Results 91 to 100 of about 2,528,020 (312)

Ultra‐High Mobility Atomically‐Ordered InGaZnO Transistors Through Atomic Layer Deposition

Advanced Electronic Materials, EarlyView.
Atomically‐ordered InGaZnO transistors are developed using plasma‐enhanced atomic layer deposition (PEALD), achieving ultra‐high field‐effect mobility of 245 cm2 Vs−1 and excellent switching properties (threshold voltage > 0 V, subthreshold swing < 75 mV dec−1) in a low thermal budget process (below 250 °C).
Yoon‐Seo Kim, Hyeon Woo Kim, Taewon Hwang, Jinho Ahn, Sung Beom Cho, Jin‐Seong Park   +5 more
wiley   +1 more source

Budgets and Expenditures for Dentistry from Maternal and Child Health Funds [PDF]

, 1948
John T. Fulton
openalex   +1 more source

Policies for Increasing Economic Growth and Employment in 2010 and 2011 [PDF]

, 2010
[Excerpt] The number of jobs in the United States has declined almost every month since December 2007. Nearly all professional forecasters believe that the economy has begun to recover from the recent recession, but many also predict that the pace of the
Congressional Budget Office
core   +1 more source

Indium Alloying as a Mobility Booster in IGZO Thin‐Film‐Transistor via Plasma‐Enhanced Atomic Layer Deposition Approach for BEOL Compatible Circuits

Advanced Electronic Materials, EarlyView.
Indium Gallium Zinc Oxide (IGZO) thin‐film transistors (TFTs) are attractive for monolithic 3D integration due to their low‐temperature processability and good electrostatic control. However, mobility remains a limitation. This work explores indium ratio modulation via plasma‐enhanced atomic‐layer deposition (PEALD) and post‐deposition annealing (PDA).
Meishan Zhang, Mei Shen, Wenhui Wang, Jun Lan, Jiqing Lu, Yida Dong, Xiao Huang, Zhixiong Li, Longyang Lin, Yida Li   +9 more
wiley   +1 more source

Budgets of the Scientific Departments of the University of Cambridge [PDF]

, 1953
Lawrence Bragg
openalex   +1 more source

Gate‐Dielectric Surface Engineering With Fluorinated Monolayers: Minimizing Contact Resistance and Nonidealities in OFETs

Advanced Electronic Materials, EarlyView.
Surface engineering of gate dielectrics with fluorinated self–assembled monolayers significantly improves the performance of organic field–effect transistors. In this study, Al2O3 functionalized with fluorinated phosphonic acids reduces contact resistance and hysteresis while achieving near‐zero threshold voltages, offering an alternative to ...
Shaghayegh Mesforush, Alba Cazorla, Hayley Melville, Philippe Blanchard, Hagen Klauk, Ute Zschieschang, Min Zhang, Lamiaa Fijahi, Marta Mas‐Torrent, Esther Barrena   +9 more
wiley   +1 more source

HEAT BUDGET OF A WATER COLUMN, AUTUMN, NORTH ATLANTIC OCEAN [PDF]

, 1955
Glenn H. Jung, Robert A. Gilcrest
openalex   +1 more source

Energy‐Efficient and Scalable Joule Heating Synthesis of Self‐Standing Transition Metal Phosphide Electrodes for Full Water Splitting

Advanced Energy Materials, EarlyView.
A rapid, scalable, reproducible, and energy‐efficient Joule heating synthesis of transition metal phosphides directly on the substrate as free‐standing (pre)electrocatalysts for full water‐splitting in an anion exchange water electrolyzer is demonstrated.
Liel Abisdris, Muhammad Saad Naeem, Marco Bianchini, Isaac Herraiz‐Cardona, Jonathan Tzadikov, Adi Azoulay, Rotem Geva, Michael Volokh, Joshua H. Baraban, Núria López, Menny Shalom   +10 more
wiley   +1 more source

BUDGETS OF SEVERAL ENVIRONMENTS UNDER SEA-BREEZE ADVECTION IN WESTERN OREGON [PDF]

, 1959
William P. Lowry
openalex   +1 more source

Immigration Policy in the United States [PDF]

, 2006
Immigration policy in the United States reflects multiple goals. First, it serves to reunite families by admitting immigrants who already have family members living in the United States.
U.S. Congressional Budget Office
core   +1 more source