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Uncertainty of Soil Breakdown Voltage
Aim of this work is the analysis of the components of uncertainty and the estimation of the uncertainty regarding the determination of the breakdown voltage associated with the soil critical electric field. For that reason, series of measurements have been conducted by inducing impulse voltages to soil samples with different moisture content in order ...
Fani E. Asimakopoulou +2 more
openaire +2 more sources
A breakdown voltage doubler for high voltage swing drivers
A novel breakdown voltage (BV) doubler is introduced that makes it possible to generate high output voltage swings using transistors with low breakdown voltages. The timing analysis of the stage is used to optimize its dynamic response. A 10 Gb/s optical modulator driver with a differential output voltage swing of 8 V on a 50 /spl Omega/ load was ...
Sam Mandegaran, Ali Hajimiri
openaire +3 more sources
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True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching
IEEE Electron Device Letters, 2021This work studies the dynamic breakdown voltage (BV) and overvoltage margin of a 650-V-rated commercial GaN power HEMT in hard switching. The dynamic BV measured in the hard switching circuits is over 1.4 kV, being 450 V higher than the static BV ...
J. P. Kozak +5 more
semanticscholar +1 more source
ACS Applied Materials and Interfaces, 2022
The comparatively high coercive field in Hf0.5Zr0.5O2 (HZO) and other HfO2-based ferroelectric thin films leads to two critical challenges for their application in embedded ferroelectric memory: high operating voltage due to a large thickness-field ...
K. Toprasertpong +6 more
semanticscholar +1 more source
The comparatively high coercive field in Hf0.5Zr0.5O2 (HZO) and other HfO2-based ferroelectric thin films leads to two critical challenges for their application in embedded ferroelectric memory: high operating voltage due to a large thickness-field ...
K. Toprasertpong +6 more
semanticscholar +1 more source
Dynamic Breakdown Voltage of GaN Power HEMTs
International Electron Devices Meeting, 2020This work develops a new method to measure the transient breakdown voltage (BV) of a non-avalanche device in ultra-short pulses, based on the unclamped inductive switching (UIS) setup.
R. Zhang +5 more
semanticscholar +1 more source
Single and multi-fin normally-off Ga2O3 vertical transistors with a breakdown voltage over 2.6 kV
International Electron Devices Meeting, 2019We demonstrate record-high performance in normally-off single and multi-fin b-Ga2O3 vertical power transistors. The effective channel mobility is significantly improved up to ~130 cm2/V•s with a post-deposition annealing process. With a fin-channel width
Wenshen Li +5 more
semanticscholar +1 more source
A field-plated Ga2O3 MOSFET with near 2-kV breakdown voltage and 520 mΩ · cm2 on-resistance
Applied Physics Express, 2019A composite field-plated Ga2O3 MOSFET with highly doped ohmic-capping layer is fabricated. An output current of 20 mA mm−1 and on-resistance of 520 mΩ · cm2 shows big improvement upon the previous experiment on similar field plated devices. The breakdown
Ke Zeng, Abhishek Vaidya, U. Singisetti
semanticscholar +1 more source
Composites Science And Technology, 2018
Layer structured high-performance thermal management materials via integrating the advantages of boron nitride (BN, electrically insulating) and graphene nanoplatelets (GNPs, highly thermally conductive) as fillers were realized by a facile and scalable ...
Chang-Ping Feng +8 more
semanticscholar +1 more source
Layer structured high-performance thermal management materials via integrating the advantages of boron nitride (BN, electrically insulating) and graphene nanoplatelets (GNPs, highly thermally conductive) as fillers were realized by a facile and scalable ...
Chang-Ping Feng +8 more
semanticscholar +1 more source

