Results 81 to 90 of about 49,704 (264)
Impulse dielectric behaviour of dry air in sphere-plane gap
The Journal of Engineering, 2019 The dielectric strength of dry air is lower than that of SF(6), so it is very difficult to use dry air in extra-high-voltage-class gas-insulated equipment.
Zilu Jin +4 more
doaj +1 more source
Low breakdown voltage Schottky diode as voltage regulator
Electronics Letters, 1981 Experimental evidence is given showing that Ag-n-Si Schottky diodes with resistivity about 40 mΩcm have steeper reverse breakdown characteristics than corresponding low-voltage p-n junction regulator diodes fabricated by local epitaxy. Avalanche multiplication in such a diode starts at 1.7 V, and the device has a low positive temperature coefficient of
R.S. Popović, D.A. Mladenović
openaire +1 more source
Advanced Engineering Materials, EarlyView.Thermomechanical fatigue tests of laser beam powder bed fusion (PBF‐LB) Inconel 718 show that the additively manufactured material reaches almost the lifetimes of conventionally‐rolled material under no‐dwell conditions. Introducing dwell times at the maximum temperature markedly reduces the lifetimes due to pronounced grain boundary sliding associated
Stefan Guth +6 more
wiley +1 more source
Low‐Angle Grain Boundaries and Re‐Segregation in Single‐Crystalline Ni‐Base Superalloys
Advanced Engineering Materials, EarlyView.This work demonstrates that Re‐segregation at low‐angle grain boundaries (LAGBs) in Ni‐base superalloys is influenced by misorientation angle. Advanced microscopy and atom probe tomography reveal that higher misorientation angles increases Re‐segregation.
Alireza B. Parsa +9 more
wiley +1 more source
Towards Defect Phase Diagrams: From Research Data Management to Automated Workflows
Advanced Engineering Materials, EarlyView.A research data management infrastructure is presented for the systematic integration of heterogeneous experimental and simulation data required for defect phase diagrams. The approach combines openBIS with a companion application for large‐object storage, automated metadata extraction, provenance tracking and federated data access, thereby supporting ...
Khalil Rejiba +5 more
wiley +1 more source
3 kV monolithic bidirectional GaN HEMT on sapphire
Applied Physics Express3 kV breakdown voltage was demonstrated in monolithic bidirectional Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) having potential applications in 1200 V or 1700 V class power converters. The on-resistance of the fabricated transistors
Md Tahmidul Alam +4 more
doaj +1 more source
Construction and electrical properties of 700 V aluminium polymer electrolytic capacitors
Power Electronic Devices and ComponentsA process for the construction of a high voltage aluminium polymer electrolytic capacitor with operation voltages of up to 700 V is presented in this paper.
Tim Kruse +4 more
doaj +1 more source
Advanced Engineering Materials, EarlyView.Mg–Zn composites with a thickness of 0.21 mm were fabricated using roll bonding of a kirigami‐patterned Mg alloy inlay within a Zn matrix. Thermal activation following this process led to the formation of tailored intermetallic structures, which provided the composite with enhanced flexural strength.
Yaroslav Frolov +4 more
wiley +1 more source
Advanced Engineering Materials, EarlyView.Phase‐field simulations coupled with dislocation‐density‐based crystal plasticity modeling reproduce γ′ rafting behavior in single‐crystal Ni‐based superalloys under varied loading conditions. The model captures both macroscopic creep and microscopic morphology evolution, with results matching high‐temperature creep experiments.
Micheal Younan +5 more
wiley +1 more source
GaN/Si Heterojunction VDMOS with High Breakdown Voltage and Low Specific On-Resistance. [PDF]
Micromachines (Basel), 2023 Yang X, Duan B, Yang Y.
europepmc +1 more source