Results 181 to 190 of about 3,731,621 (212)

Single Crystal Growth of Yttrium Orthoferrite by a Seeded Bridgman Technique

Journal of Applied Physics, 1971
Single crystals of yttrium orthoferrite (YFeO3) 15 mm in diameter and 28-mm long have been grown from pure Y2O3–Fe2O3 melts contained in platinum crucibles. At the melting point of YFeO3, 1680±5°C, the equilibrium oxygen pressure over the Y2O3–Fe2O3 system is approximately one atmosphere, hence a modified Bridgman technique was used.
S. L. Blank, L. K. Shick, J. W. Nielsen
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Characterization of high Zn content Cd0.87Zn0.13Te0.98Se0.02 grown using Bridgman technique

Applied Radiation and Isotopes
CdZnTe (CZT) is a promising commercial material used as a room-temperature operating semiconductor detector for gamma-ray detection. Recently, CdZnTeSe (CZTS) detectors improved upon the properties of CZT by improving homogeneity and reducing defect properties, thereby enabling higher production yield of high-quality crystals.
Yonghoon Kim, Juyoung Ko, Jangwon Byun, Jiwon Seo, Hye Min Park, Beomjun Park   +5 more
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Segregation in Pb1−xSnx Te during solidification by the Bridgman technique

Journal of Materials Science, 1979
The influence of the growth parameters on the concentration gradient of Pb1−xSnxTe monocrystals grown by the vertical Bridgman technique is described. The concentration profiles of all three constituents (Pb, Sn, Te) have been analysed in ingots having different Pb-Sn ratios and grown under different conditions.
V. Fano, R. Pergolari, L. Zanotti
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Boron oxide fully encapsulated CdZnTe crystals grown by the vertical Bridgman technique

Journal of Crystal Growth, 2007
One of the main problems affecting the vertical Bridgman growth of CdZnTe crystals is the crystal-crucible contact. In this work, we show that it is possible to avoid this interaction by inserting a stable boron oxide liquid layer between the crucible and the melt.
A. Zappettini, M. Zha, PAVESI, Maura, L. Zanotti   +3 more
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Charge carrier transport mechanisms in CdZnTe detectors grown by the vertical Bridgman technique

2015 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2015
In this work, we report on the results of electrical characterization of CdZnTe (CZT) detectors, with gold electroless contacts, grown by the boron oxide encapsulated vertical Bridgman technique (B-VB), currently produced at IMEM-CNR (Parma, Italy). The detectors, with different thicknesses (1 and 2.5 mm), have the same electrode layout: the anode is a
TURTURICI, Accursio Antonio, ABBENE, Leonardo, GERARDI, Gaetano, Benassi, G., Calestani, D., Zambelli, N., RASO, Giuseppe, Zappettini, A., PRINCIPATO, Fabio   +8 more
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Studies on the growth and characterization of benzimidazole single crystals—vertical Bridgman technique

Journal of Crystal Growth, 2006
Abstract The potential organic nonlinear optical (NLO) materials of benzimidazole single crystals have been grown by vertical Bridgman technique by optimizing the growth conditions. The crystalline perfection has been studied by high resolution X-ray diffractometry (HRXRD).
N. Vijayan, G. Bhagavannarayana, N. Balamurugan, R. Ramesh Babu, K.K. Maurya, R. Gopalakrishnan, P. Ramasamy   +6 more
openaire   +1 more source

Improved Bridgman technique for the growth of AgGaSe/sub 2/ single crystals

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105), 2002
AgGaSe/sub 2/ crystal growth has been realized by an improved Bridgman technique with only a one-zone vertical growth furnace. The technique is to make the solid-liquid interface move from the bottom to the top of the AgGaSe/sub 2/ melting polycrystalline materials to grow AgGaSe/sub 2/ single crystals by controlling the growth temperature. Boules with
null Xie Guangzhong, null Jianng Yadong, null Wu Zhiming, null Zhu Shifu   +3 more
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Transport properties of undoped Cd0.9Zn0.1Te grown by high pressure bridgman technique

Journal of Electronic Materials, 2000
The electron drift mobility of undoped Cd0.9Zn0.1Te grown by high-pressure Bridgman method is measured by a time-of-flight technique. The sample shows a room temperature mobility and mobility lifetime product of 950 cm2/Vs and 1.6 × 10−4cm2/V, respectively. The mobility increases monotonically with decreasing temperature to 3000 cm2/Vs at 100 K.
Kazuhiko Suzuki, S. Seto, A. Iwata, M. Bingo, T. Sawada, K. Imai   +5 more
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Bridgman–Stockbarger Technique

2021
Mark Lifshotz, Alan Symmons
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SURFACE MORPHOLOGY and GaSe:In BINARY SEMICONDUCTOR GROWN BY BRIDGMAN/STOCKBARGER TECHNIQUE

2015
The importance of semiconductors paving the way fornano technology has recently been increased. But, producing them easily andhaving their vast application fields are most important. For that reason, thecrystals having wide application field and their characteristics which arefully determinated are needed.
Gürbulak, Bekir, Şata, Mehmet, Duman, Songül, Erzenoğlu, Salih Zeki, ASHKHASI, Afsoun, Öztırpan, Yasin, Akça, Burcu   +6 more
openaire   +2 more sources