Results 281 to 290 of about 2,023,803 (345)

Relationship between the interfacial ramped DC breakdown voltage and the morphology of the XLPE/SiR interface

IEEE transactions on dielectrics and electrical insulation, 2019
Insulations enhanced with multilayer dielectrics are widely used in many applications. However, the interfaces between the dielectric layers are the weakest regions. Interfacial breakdown occurs frequently at the XLPE/SiR interfaces of DC cable joints or
Bin Zhu, Z. Jia, Hao Hu, X. Ouyang, Xilin Wang   +4 more
semanticscholar   +1 more source

Voltage breakdown characteristics of microwave antennas

IRE International Convention Record, 1959
At low pressures, antennas are susceptible to voltage breakdown. In the case of missiles, for example, there are indications that very low power is sufficient to initiate and maintain breakdown. Since it is essential that the system performance is not interrupted for high-altitude operation, an experimental investigation has been made to study the ...
J. Chown, W. Scharfman, T. Morita
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Resistor networks with distributed breakdown voltages

Physical Review A, 1991
As a primitive model for structural breakdown in elastic media, we analyze the failure of random resistor-fuse networks with various distributions of properties. We show that variations in breakdown voltage have a more significant effect than variations in resistance values. This is analogous to the fiuid-displacement problem [D.Y.C. Chan, B. D. Hughes,
, Chan, , Hughes, , Paterson, , Sirakoff
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MOSFET drain breakdown voltage

IEEE Electron Device Letters, 1986
The grounded-gate or gate-assisted drain breakdown voltage of n-channel MOSFET's has been characterized for wide ranges of oxide thickness and substrate doping concentration. Two distinct regimes, one being channel-doping limited and the other being oxide-thickness limited, have been identified.
Chan, T. Y., Hu, C., Feng, Wu-Shiung
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Breakdown voltage of high-voltage bipolar transistors

Solid-State Electronics, 1991
Abstract An empirical expression for open-base bulk breakdown voltage of an epitaxial n+pn−n+ bipolar transistor as a function of collector doping density and common-emitter current gain is useful in the design of the collector region of the transistor.
M.M. Shahidul Hassan, Golam Rasul Chowdhury, M. Zahirul Alam   +2 more
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Effect of Ultraviolet on Breakdown Voltage

Transactions of the American Institute of Electrical Engineers, 1935
The effect of ultraviolet light upon the breakdown voltage of sphere gaps subjected to impulse voltages is considered in this paper. It is shown that, especially for the smaller gaps and corresponding lower voltages, more accurate voltage measurements result when ultraviolet light is used.
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Voltage Breakdown in Random Composites

Advanced Engineering Materials, 2003
Voltage breakdown is a strongly localized phenomenon in random‐microstructure composites because the different dielectric constants of metal and polymer matrix turn a uniform external field across the structure into spatially non‐uniform local fields.
A.A. Gusev, O.A. Guseva
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An investigation of breakdown voltage in AMTECs

AIP Conference Proceedings, 2002
Experiments are conducted to investigate the DC electrical breakdown voltage in cesium vapor between two planner molybdenum electrodes, 1.6 cm in diameter, separated by a 0.5 mm gap, and relate the results to the potential electrical breakdown on the cathode side of Alkali Metal Thermal-to-Electric Converters (AMTECs).
Yoichi Momozaki, Mohamed S. El-Genk
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High-Voltage p-GaN HEMTs With OFF-State Blocking Capability After Gate Breakdown

IEEE Electron Device Letters, 2019
In this letter, we report high-performance p-GaN HEMTs on Si with robust gate operation. For the first time, the preserved OFF-state drain blocking capability has been demonstrated in p-GaN HEMTs after forward gate breakdown. Benefitting from the reduced
Huaxing Jiang, Renqiang Zhu, Qifeng Lyu, K. Lau   +3 more
semanticscholar   +1 more source

Empirical model of MOSFET breakdown voltages

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1993
An additive model of drain-to-source current of a MOS transistor in the breakdown region is presented for the circuit-simulation SPICE program. An additional drain-to-source current is described by mixed quadratic and exponential formulas. Continuity of current and its first derivatives is assured.
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