Results 51 to 60 of about 201,644 (307)

Catalytic ozonation of ketoprofen by defective boron nitride

open access: yesCatalysis Communications, 2023
This study focuses on the feasibility of boron nitride as a catalyst for ozonation of ketoprofen. The defective boron nitride was prepared by calcination of boric acid and melamine and characterized by XRD, SEM, FT-IR, XPS, temperature programmed ...
Shuxuan Feng   +5 more
doaj   +1 more source

Functionalizing Micro‐to‐Mesoscopic Electrode Architectures for Regulating Electron Transfer Behaviors in Electrocatalysis

open access: yesAdvanced Functional Materials, EarlyView.
A systematic review is conducted to assess the influence of electrode architecture across micro‐ to mesoscopic length scales on electron‐transfer pathways in electrocatalysis. We discuss the structure‐activity relationships in electrocatalytic applications, including resource recovery and environmental remediation, and provide cost‐effective, efficient
Manshu Zhao   +6 more
wiley   +1 more source

Preparation of boron nitride fiber by organic precursor method

open access: yesResults in Physics, 2017
In this paper, boron nitride polymer precursor was made by boric acid, melamine, twelve sodium alkyl sulfate as raw materials and pure water as medium which is heated to 70 °C. Boron nitride precursor polymer was soluble in formic acid solution.
Yingying Zhou   +5 more
doaj   +1 more source

Functionalization of boron nitride nanotubes for applications in nanobiomedicine

open access: yes, 2016
Chemical approaches for the functionalization of boron nitride nanotubes (BNNTs) are discussed, including covalent functionalization, noncovalent functionalization, defect reaction, and inner filling BNNTs, in regards of the multiple utility of these ...
Golberg, Dmitri   +9 more
core   +1 more source

Binary‐to‐Ternary Reconfigurable Transistors Using Plasma‐Assisted MoS2

open access: yesAdvanced Functional Materials, EarlyView.
A binary‐to‐ternary reconfigurable transistor is demonstrated using a dual‐gated molybdenum disulfide homojunction with localized O2 plasma treatment. The device exhibits on/intermediate and intermediate/off current ratios of 102 and 104, respectively, and the intermediate state is electrically tunable in the ternary mode.
Yeonghyeon Ko   +7 more
wiley   +1 more source

Nano- and Macrotribological Properties of Nanoperiod Multilayer Films Deposited by Bias Sputtering

open access: yesJournal of Nanotechnology, 2012
Carbon and boron nitride nanoperiod (C/BN)n, boron nitride and carbon (BN/C)n, carbon nitride and boron nitride nanoperiod (CN/BN)n, and boron nitride and carbon nitride (BN/CN)n ]multilayer films with a 4-nm-period multilayer structure were deposited by
Shojiro Miyake, Mei Wang
doaj   +1 more source

Investigation of the adhesive properties of composites based on polyimide varnish and copper oxide, boron nitride and technical diamond powders [PDF]

open access: yesModern Electronic Materials
The article describes the preparing process for composites with a polyimide varnish PILK-2B matrix, which filled with particles of technical diamond, copper oxide, cubic boron nitride and hexagonal boron nitride for use in redistribution layers during ...
Igor A. Belyakov   +5 more
doaj   +3 more sources

Nonoxide Sol-Gel Synthesis of Terbium-Doped Silicon Nitride Phosphors

open access: yes, 2009
Exposure of solutions of Tb(N(SiMe3)2)3 with SiCl(NEt2)3 in tetrahydrofuran to dry ammonia results in polymeric xerogels. Heating these gels in ammonia leads to amorphous Tb:SiNx phosphors that exhibit bright green luminescence under UV irradiation.
Hector, Andrew L.   +3 more
core   +1 more source

Spin Dynamics in the van der Waals Ferromagnet CrTe2 Engineered by Niobium Doping

open access: yesAdvanced Functional Materials, EarlyView.
Spin‐dynamic magnetic properties of van der Waals (vdW) ferromagnet 1T‐CrTe2 are tuned via niobium (Nb) as Cr1‐xNbxTe2 (x = 0–0.2). Nb doping enables wide‐band tuning of the resonance frequency from 40 GHz down to the few‐GHz regime, accompanied by a moderate increase in the Gilbert damping from ∼0.066 to ∼0.14.
Dhan Raj Lawati   +16 more
wiley   +1 more source

Effect of substitutional defects on resonant tunneling diodes based on armchair graphene and boron nitride nanoribbons lateral heterojunctions

open access: yesBeilstein Journal of Nanotechnology, 2020
A nanometer-scaled resonant tunneling diode based on lateral heterojunctions of armchair graphene and boron nitride nanoribbons, exhibiting negative differential resistance is proposed.
Majid Sanaeepur
doaj   +1 more source

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