, Crowder, Davies, De Salvador, De Salvador, Dearnaley, Duffy, Eaglesham, Fan, Faney, Fedotov, Ferri, Gable, Gamo, Gamo, Gouyé, Graoui, Haddara, Hamilton, Hofker, Hopstaken, Jain, Kizilyalli, Lallement, Lerch, Lerch, Lindsay, Marcon, Martin-Bragado, Mathiot, Michel, Michel, Mirabella, Mirabella, Mirabella, Moline, Morehead, O.I. Velichko, Ohuchi, Orlowski, Pawlak, Pawlak, Pawlak, Philippe, Pichler, Ryssel, Sadigh, Schulz, Shao, Shimizu, Solmi, Solmi, Stolk, Suzuki, Tomita, Uematsu, Van Wieringen, Velichko, Velichko, Velichko, Velichko, Velichko, Velichko, Velichko, Velichko, Windl, Woon, Yeong   +75 more
core   +1 more source

Interpreting Ring Currents from Hückel-Guided σ- and π-Electron Delocalization in Small Boron Rings

Molecules
The aromaticity of small boron clusters remains under scrutiny due to persistent inconsistencies between magnetic and electronic descriptors. Here, we reexamine B3−, B3+, B4, B42+, and B42− using a multidimensional approach that integrates Adaptive ...
Dumer S. Sacanamboy, Williams García-Argote, Rodolfo Pumachagua-Huertas, Carlos Cárdenas, Luis Leyva-Parra, Lina Ruiz, William Tiznado   +6 more
doaj   +1 more source

Boron clustering in implanted NiSi

Scripta Materialia, 2011
B redistribution in a B-implanted polycrystalline NiSi layer has been investigated using atom probe tomography and secondary ion mass spectrometry. The B accumulations observed at the SiO2/NiSi interface and in the NiSi bulk are due to B clustering.
A. Portavoce, I. Blum, D. Mangelinck, K. Hoummada, L. Chow, V. Carron, J.L. Lábár   +6 more
openaire   +2 more sources