Results 141 to 150 of about 3,444 (219)

A Thickness‐Invariant Origami Robot With Integrated Actuation and Multimodal Locomotion

Advanced Science, EarlyView.
A thickness‐invariant variation on the Yoshimura origami pattern is used as the basis of a robot, allowing power, actuation, and control systems to be embedded within the thickened panels of the pattern. The robot uses multiple kinematic branches to achieve distinct modes of locomotion, such as walking, running, galloping, and turning. ABSTRACT Origami
Davis Wing, Sam Bridge, William Bowler, Nathan Usevitch, Larry Howell   +4 more
wiley   +1 more source

Emergent Magnetism, Heavy Electrons, and Pressure‐Induced Reentrant Superconductivity in the Iron Substituted 4d Transition‐Metal Sulfides

Advanced Science, EarlyView.
This work illustrates that magnetic Fe substitution enables systematic modulation of physical properties of the putative unconventional superconductor Rh17S15. Iron doping uncovers delicate competition between weak ferromagnetism, spin‐glass states, heavy‐fermion signatures, and superconductivity.
Yalei Huang, Lu Xin, Na Zuo, Bin Li, Wei Zhou, Dhanarajagopal Alltrin, Boning Yu, Haiyang Yang, Bin Qian, Wen‐Chin Lin, Raman Sankar, Michael Smidman, Xiangzhuo Xing, Chunqiang Xu, Xiaobing Liu, Jianhui Dai, Dong Qian, Shiyan Li, Xiaofeng Xu   +18 more
wiley   +1 more source

Conformal Reconfigurable Intelligent Surfaces: A Cylindrical Geometry Perspective

Advanced Electronic Materials, EarlyView.
Cylindrical reconfigurable intelligent surfaces are explored for low‐complexity beam steering using one‐bit meta‐atoms. A multi‐level modeling approach, including optimization‐based synthesis, demonstrates that even minimal hardware can support directive scattering.
Filippo Pepe, Ivan Iudice, Giuseppe Castaldi, Marco Di Renzo, Vincenzo Galdi   +4 more
wiley   +1 more source

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

Advanced Electronic Materials, EarlyView.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

Advanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song, Chenxi Yu, Shangze Li, Dijiang Sun, Jiajia Zhang, Haotong Zhu, Xiaomin Xiao, Xionghao Qin, Xiaoyan Liu, Xing Zhang, Jinfeng Kang   +10 more
wiley   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer   +12 more
wiley   +1 more source

Millisecond‐Scale Relaxation in Metastable HZO Ferroelectric Capacitors for Bio‐Inspired Temporal Computing

Advanced Electronic Materials, EarlyView.
Through the introduction of a niobium oxide layer into a hafnia ferroelectric capacitor stack, we build a memory device with a strong imprint effect. This imprint leads to a millisecond retention loss that can be tuned by the programming conditions that can be utilized as a scalable, analog hardware time constant for bio‐inspired temporal computing ...
Luca Fehlings, Thomas Mikolajick, Beatriz Noheda, Erika Covi   +3 more
wiley   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Enabling Quantum‐Compatible Nonvolatile Memory: Cryogenic Evaluation of 1T1R HfO2‐Based RRAM From 300 to 1.5 K

Advanced Electronic Materials, EarlyView.
Resistive memory devices are explored for operation at extremely low temperatures relevant to quantum computing. The study reveals how transistor behavior strongly influences memory performance under cryogenic conditions and introduces an optimized programming strategy.
Emilio Pérez‐Bosch Quesada, Alberto Mistroni, Ruolan Jia, Keerthi Dorai Swamy Reddy, Markus Fritscher, Felix Reichmann, Oliver Skibitzki, Juan Bautista Roldán, Helena Castán, Salvador Dueñas, Christian Wenger, Eduardo Pérez   +11 more
wiley   +1 more source

Multi‐Vth IGZO FETs Enabled by Continuous‐wave Laser Scanning Annealing for Low Thermal Budget 3D Integration

Advanced Electronic Materials, EarlyView.
A novel strategy is used to fabricate multi‐threshold‐voltage (multi‐Vth) IGZO FETs via continuous‐wave laser scanning annealing (CW‐LSA). By tuning the laser power and scan speed, low, standard, and high Vth values of 0.22, 0.42, and 0.62 V, respectively, were achieved on a single wafer with excellent uniformity (coefficient of variation: 2.17%–6.61%).
Jun‐Hyeok Choi, Kiyung Kim, Hyeon‐Seok Shin, Uigwan Shin, Byeong Gwan Kim, Jae Hyeon Jun, Joon Kim, Yoonyoung Chung, Byoung Hun Lee   +8 more
wiley   +1 more source