Results 41 to 50 of about 2,235 (169)

Ferroelectric Hafnium Oxide: A Potential Game‐Changer for Nanoelectronic Devices and Systems

Advanced Electronic Materials, EarlyView.
Devices based on ferroelectric hafnium oxide have spurred interest in a wide range of nanoelectronic applications. This review focuses on the advantages and challenges of these devices, including non‐volatile memories, neuromorphic devices, sensors, actuators, and RF devices.
David Lehninger, Franz Müller, Yannick Raffel, Shouzhuo Yang, Markus Neuber, Sukhrob Abdulazhanov, Thomas Kämpfe, Konrad Seidel, Maximilian Lederer   +8 more
wiley   +1 more source

Solution Shearing of Sustainable Aluminum Oxide Thin Films for Compliance‐Free, Voltage‐Regulated Multi‐Bit Memristors

Advanced Electronic Materials, EarlyView.
Solution shearing technique is reported to fabricate sustainable 15 nm AlOx thin films using de‐ionized water. Thermal annealing and deep UV exposure application assist the film formation. These films exhibit two‐order bipolar resistive switching, 100 cycles endurance, and >40 h retention. The compliance‐free memristor shows eight switching states with
Preetam Dacha, Anju Kumari R, Darius Pohl, Angelika Wrzesińska‐Lashkova, Alexander Tahn, Bernd Rellinghaus, Yana Vaynzof, Stefan C. B. Mannsfeld   +7 more
wiley   +1 more source

Ferroelectric Compensation Effect of the Hard Electrode for the HfO2‐ZrO2 Superlattice Films at the Low‐Annealing Temperature

Advanced Electronic Materials, EarlyView.
The hafnia superlattice structure ferroelectric capacitors are clamped by electrodes with various hardness and annealed at 450 to 600 °C. It is found that the out‐of‐plane compressive stress caused by electrode hardness can offset the in‐plane tensile stress loss in hafnium‐based superlattice ferroelectric devices when the annealing temperature ...
Chuqian Zhu, Na Bai, Yufan Wang, Huajun Sun, Lanqing Zou, Yunhui Yi, Jiyang Xu, Jiawang Ren, Junming Zhang, Sheng Hu, Kanhao Xue, Lei Ye, Weiming Cheng, Qiang He, Xiangshui Miao   +14 more
wiley   +1 more source

A Physics‐Based Compact Model for Ferroelectric Capacitors Operating Down to Deep Cryogenic Temperatures for Applications in Analog Memory and Neuromorphic Architectures

Advanced Electronic Materials, EarlyView.
A compact model for ferroelectric thin‐film capacitors operating under different electric fields and temperatures is reported. The model can reproduce polarization switching down to 4 K, making them suitable for quantum computing and space technologies.
Ella Paasio, Rikhard Ranta, Sayani Majumdar   +2 more
wiley   +1 more source

Ge N‐Channel Ferroelectric FET Memory With Al2O3/AlN Interfacial Layer by Microwave Annealing

Advanced Electronic Materials, EarlyView.
The first Ge n‐channel FeFET memory devices have been demonstrated. By employing an Al2O3/AlN interfacial layer combined with low thermal budget microwaving annealing, a desirable memory window as well as triple‐level cell storage capability with good reliability have been achieved.
Sheng‐Yen Zheng, Wei‐Ning Kao, Yu‐Hsing Chen, Yung‐Hsien Wu   +3 more
wiley   +1 more source

Reappraisal of telesurgery in the era of high‐speed, high‐bandwidth, secure communications: Evaluation of surgical performance in local and remote environments

Annals of Gastroenterological Surgery, Volume 7, Issue 1, Page 167-174, January 2023., 2023
This study aims to examine the feasibility of telerobotic surgery by validating the communication environment and local/remote robot operation. The performance of remote surgery over a commercial line was equivalent to that of the local environment. Therefore, remote surgery using a commercial line can be performed safely, indicating that we have the ...
Yoshiya Takahashi, Kenichi Hakamada, Hajime Morohashi, Harue Akasaka, Yuma Ebihara, Eiji Oki, Satoshi Hirano, Masaki Mori   +7 more
wiley   +1 more source

Extension Doping with Low‐Resistance Contacts for P‐Type Monolayer WSe2 Field‐Effect Transistors

Advanced Electronic Materials, EarlyView.
This study demonstrates both low‐resistance contacts and extension doping for p‐type monolayer WSe2 field‐effect transistors. The insertion of an amorphous monolayer WOxSey under evaporated metal contacts reduces the contact resistance by over an order of magnitude, achieving a low value of 1.2 ± 0.3 kΩ µm for monolayer WSe2.
Sihan Chen, Yue Zhang, William P. King, Rashid Bashir, Arend M. van der Zande   +4 more
wiley   +1 more source

Multimodal Locomotion: Next Generation Aerial–Terrestrial Mobile Robotics

Advanced Intelligent Systems, EarlyView., 2023
Aerial–terrestrial robots can achieve efficient energy consumption and robust environmental interaction by adding morphological features, adapting forms for locomotion transitions, and integrating multiple platforms. This next generation of mobile robots advances real‐world robotic deployment for operations with complex tasks and tackle environments ...
Jane Pauline Ramirez, Salua Hamaza
wiley   +1 more source

Oxygen Doping in Ferroelectric Wurtzite‐type Al0.73Sc0.27N: Improved Leakage and Polarity Control

Advanced Electronic Materials, EarlyView.
Left: Polarization hysteresis (P‐E) characteristics of 200 nm wurtzite‐type Al0.73Sc0.27N without (ref. Nmix = 0) and with O‐doping (Nmix = 8 and 15), showing a clear drop of leakage current with O‐doping. Right: Piezoresponse for microscopy showing the as‐deposited polarization reversal from nitrogen (Nmix = 0) to metal polarity (Nmix = 15) via mixed ...
Md Redwanul Islam, Niklas Wolff, Georg Schönweger, Tom‐Niklas Kreutzer, Margaret Brown, Maike Gremmel, Eric S. Ollanescu‐Orendi, Patrik Straňák, Lutz Kirste, Geoff L. Brennecka, Simon Fichtner, Lorenz Kienle   +11 more
wiley   +1 more source

Demonstration of Vertically Stacked ZnO/Te Complementary Field‐Effect Transistor

Advanced Electronic Materials, EarlyView.
This study presents the first experimental demonstration of a vertically stacked complementary field‐effect transistor (CFET) using zinc oxide (ZnO) and tellurium (Te), providing a significant advancement in CFET technology. Furthermore, functional logic gates with a minimal footprint are demonstrated, confirming that vertical integration of CFETs is ...
Kiyung Kim, Minjae Kim, Yongsu Lee, Hae‐Won Lee, Jae Hyeon Jun, Jun‐Hyeok Choi, Seongbeen Yoon, Hyeon‐Jun Hwang, Byoung Hun Lee   +8 more
wiley   +1 more source