Results 171 to 180 of about 301,180 (283)

Ultra-broadband wireless rectification and frequency mixing via the nonlinear Hall effect in TaIrTe₄. [PDF]

Nat Commun
Hu F, Lei J, Zhao S, Yang Q, Dessmann N, Janssen T, Zhang C, Yu H, Yu P, Kirilyuk A, Yang H.   +10 more
europepmc   +1 more source

Recent Advances in Programmable Metasurfaces and Meta‐Devices

Advanced Electronic Materials, EarlyView.
Programmable metasurfaces enable various novel functionalities by dynamically tuning electromagnetic wavefronts. This article provides a comprehensive review of recent advances in microwave and terahertz programmable metasurfaces, covering electrical, thermal, optical, and mechanical control mechanisms.
Linda Shao, Chong He, Nan Wang, Liming Si, Weiren Zhu   +4 more
wiley   +1 more source

Single-layer six-band metasurface absorber for microwave applications. [PDF]

PLoS One
Abutarboush H, Zarin SW, Rashid A, Awais Q, Tahir FA.   +4 more
europepmc   +1 more source

Engineering a Correlated Narrow‐Gap Semiconductor: Effects of Ga Substitution in EuZn2P2

Advanced Electronic Materials, EarlyView.
ABSTRACT The effect of Ga substitution on the electronic, magnetic, and low‐energy responses of the Zintl phase EuZn2P2${\rm EuZn}_2 {\rm P}_2$ is investigated by electrical transport, electron spin resonance (ESR), and terahertz time‐domain spectroscopy (THz‐TDS). Incorporating Ga into EuZn2P2${\rm EuZn}_2 {\rm P}_2$ (EuZn1.8Ga0.2P2${\rm EuZn}_{1.8} {\
Mateus Dutra, Esteban Marulanda, Gustavo G. Vasques, Jaime Ferreira Oliveira, Pedro C. Sabino, Rebeca Brigato Delgado, Leticie Mendonça‐Fereira, Adriano R. V. Benvenho, Elisa Baggio‐Saitovitch, Ricardo K. Machado, Nicolas M. Kawahala, Julian Munevar, Marcos A. Avila, Felix G. G. Hernandez   +13 more
wiley   +1 more source

Broadband Achromatic Programmable Electromagnetic Camouflage via Fluidic-Accessible Metasurface. [PDF]

Adv Sci (Weinh)
Liu S, Zhang J, Wang J, Chen Z, Yu Z, Luo J, Luo J, Cao R, Gong S, Guo Q, Li P, Li R, Chen K, Jia Y, Liu Y.   +14 more
europepmc   +1 more source

Local Order Is Not Enough: Synthetically Accessible Polymers Reveal the Role of Side‐chain Branching Point in Organic Solar Cell and Transistor Performance

Advanced Electronic Materials, EarlyView.
Systematic variation of the side‐chain branching point in a series of donor polymers reveals that moving the branch further from the backbone improves local crystal quality but reduces the overall degree of crystallinity, leading to progressively worse organic solar cell and transistor performance.
Martina Rimmele, Xabier Rodríguez‐Martínez, Zhuoran Qiao, Kaiyang Wei, Adam V. Marsh, Julianna Panidi, Nicola Gasparini, Jaime Martin, Martin Heeney   +8 more
wiley   +1 more source

Design of a Dual-Band Broadband Antenna Based on Structure Reuse. [PDF]

Micromachines (Basel)
Zhang H, Tang J, Yu Z.
europepmc   +1 more source

High‐Responsivity and Fast‐Response Organic Phototransistor Based on Dinaphtho[2,3‐b:2′,3′‐f]Thieno[3,2‐b]Thiophene

Advanced Electronic Materials, EarlyView.
Low‐temperature Al/Al2O3/DNTT/Au organic phototransistors fabricated on flexible PEN combine high responsivity to blue light (≈250 A W−1 at 39 nW cm−2) with detectable modulated photoresponse up to 150 kHz, making them promising for ultra‐low‐light sensing and moderate‐speed optical links.
Antonio Caldarelli, Antonio Vettoliere, Paolo Scotto Di Vettimo, Marcello Campajola, Gino Giusi, Vincenzo Izzo, Alberto Aloisio, Ettore Sarnelli   +7 more
wiley   +1 more source

Fabry-Perot cavity-based circularly polarized Sierpinski fractal antenna with analysis and measurement characterization for sub 5/6G V2I and V2V communication. [PDF]

Sci Rep
Ez-Zaki F, Khan S, Ourahou O, Belahrach H, Ghammaz A, Khan S, Nasir J, Koziel S, Ullah S, Matekovits L.   +9 more
europepmc   +1 more source

High‐Detectivity InGaAs/GaAsP Superlattice PIN Photodetector with a Thin Absorber on GaAs substrate for 1100 nm Applications

Advanced Electronic Materials, EarlyView.
A high‐performance strain‐compensated InGaAs/GaAsP superlattice SWIR photodetector was successfully grown by MOCVD on a scalable 100 mm GaAs platform. Combining excellent structural quality with strong optoelectronic performance, the device delivers a low dark current density of 2.3 × 10−7 A/cm2 and a detectivity of 1.9 × 1011 Jones at 1100 nm ...
Rémy Tribout, Alexis Palais, Driss Mouloua, Mickael Martin, Frédérique Ducroquet, Sébastien Cavalaglio, Badreddine Smiri, Jeremy Da Fonseca, Jeremy Moeyaert, Clara Cornille, Franck Bassani, Charles Leroux, Veronika Letka, Vita Mergner, David Cooper, Evan Oudot, Christophe Duluard, Sophie Barbet, Christophe Jany, Thierry Baron   +19 more
wiley   +1 more source