Results 111 to 120 of about 2,023,803 (345)
Impulse Breakdown Characteristics of Main Gap in the Presence of a Local Discharge
Journal of Applied Science & Process Engineering, 2019 The characteristics of impulse breakdown voltages and the influence of the position of third electrode in air gap are investigated experimentally to study the parameters influencing the breakdown voltage in the presence of metallic objects around the ...
Abderrahmane Settaouti
doaj +1 more source
Advanced Engineering Materials, EarlyView.The tribological behavior of 100Cr6 steel spheres textured via Vickers microindentation is evaluated under lubricated sliding by varying both dimple size and density. Fine and dense textures significantly reduce friction across all lubrication regimes, while large dimples increase it.
Farideh Davoodi +3 more
wiley +1 more source
High Breakdown Voltage P-GaN Gate HEMTs with Threshold Voltage of 7.1 v
In this study, we proposed an enhanced mode P-GaN/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) by combining thermal oxidation treatment of P-GaN with atomic layer deposition (OTALD) prior to gate metal deposition.
Cui, P +10 more
core +1 more source
, 2016 Sn-doped gallium oxide (Ga2O3) wrap-gate fin-array field-effect transistors (finFETs) were formed by top-down BCl3 plasma etching on a native semi-insulating Mg-doped (100) β-Ga2O3 substrate.
K. Chabak +14 more
semanticscholar +1 more source
Advanced Engineering Materials, EarlyView.This study explores the lightweight potential of laser additive‐manufactured NiTi triply periodic minimal surface sheet lattices. It systematically investigates the effects of relative density and unit cell size on surface quality, deformation recovery, compression behavior, and energy absorption.
Haoming Mo +3 more
wiley +1 more source
High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer
Normally off beta-phase gallium oxide (β-Ga2O3) metal-oxide field-effect transistors (MOSFETs) on GaN-on-Si substrates were fabricated with a threshold voltage (VTH) of 3 V. β-Ga2O3 thin films were deposited using pulsed laser deposition.
Kumar, Mritunjay +6 more
core +1 more source
, 2017 The insulating performance of oil is vulnerable to particles especially the conductive particles. This paper investigated the influence of copper particles of micrometer size on the breakdown strength and frequency-dependent properties of vegetable oil ...
Jing Zhang +4 more
semanticscholar +1 more source
Advanced Engineering Materials, EarlyView.The corrosion performance of AlSi7Mg and AlSi10Mg alloys produced through selective laser melting (SLM) was examined under compressive stress in a chloride environment. Electrochemical analyses, including open‐circuit potential (OCP), potentiodynamic polarization (CPP), and electrochemical impedance spectroscopy (EIS), were complemented by scanning ...
Femi John Akinfolarin +2 more
wiley +1 more source
, 2009 Electrical treeing is one of the main reasons for long term degradation of polymeric materials used in high voltage ac applications. In this paper we report on an investigation of electrical tree growth characteristics in XLPE samples from a commercial ...
Tham, C H, Chen, George
core
, 2016 This paper is aimed at studying the breakdown voltage and minimum ignition energy of sparking system for the free-piston linear generator (FPLG). Combing the ignition characteristics and demands specifically for the FPLG system, the breakdown voltage and
Chi Zhang +12 more
core +1 more source