Results 101 to 110 of about 982,593 (292)
β‐Catenin/c‐Myc Axis Modulates Autophagy Response to Different Ammonia Concentrations
Ammonia, detoxified by the liver into urea and glutamine, impacts autophagy differently at varying levels. Low ammonia activates autophagy via c‐Myc and β‐catenin, while high levels suppress it. Using Huh7 cells and Spf‐ash mice, c‐Myc's role in cytoprotective autophagy is revealed, offering insights into hyperammonemia and potential therapeutic ...
S. Sergio +11 more
wiley +1 more source
Low‐cycle fatigue damage in Mn–Mo–Ni reactor pressure vessel steel is examined using a combined electron backscatter diffraction and positron annihilation lifetime spectroscopy approach. The study correlates texture evolution, dislocation substructure development, and vacancy‐type defect formation across uniform, necked, and fracture regions, providing
Apu Sarkar +2 more
wiley +1 more source
High Breakdown Voltage P-GaN Gate HEMTs with Threshold Voltage of 7.1 v
In this study, we proposed an enhanced mode P-GaN/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) by combining thermal oxidation treatment of P-GaN with atomic layer deposition (OTALD) prior to gate metal deposition.
Cui, P +10 more
core +1 more source
Thermomechanical fatigue tests of laser beam powder bed fusion (PBF‐LB) Inconel 718 show that the additively manufactured material reaches almost the lifetimes of conventionally‐rolled material under no‐dwell conditions. Introducing dwell times at the maximum temperature markedly reduces the lifetimes due to pronounced grain boundary sliding associated
Stefan Guth +6 more
wiley +1 more source
High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer
Normally off beta-phase gallium oxide (β-Ga2O3) metal-oxide field-effect transistors (MOSFETs) on GaN-on-Si substrates were fabricated with a threshold voltage (VTH) of 3 V. β-Ga2O3 thin films were deposited using pulsed laser deposition.
Kumar, Mritunjay +6 more
core +1 more source
3 kV monolithic bidirectional GaN HEMT on sapphire
3 kV breakdown voltage was demonstrated in monolithic bidirectional Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) having potential applications in 1200 V or 1700 V class power converters. The on-resistance of the fabricated transistors
Md Tahmidul Alam +4 more
doaj +1 more source
Construction and electrical properties of 700 V aluminium polymer electrolytic capacitors
A process for the construction of a high voltage aluminium polymer electrolytic capacitor with operation voltages of up to 700 V is presented in this paper.
Tim Kruse +4 more
doaj +1 more source
Towards Defect Phase Diagrams: From Research Data Management to Automated Workflows
A research data management infrastructure is presented for the systematic integration of heterogeneous experimental and simulation data required for defect phase diagrams. The approach combines openBIS with a companion application for large‐object storage, automated metadata extraction, provenance tracking and federated data access, thereby supporting ...
Khalil Rejiba +5 more
wiley +1 more source
GaN/Si Heterojunction VDMOS with High Breakdown Voltage and Low Specific On-Resistance. [PDF]
Yang X, Duan B, Yang Y.
europepmc +1 more source
Reproduction of stacking fault energy calculations from literature with a semi‐automated large language model‐assisted extraction procedure: extraction of simulation protocol, atomistic structures, computational parameters, and reported results, ontology alignment, knowledge graph construction and, finally, recomputation forvalidation.
Sepideh Baghaee Ravari +5 more
wiley +1 more source

