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Growth and characterization of detector-grade CdZnTeSe by horizontal Bridgman technique

Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXI, 2019
We have investigated the effect of incorporation of Se into CdZnTe (CZT) matrix on x-ray response of single crystal direct conversion detectors. We used horizontal Bridgman technique for crystal growth. We have characterized the crystals using an array of diagnostics including photo-induced current transient spectroscopy (PICTS), electric field ...
Aharon Yakimov   +3 more
openaire   +1 more source

A technique for measuring the heat transfer coefficient inside a Bridgman furnace

Journal of Crystal Growth, 1993
Knowledge of the amount of heat that is conducted, advected and radiated between an ampoule and the furnace is important for understanding vertical Bridgman crystal growth. This heat transfer depends on the temperature, emissivities and geometries of both the furnace and ampoule, as well as the choice of ambient gas inside the furnace.
W. Rosch   +5 more
openaire   +1 more source

Low dislocation density GaAs grown by the vertical Bridgman technique

Journal of Materials Research, 1990
We have developed a new growth process for GaAs that combines advantages found in several methods currently in commercial use, while at the same time minimizing many of the problems inherent in these presently used processes. The new technique, a form of vertical Bridgman (VB) growth, is capable of producing either doped (semiconducting) or undoped ...
R. E. Kremer   +3 more
openaire   +1 more source

Nanohardness and Young’s modulus of YBCO samples textured by the Bridgman technique

Nanotechnology, 2007
Mechanical properties of the orthorhombic phase of YBa2Cu3O7−δ (Y123) at room temperature have been investigated at different applied loads: 5, 10, 30 and 100 mN using a nanoindentation technique. This study was carried out for different monodomains on the (001) plane for textured Bridgman samples with dispersed particles of Y211 as pinning centres ...
J J Roa   +4 more
openaire   +1 more source

Synthesis and single crystal growth of SnS by the Bridgman‐Stockbarger technique

Crystal Research and Technology, 2013
AbstractSnS is a promising candidate as PV absorber material according to the material properties and the Loferski diagram, but despite the numerous publications on this material, the intrinsic material properties are widely unknown and the theoretical possible values for efficiency are still far away from those achieved in reality.
Sorgenfrei, Tina   +3 more
openaire   +2 more sources

Charge transport properties of Tl2GaInSe4 prepared by Bridgman technique

Superlattices and Microstructures, 2014
Abstract Electronic transport properties of Tl 2 GaInSe 4 prepared by Bridgman technique have been investigated by Dc electrical conductivity and Hall coefficient measurements. Tl 2 GaInSe 4 crystal was prepared by a special design based on Bridgman technique.
openaire   +1 more source

Vertical bridgman techniques to homogenize zinc composition of CdZnTe substrates

Journal of Electronic Materials, 1995
In order to improve the Zn homogeneity along the axial direction of CdZnTe boule, we have employed a modified Bridgman technique using a (Cd, Zn) alloy source in communication with the melt, whose temperature has been gradually changed from 800 to 840°C during growth. Electron probe microanalysis (EPMA) measurements of Zn composition in the boule shows
T. S. Lee   +8 more
openaire   +1 more source

Magnetic Spinel Single Crystals by Bridgman Technique

1978
In connection with the recent trend of making advantageous use of single crystals of magnetic spinel for the design and manufacture of electronic devices and components, interest has been focused on the Bridgman process of growing crystals with particular emphasis on growing large crystals or improving the products in quality and mass-productivity.
openaire   +1 more source

Application of eddy current technique to vertical bridgman growth of CdZnTe

Journal of Electronic Materials, 1996
The eddy current technique was used to reveal the interface shape during vertical Bridgman growth of CdZnTe and to follow changes in the properties of the solidified ingot as it was cooled to room temperature after growth. Experiments were performed where partially solidified charges were decanted to show the interface shape.
R. Shetty, C. K. Ard, J. P. Wallace
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Distribution of Te in GaSb grown by Bridgman technique under microgravity

Journal of Crystal Growth, 2000
Te concentration in GaSb grown under microgravity was measured by spatially resolved photoluminescence (SRPL). For this purpose, a calibration curve is experimentally obtained to give a relationship between Te concentration and PL energy. It was found that after the growth starts the Te concentration drops at the melted and unmelted interface and ...
T Nakamura, T Nishinaga, P Ge, C Huo
openaire   +1 more source

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