Results 301 to 310 of about 232,131 (335)
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LTCC Breakdown Voltage Investigation
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT), 2016Abstract High voltage properties of the LTCC (Low Temperature Co-Fired Ceramics) cofired ceramic tape are presented. Chauvin Arnoux C.A. 6555 insulation tester is used to measure the leakage current and the resistance. Measurement is possible up to 15 kV. The DuPont 951 test structures are manufactured.
Mateusz Dorczynski +3 more
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1967
Abstract : The analysis of the results of the preliminary experimental program has been pursued with emphasis on the visible radiation from vacuum gaps. The results are consistent with both thermal and transition radiation phenomena. The 320 kv system has been assembled and the components necessary for the pilot experiment checked out, viz.
A. Watson, M. J. Mulcahy, W. R. Bell
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Abstract : The analysis of the results of the preliminary experimental program has been pursued with emphasis on the visible radiation from vacuum gaps. The results are consistent with both thermal and transition radiation phenomena. The 320 kv system has been assembled and the components necessary for the pilot experiment checked out, viz.
A. Watson, M. J. Mulcahy, W. R. Bell
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Voltage Breakdown in Random Composites
Advanced Engineering Materials, 2003Voltage breakdown is a strongly localized phenomenon in random‐microstructure composites because the different dielectric constants of metal and polymer matrix turn a uniform external field across the structure into spatially non‐uniform local fields.
A.A. Gusev, O.A. Guseva
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Voltage breakdown characteristics of microwave antennas
IRE International Convention Record, 1959At low pressures, antennas are susceptible to voltage breakdown. In the case of missiles, for example, there are indications that very low power is sufficient to initiate and maintain breakdown. Since it is essential that the system performance is not interrupted for high-altitude operation, an experimental investigation has been made to study the ...
J. Chown, W. Scharfman, T. Morita
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Resistor networks with distributed breakdown voltages
Physical Review A, 1991As a primitive model for structural breakdown in elastic media, we analyze the failure of random resistor-fuse networks with various distributions of properties. We show that variations in breakdown voltage have a more significant effect than variations in resistance values. This is analogous to the fiuid-displacement problem [D.Y.C. Chan, B. D. Hughes,
, Chan, , Hughes, , Paterson, , Sirakoff
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Breakdown voltage of high-voltage bipolar transistors
Solid-State Electronics, 1991Abstract An empirical expression for open-base bulk breakdown voltage of an epitaxial n+pn−n+ bipolar transistor as a function of collector doping density and common-emitter current gain is useful in the design of the collector region of the transistor.
M.M. Shahidul Hassan +2 more
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Avalanche breakdown voltage of In0.53Ga0.47As
Journal of Applied Physics, 2002Avalanche breakdown voltages were determined for a series of In0.53Ga0.47As p-i-n diodes with i-region thicknesses ranging from 0.4 to 4.79 μm using measurements of reverse dark current and phase-sensitive photomultiplication. Despite its narrower bandgap In0.53Ga0.47As is found to have a very similar breakdown voltage to GaAs.
J. S. Ng +3 more
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Effect of Ultraviolet on Breakdown Voltage
Transactions of the American Institute of Electrical Engineers, 1935The effect of ultraviolet light upon the breakdown voltage of sphere gaps subjected to impulse voltages is considered in this paper. It is shown that, especially for the smaller gaps and corresponding lower voltages, more accurate voltage measurements result when ultraviolet light is used.
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Goal-Oriented Adaptivity for Voltage Breakdown Prediction
IEEE Transactions on Magnetics, 2018An innovative approach has been recently proposed for the voltage breakdown prediction in high-voltage systems, insulated by large vacuum gaps. This approach is based on complementary geometric formulations for electrostatics coupled to the analytical solution of the equations of motion for charged particles.
Paolo Bettini +4 more
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Breakdown voltage modeling in mesa power devices
Physica Status Solidi (a), 1983A mathematical model is constructed to allow the study of the influence of surface phenomena on the behavior of high voltage reverse biased PN junction when the angle formed by the surface plane and the junction has any value. Methods of determination of the breakdown potential in terms of bulk and surface parameters such as surface charge and ...
J. P. Gourret, J. Paille
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